ON NDP06N60Z Ndp06n60z Datasheet

NDF06N60Z, NDP06N60Z
N-Channel Power MOSFET
0.98 W, 600 Volts
Features
•
•
•
•
Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
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Applications
• Adapter (Notebook, Printer, Gaming)
• LCD Panel Power
• Lighting Ballasts
VDSS
RDS(ON) (TYP) @ 3 A
600 V
0.98 Ω
N−Channel
D (2)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Drain−to−Source Voltage
VDSS
600 (Note 1)
V
Continuous Drain Current
ID
6.0 (Note 2)
A
Continuous Drain Current
TA = 100°C
ID
3.8 (Note 2)
A
Pulsed Drain Current,
VGS @ 10 V
IDM
20 (Note 2)
A
Power Dissipation (Note 1)
PD
Gate−to−Source Voltage
VGS
±30
V
Single Pulse Avalanche
Energy, L = 6.3 mH,
ID = 6.0 A
EAS
113
mJ
ESD (HBM)
(JESD 22−114−B)
Vesd
3000
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 13)
VISO
Peak Diode Recovery
dv/dt
4.5 (Note 3)
V/ns
Continuous Source
Current (Body Diode)
IS
6.0
A
Maximum Temperature for
Soldering Leads, 0.063″
(1.6 mm) from Case for
10 s Package Body for 10 s
TL
TPKG
300
260
°C
TJ, Tstg
−55 to 150
°C
Operating Junction and
Storage Temperature Range
NDF06N60Z
NDP06N60Z
31
113
4500
Unit
W
−
S (3)
TO−220FP
CASE 221D
STYLE 1
MARKING
DIAGRAM
NDF06N60ZG
or
NDP06N60ZG
AYWW
V
Gate
Source
TO−220AB
CASE 221A
STYLE 5
Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1″ sq. pad size, 1 oz cu
2. Limited by maximum junction temperature
3. ISD = 6.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
© Semiconductor Components Industries, LLC, 2009
June, 2009 − Rev. 0
G (1)
1
A
Y
WW
G
= Location Code
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NDF06N60ZG
TO−220FP
50 Units/Rail
NDP06N60ZG
TO−220AB
In Development
Publication Order Number:
NDF06N60Z/D
NDF06N60Z, NDP06N60Z
THERMAL RESISTANCE
Symbol
NDF06N60Z
NDP06N60Z
Unit
Junction−to−Case (Drain)
Parameter
RqJC
4.0
1.1
°C/W
Junction−to−Ambient Steady State (Note 4)
RqJA
50
50
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
VGS = 0 V, ID = 1 mA
BVDSS
600
Reference to 25°C,
ID = 1 mA
DBVDSS/
DTJ
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain−to−Source Leakage Current
25°C
VDS = 600 V, VGS = 0 V
Gate−to−Source Forward Leakage
V
0.6
IDSS
V/°C
1
150°C
mA
50
VGS = ±20 V
IGSS
Static Drain−to−Source
On−Resistance
VGS = 10 V, ID = 3.0 A
RDS(on)
Gate Threshold Voltage
VDS = VGS, ID = 250 mA
VGS(th)
VDS = 15 V, ID = 3.0 A
gFS
5.0
S
Ciss
923
pF
Coss
106
Crss
23
Qg
31
±10
mA
1.2
W
4.5
V
ON CHARACTERISTICS (Note 5)
Forward Transconductance
0.98
3.0
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDD = 300 V, ID = 6.0 A,
VGS = 10 V
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Gate Resistance
nC
Qgs
6.3
Qgd
17
Rg
3.2
W
td(on)
13
ns
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = 300 V, ID = 6.0 A,
VGS = 10 V, RG = 5 Ω
Fall Time
tr
17
td(off)
30
tf
28
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 6.0 A, VGS = 0 V
VSD
Reverse Recovery Time
VGS = 0 V, VDD = 30 V
IS = 6.0 A, di/dt = 100 A/ms
trr
338
ns
Qrr
2.0
mC
Reverse Recovery Charge
4. Insertion mounted
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
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2
1.6
V
NDF06N60Z, NDP06N60Z
TYPICAL CHARACTERISTICS
12
6.8 V
VDS ≥ 30 V
6.6 V
15 V
8
6.4 V
6
6.2 V
6.0 V
4
5.8 V
2
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
10 V
10
7V
5.6 V
0
5
10
15
20
8
6
25
TJ = 150°C
4
2
TJ = −55°C
3
6
5
7
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1.5
1
0.5
5
6
7
8
9
10
VGS (V)
8
1.75
TJ = 25°C
1.5
1.25
VGS = 10 V
1
0.75
0.5
0
2
4
6
8
10
12
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.6
10,000
VGS = 0 V
ID = 3 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID = 3 A
TJ = 25°C
2.2
TJ = 25°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
2
0
10
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
TJ = 25°C
ID, DRAIN CURRENT (A)
12
1.8
1.4
1.0
TJ = 150°C
1000
100
0.6
TJ = 100°C
0.2
−50
−25
0
25
50
75
100
125
150
10
0
100
200
300
400
500
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
600
NDF06N60Z, NDP06N60Z
TYPICAL CHARACTERISTICS
400
QT
15
1500
Ciss
1000
Crss
0
VDS
50
100
150
200
200
Qgs
VGS
0
100
TJ = 25°C
ID = 6 A
0
5
10
15
20
25
30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
0
35
IS, SOURCE CURRENT (A)
6
VDD = 300 V
ID = 6 A
VGS = 10 V
td(off)
100
tr
tf
td(on)
10
1
10
5
VGS = 0 V
TJ = 25°C
4
3
2
1
0
0.4
100
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
ID, DRAIN CURRENT (A)
t, TIME (ns)
Qgd
5
1000
1
300
10
Coss
500
0
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
VGS = 0 V
TJ = 25°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
20
2000
10 ms 1 ms
10
100 ms
10 ms
dc
1
VGS = 10 V
Single Pulse
TC = 25°C
0.1
0.01
RDS(on) Limit
Thermal Limit
Package Limit
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area for NDF06N60Z
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4
1000
NDF06N60Z, NDP06N60Z
TYPICAL CHARACTERISTICS
10
R(t) (C/W)
1.0
0.1
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
PULSE TIME (s)
Figure 12. Thermal Impedance for NDF06N60Z
LEADS
HEATSINK
0.110″ MIN
Figure 13. Mounting Position for Isolation Test
Measurement made between leads and heatsink with all leads shorted together.
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5
100
1000
NDF06N60Z, NDP06N60Z
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE J
−T−
−B−
F
SEATING
PLANE
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
S
Q
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
TO−220AB
CASE 221A−09
ISSUE AE
−T−
B
F
T
SEATING
PLANE
C
S
A
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
4
Q
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
Y
M
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
U
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
N
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
GATE
DRAIN
SOURCE
DRAIN
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NDF06N60Z/D