PNP Silicon AF Transistors BC 327 BC 328 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 337, BC 338 (NPN) ● 2 3 Type Marking Ordering Code BC 327 BC 327-16 BC 327-25 BC 327-40 BC 328 BC 328-16 BC 328-25 BC 328-40 – Q62702-C311 Q62702-C311-V3 Q62702-C311-V4 Q62702-C311-V2 Q62702-C312 Q62702-C312-V3 Q62702-C312-V4 Q62702-C312-V2 1) 1 Pin Configuration 1 2 3 C B E Package1) TO-92 For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BC 327 BC 328 Maximum Ratings Parameter Symbol Values BC 327 BC 328 Unit V Collector-emitter voltage VCE0 45 25 Collector-base voltage VCB0 50 30 Emitter-base voltage VEB0 Collector current IC 800 Peak collector current ICM 1 Base current IB 100 Peak base current IBM 200 Total power dissipation, TC = 66 ˚C Ptot 625 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg 5 mA A mA – 65 … + 150 Thermal Resistance Junction - ambient Rth JA ≤ 200 Junction - case1) Rth JC ≤ 135 1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 2 K/W BC 327 BC 328 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 327 BC 328 V(BR)CE0 Collector-base breakdown voltage IC = 100 µA V(BR)CB0 BC 327 BC 328 Emitter-base breakdown voltage IE = 10 µA V(BR)EB0 Collector cutoff current VCB = 25 V VCB = 45 V VCB = 25 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C ICB0 BC 328 BC 327 BC 328 BC 327 Emitter cutoff current VEB = 4 V IEB0 DC current gain1) IC = 100 mA; VCE = 1 V hFE V 45 25 – – – – 50 30 – – – – 5 – – – – – – – – – – 100 100 10 10 nA nA µA µA – – 100 nA – BC 327/16; BC 328/16 BC 327/25; BC 328/25 BC 327/40; BC 328/40 100 160 250 160 250 350 250 400 630 BC 327/16; BC 328/16 BC 327/25; BC 328/25 BC 327/40; BC 328/40 60 100 170 – – – – – – IC = 300 mA; VCE = 1 V Collector-emitter saturation voltage1) IC = 500 mA; IB = 50 mA VCEsat – – 0.7 Base-emitter saturation voltage1) IC = 500 mA; IB = 50 mA VBEsat – – 2 1) Pulse test: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 3 V BC 327 BC 328 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz fT – 200 – MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo – 12 – pF Input capacitance VEB = 0.5 V, f = 1 MHz Cibo – 60 – Semiconductor Group 4 BC 327 BC 328 Total power dissipation Ptot = f (TA; TC) Permissible pulse load RthJA = f (tp) Collector current IC = f (VBE) VCE = 1 V Collector cutoff current ICB0 = f (TA) VCB = 45 V Semiconductor Group 5 BC 327 BC 328 DC current gain hFE = f (IC) VCE = 1 V Transition frequency fT = f (IC) f = 20 MHz, TA = 25 ˚C Collector-emitter saturation voltage VCEsat = f (IC) hFE = 10 Base-emitter saturation voltage VBEsat = f (IC) hFE = 10 Semiconductor Group 6