Preliminary Datasheet HITK0303MP Silicon N Channel MOS FET Power Switching R07DS0484EJ0100 Rev.1.00 Jun 22, 2011 Features Low on-resistance RDS(on) = 42 m typ (VGS = 10 V, ID = 1.8 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2. Gate 3. Drain 2 1 2 S 1 Note: Marking is “MG”. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS Ratings 30 20 Unit V V ID ID(Pulse) Note1 IDR Pch Note2 Tch Tstg 3.7 5 3.7 0.8 150 –55 to +150 A A A W C C Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 40 1 mm) R07DS0484EJ0100 Rev.1.00 Jun 22, 2011 Page 1 of 6 HITK0303MP Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Drain to source leak current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) Min 30 20 — — 1.0 Typ — — — — — Max — — 10 1 2.0 Unit V V A A V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA Drain to source on state resistance RDS(on) — 42 53 m ID = 1.8 A, VGS = 10 VNote3 RDS(on) — 50 70 m ID = 1.8 A, VGS = 4.5 VNote3 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg 3.9 — — — — — — — — 6.5 550 87 42 13 39 46 114 8.9 — — — — — — — — — S pF pF pF ns ns ns ns nC ID = 1.8 A, VDS = 10 VNote3 Gate to source charge Gate to drain charge Body - drain diode forward voltage Qgs Qgd VDF — — — 1.0 1.3 0.8 — — — nC nC V VDS = 10 V, VGS = 0, f = 1 MHz ID = 1 A, VGS = 10 V, RL = 10 , Rg = 4.7 VDD = 10 V, VGS = 10 V, ID = 3.7A IF = 1.5 A, VGS = 0 Note3 Notes: 3. Pulse test R07DS0484EJ0100 Rev.1.00 Jun 22, 2011 Page 2 of 6 HITK0303MP Preliminary Main Characteristics Maximum Channel Power Dissipation Curve Maximum Safe Operation Area 100 0.8 1 m D s C O s pe ra tio n 0.1 0.2 0 Tc = 25°C 0 25 50 75 100 125 0.01 0.01 150 2.8 V 3.0 V 10 V 4 2.5 V 2 Pulse Test Tc = 25°C 2.4 V 1 2.3 V 2 4 6 8 4 25°C 3 2 Tc = 75°C 1 –25°C VGS = 0 V 0 0 100 VDS = 10 V Pulse Test 2.6 V 3 10 5 2.7 V Drain Current ID (A) 2.9 V 1 Typical Transfer Characteristics (1) Typical Output Characteristics 5 0.1 Drain to Source Voltage VDS (V) Ambient Temperature Ta (°C) *When using the glass epoxy board (FR-4: 40 × 40 × 1 mm) Drain Current ID (A) 1 m 0.4 100 μs 10 10 0.6 Operation in this area is limited by RDS(on) = Drain Current ID (A) 1.0 PW Channel Dissipation Pch (W) 1.2 0 0.5 10 Drain to Source Voltage VDS (V) 1 1.5 2 2.5 3 Gate to Source Voltage VGS (V) Drain Current ID (A) 1.0 VDS = 10 V Pulse Test Tc = 75°C 0.1 25°C 0.01 –25°C 0.001 0.0001 0 0.5 1 1.5 2 2.5 Gate to Source Voltage VGS (V) R07DS0484EJ0100 Rev.1.00 Jun 22, 2011 3 Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Typical Transfer Characteristics (2) Case Temperature 2.5 2 ID = 10 mA 1.5 1 mA 0.1 mA 1 VDS = 10 V Pulse Test 0.5 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 3 of 6 Preliminary 0.4 Pulse Test Tc = 25°C 0.3 0.2 1.5 A 1.0 A 0.1 0 0 2 4 0.5 A 0.2 A 0.1 A 6 8 10 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage 1.0 Pulse Test Tc = 25°C 0.3 0.1 VGS = 4.5 V 10 V 0.03 0.01 0.1 0.3 1 3 10 Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature Static Drain to Source on State Resistance vs. Case Temperature Drain to Source on State Resistance RDS(on) (mΩ) Gate to Source Voltage VGS (V) 100 90 Pulse Test VGS = 4.5 V 80 ID = 1.5 A 1A 70 0.5 A 60 0.2 A 50 40 30 –25 0 25 50 75 100 125 150 80 70 1A ID = 1.5 A 60 0.5 A 50 0.2 A 40 30 –25 0 25 50 75 100 125 150 Forward Transfer Admittance vs. Drain Current Zero Gate Voltage Drain current vs. Case Temperature Pulse Test VDS = 10 V –25°C 25°C 1 Pulse Test VGS = 10 V Case Temperature Tc (°C) 100 10 90 Case Temperature Tc (°C) Tc = 75°C 0.1 0.1 1 Drain Current ID (A) R07DS0484EJ0100 Rev.1.00 Jun 22, 2011 10 Zero Gate Voltage Drain current IDSS (nA) Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (V) HITK0303MP 10000 1000 Pulse Test VGS = 0 V VDS = 30 V 100 10 1 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 4 of 6 HITK0303MP Preliminary Switching Characteristics ID = 3.7 A Tc = 25°C 80 16 VDD =10 V 60 12 25 V 40 8 VGS VDS 20 0 4 VDD = 25 V 10 V 0 2 4 6 8 0 10 1000 Switching Time t (ns) 20 100 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics td(off) td(on) 10 tr VDD = 10 V VGS = 10 V Rg = 4.7 Ω PW = 5 μs Tc = 25°C 0.1 10 1 Gate Charge Qg (nC) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Input Capacitance vs. Gate to Source Voltage 800 Ciss 750 100 Ciss (pF) Ciss, Coss, Crss (pF) 100 1 0.01 1000 Coss VDS = 0 V f = 1 MHz 10 0 5 10 15 20 25 600 –10 30 –5 0 5 10 Gate to Source Voltage VGS (V) Reverse Drain Current vs. Source to Drain Voltage Body-Drain Diode Forward Voltage vs. Case Temperature Pulse Test Tc = 25°C 4 VGS = 10 V 3 5V 0 V, –5 V, –10 V 2 1 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS0484EJ0100 Rev.1.00 Jun 22, 2011 Body-Drain Diode Forward Voltage VSDF (V) Drain to Source Voltage VDS (V) 5 0 700 650 Crss VGS = 0 V f = 1 MHz Reverse Drain Current IDR (A) tf 0.9 VGS = 0 0.8 ID = 10 mA 0.7 0.6 0.5 1 mA 0.4 0.3 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 5 of 6 HITK0303MP Preliminary Package Dimensions JEITA Package Code SC-59A Package Name MPAK RENESAS Code PLSP0003ZB-A D Previous Code MPAK(T) / MPAK(T)V A Q e E c HE L A MASS[Typ.] 0.011g LP L1 A3 A x M S A b Reference Dimension in Millimeters Symbol Min Nom Max e A2 A e1 A1 S b I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b c D E e HE L L1 LP x b2 e1 I1 Q 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 1.1 0.25 0.4 0.16 1.5 0.95 2.8 1.3 0.1 1.2 0.5 0.26 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information Orderable Part Number Quantity HITK0303MPTL-HQ 3000 pcs. Note: Shipping Container 178 mm reel, 8 mm Emboss taping This product is designed for consumer use and not for automotive. R07DS0484EJ0100 Rev.1.00 Jun 22, 2011 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. 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