Z ibo Seno Electronic Engineering Co., Ltd. FR101G – FR107G 1.0A GLASS PASSIVATED FAST RECOVERY DIODE Features ! ! ! ! ! Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.34 grams (approx.) Mounting Position: Any Marking: Type Number Lead Free: For RoHS / Lead Free Version D DO-41 Max Dim Min 24.5 — A 4.06 5.21 B 0.60 0.80 C 2.00 3.00 D All Dimensions in mm Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 75°C FR101G FR102G FR103G FR104G FR105G FR106G FR107G Unit VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 700 V IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A @IF = 1.0A VFM 1.3 V @TA = 25°C @TA = 100°C IRM 5.0 100 µA Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage Reverse Recovery Time (Note 2) trr Typical Junction Capacitance (Note 3) Cj 15 pF Operating Temperature Range Tj -65 to +150 °C TSTG -65 to +150 °C Storage Temperature Range 150 250 500 nS Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5. 3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. FR101G – FR107G 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. FR101G – FR107G 1.0 10 IF, INSTANTANEOUS FWD CURRENT (A) I(AV), AVERAGE FWD RECTIFIED CURRENT (A) 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0 1.0 0.1 Tj = 25°C Pulse width = 300 µs 0.01 25 50 75 100 125 150 175 200 1.0 1.2 1.4 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 30 100 Tj = 25°C f = 1MHz Pulse Width 8.3ms Single Half-Sine-Wave (JEDEC Method) Cj, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) TA, AMBIENT TEMPERATURE (°C) Fig. 1 Forward Derating Curve 20 10 10 1 0 1 10 NUMBER OF CYCLES AT 60 Hz Fig. 3 Peak Forward Surge Current 100 1 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100 trr +0.5A 50Ω NI (Non-inductive) 10Ω NI Device Under Test (-) 0A (+) Pulse Generator (Note 2) 50V DC Approx (-) 1.0Ω NI Oscilloscope (Note 1) -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit FR101G – FR107G 2 of 2 www.senocn.com Alldatasheet