HANBit HMF51232M4D FLASH-ROM MODULE 2MByte (512K x 32-Bit) Part No. HMF51232M4D GENERAL DESCRIPTION The HMF51232M4D is a high-speed flash read only memory (FROM) module containing 524,288 words organized in a x32bit configuration. The module consists of four 512Kx 8 FROM mounted on a 72-pin, single-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Four chip enable inputs, (/CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to enable the module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition, the module is becoming power standby mode, system designer can get low-power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL-compatible. PIN ASSIGNMENT FEATURES PIN SYMBOL PIN 1 Vss 2 A3 3 A2 4 A1 5 A0 6 Vcc 7 8 w Minimum 1,000,000 write/erase cycle w Sector erases architecture w Sector group protection w Temporary sector group unprotection w Part Identification w Access time : 55,70, 90 and 120ns w High-density 2MByte design w High-reliability, low-power design w Single + 5V ± 0.5V power supply w Easy memory expansion wAll inputs and outputs are TTL- compatible w FR4-PCB design w Low profile 72-pin SIMM HMF51232M4D : Gold Plate Lead OPTIONS MARKING w Timing 55ns access - 55 70ns access - 70 90ns access - 90 120ns access - 120 SYMBOL PIN SYMBOL 25 Vcc 49 DQ17 26 DQ8 50 DQ18 27 DQ9 51 DQ22 28 DQ10 52 DQ21 29 NC 53 DQ20 30 Vcc 54 DQ19 A11 31 /CE_LM2 55 Vcc /OE 32 DQ15 56 A15 9 A10 33 DQ14 57 A12 10 Vcc 34 DQ13 58 A7 11 NC 35 DQ12 59 Vcc 12 /CE_LL2 36 DQ11 60 A8 13 DQ7 37 A18 61 A9 14 DQ0 38 A16 62 DQ24 15 DQ1 39 Vss 63 DQ25 16 DQ2 40 A6 64 DQ26 17 DQ6 41 Vcc 65 NC 18 DQ5 42 A5 66 /CE_UU2 19 DQ4 43 A4 67 DQ31 20 DQ3 44 Vcc 68 DQ30 21 /WE 45 NC 69 DQ29 22 A17 46 /CE_UM2 70 DQ28 23 A14 47 DQ23 71 DQ27 24 A13 48 DQ16 72 Vss w Package 72-pin SIMM 72-PIN SIMM TOP VIEW M FUNCTIONAL BLOCK DIAGRAM URL: www.hbe.co.kr REV.02(August,2002) 1 HANBit Electronics co., Ltd. HANBit HMF51232M4D DQ0 - DQ31 A0 - A18 32 19 A0-18 /WE DQ 0-7 U1 /OE /CE /CE_LL2 A0-18 /WE DQ 8-15 U2 /OE /CE /CE_LM2 A0-18 /WE DQ16-23 U3 /OE /CE /CE_UM2 A0-18 /WE /WE /OE /OE DQ24-31 U4 /CE /CE_UU2 TRUTH TABLE MODE /OE /CE /WE DQ POWER STANDBY X H X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H Dout ACTIVE WRITE X L L Din ACTIVE Note : X means don't care URL: www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics co., Ltd. HANBit HMF51232M4D ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -2.0V to +7.0V Voltage with respect to ground Vcc VCC -2.0V to +7.0V Power Dissipation Po 4W TSTG -65oC to +125oC Voltage with respect to ground all other pins Storage Temperature Operating Temperature TA -55oC to +125oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS SYMBOL MIN Vcc for ±5% device Supply Voltages VCC 4.75V 5.25V Vcc for ± 10% device Supply Voltages Vcc 4.5V 5.5V Ground VSS 0 PARAMETER TYP. MAX 0 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER TEST CONDITIONS SYMBOL MI N TYP MAX UNITS Input Load Current Vin=Vss to, VCC, Vcc= Vcc Max IL1 ±1.0 µA A9 Input Lodad Current Vcc= Vcc Max, A9= 12.5V IL1T 50 µA Output Leakage Current VOUT= VSS to VCC, VCC= VCC Max IL0 ±1.0 µA Vcc Active Read Current(Note1,2) /CE = VIL, /OE=VIH, ICC1 80 120 mA /CE = VIL, /OE=VIH ICC2 120 160 mA /CE= VIH ICC3 4 20 mA Vcc Active Write(Program/Erase) Current(Note 2,3,4) Vcc Standby Current(Note2) Input Low Level VIL -0.5 0.8 V Input High Level VIH 2.0 Vcc+0. V 5 Voltage for Autoselect Vcc= 5.25V VID And Sector Protect 10. 12.5 V 0.45 V 5 Output Low Voltage IOL = 12mA, Vcc =Vcc Min VOL Output High Voltage IOH = -2.5mA, Vcc = Vcc Min VOH 2.4 VLKO 3.2 Low Vcc Lock-Out Voltage V 4.2 V Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH. 2. Icc active while embedded algorithm (program or erase) is in progress URL: www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics co., Ltd. HANBit HMF51232M4D 3. Maximum Icc current specifications are tested with Vcc=Vcc max ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER MIN. Sector Erase Time - Chip Erase Time TYP. UNIT COMMENTS MAX. 1 8 sec Excludes 00H programming 8 64 sec prior to erasure Excludes system-level Byte Programming Time - 7 300 us Chip Programming Time - 3.6 10.8 sec overhead Notes: 1. Typical program and erase times assume the follwing conditions:25°,5.0Vcc,1,000,000cycles. Additionally,programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, Vcc=4.5V(4.75V for-55), 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then does the device set DQ5= 1. See the section os DQ5for further information. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 4 for further in formation on command definitions. 6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000cycles. CAPACITANCE PARAMETER PARAMETER SYMBOL CIN TEST SETUP TYP. MAX UNIT VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 7.5 9 pF DESCRIPTION Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance o Notes : Test conditions TA = 25 C, f=1.0 MHz. TEST CONDITIONS TEST CONDITION -55 Output load ALL OTHERS UNIT 1 TTL gate Output load Capacitance, CL 30 100 pF Input Rise and Fall Times 5 20 ns 0~3 0.45~2.4 V Input Pulse Levels URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics co., Ltd. HANBit HMF51232M4D Input timing measurement reference levels 1.5 0.8 V Output timing measurement reference levels 1.5 2.0 V AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETE -55 -70 -90 -120 UNIT TEST DESCRIPTION R MIN SETUP MAX MIN MAX MIN MAX MIN MAX SYMBOLS tRC Read Cycle Time 55 tACC /CE = VIL 70 55 90 120 ns 70 Address to Output Delay 90 120 ns /OE = VIL tCE Chip Enable to Output Delay tOE Chip Enable to Output Delay tDF Chip Enable to Output High-Z tDF Output Enable to Output High-Z /OE = VIL 55 70 90 120 ns 30 30 35 50 ns 0 0 18 Output Hold Time From 0 20 0 20 ns 35 ns 0 ns 0 Addresses, tQH 0 0 /CE or /OE, Whichever Occurs First 5.0V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics co., Ltd. HANBit HMF51232M4D u Erase/Program Operations PARAMETE -55 DESCRIPTION R MIN -70 TYP MIN -90 MAX MIN -120 MAX MIN MAX UNIT SYMBOLS tWC Write Cycle Time tAS Address Setup Time tAH Address Hold Time 40 45 45 50 ns tDS Data Setup Time 25 30 45 50 ns tDH Data Hold Time 0 ns tOES Output Enable Setup Time 0 ns Read Recover Time Before Write 0 ns tCS /CE Setup Time 0 ns tCH /CE Hold Time 0 ns tWP Write Pulse Width tWPH Write Pulse Width High 20 ns tWHWH1 Byte Programming Operation 7 µs tWHWH2 Sector Erase Operation (Note1) 1 sec Vcc set up time 50 µs tGHWL tVCS 55 70 90 120 ns 0 30 35 ns 45 50 ns Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations u Erase/Program Operations Alternate /CE Controlled Writes PARAMETE -55 DESCRIPTION R -70 MIN TYP MIN 55 ns 70 -90 MAX MIN -120 MAX MIN MAX UNIT SYMBOLS tWC Write Cycle Time tAS Address Setup Time tAH Address Hold Time 40 ns 45 45 50 ns tDS Data Setup Time 25 ns 30 45 50 ns tDH Data Hold Time 0 ns Read Recover Time Before Write 0 ns tWS /WE Setup Time 0 ns tWH /WE Hold Time 0 ns tGHEL URL: www.hbe.co.kr REV.02(August,2002) 90 120 0 6 ns ns HANBit Electronics co., Ltd. HANBit HMF51232M4D tCP /CE Pulse Width 30 ns 35 45 50 ns tCPH /CE Pulse Width High 20 ns tWHWH1 Byte Programming Operation 7 µs tWHWH2 Sector Erase Operation (Note) 1 sec Notes : This does not include the preprogramming time. URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics co., Ltd. HANBit HMF51232M4D u READ OPERATIONS TIMING u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics co., Ltd. HANBit HMF51232M4D u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics co., Ltd. HANBit HMF51232M4D u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics co., Ltd. HANBit HMF51232M4D u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 11 HANBit Electronics co., Ltd. HANBit HMF51232M4D PACKAGE DIMENSIONS 2.54 mm MIN 0.25 mm MAX 1.27±0.08mm Gold: 1.04±0.10 mm Solder: 0.914±0.10 mm 1.27 (Solder & Gold Plating) ODERING INFORMATION Part Number Density Org. Package HMF51232M4D-55 2MByte 512K×32bit 72 Pin-SIMM HMF51232M4D-70 2MByte 512K×32bit HMF51232M4D-90 2MByte HMF51232M4D-120 2MByte URL: www.hbe.co.kr REV.02(August,2002) Component Vcc SPEED 4EA 5.0V 55ns 72 Pin-SIMM 4EA 5.0V 70ns 512K×32bit 72 Pin-SIMM 4EA 5.0V 90ns 512K×32bit 72 Pin-SIMM 4EA 5.0V 120ns 12 Number HANBit Electronics co., Ltd.