Diodes MBR1060CT 10a schottky barrier rectifier Datasheet

SPICE MODELS: MBR1030CT MBR1040CT MBR1045CT MBR1050CT MBR1060CT
MBR1030CT - MBR1060CT
10A SCHOTTKY BARRIER RECTIFIER
Features
·
·
Schottky Barrier Chip
·
·
·
·
Low Power Loss, High Efficiency
·
Guard Ring Die Construction for
Transient Protection
TO-220AB
L
High Surge Capability
B
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
C
D
K
Lead Free Finish, RoHS Compliant (Note 3)
A
Mechanical Data
·
·
·
·
·
·
·
M
1
2
3
E
Case: TO-220AB
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
G
J
N
Moisture Sensitivity: Level 1 per J-STD-020C
Polarity: As Marked on Body
H H
Terminals: Finish – Bright Tin. Solderable per
MIL-STD-202, Method 208
P
Pin 1
Pin 2
Pin 3
Marking: Type Number
Case
Dim
Min
Max
A
14.48
15.75
B
10.00
10.40
C
2.54
3.43
D
5.90
6.40
E
2.80
3.93
G
12.70
14.27
H
2.40
2.70
J
0.69
0.93
K
3.54
3.78
L
4.07
4.82
M
1.15
1.39
N
0.30
0.50
P
2.04
2.79
All Dimensions in mm
Weight: 2.24 grams (approx.)
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MBR
Symbol 1030CT
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ TC = 105°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
Repetitive Peak Reverse Surge Current
Forward Voltage Drop
@ t £ 2.0ms
MBR
1040CT
MBR
1045CT
MBR
1050CT
MBR
1060CT
Unit
VRRM
VRWM
VR
30
35
40
45
50
60
V
VR(RMS)
21
24.5
28
31.5
35
42
V
IO
10
A
IFSM
125
A
IRRM
1.0
A
@ IF = 5.0A, TC = 125°C
@ IF = 5.0A, TC = 25°C
@ IF = 10A, TC = 25°C
VFM
@ TC = 25°C
@ TC = 125°C
IRM
0.1
15
Cj
150
pF
RqJC
30
K/W
dV/dt
1000
V/ms
Tj, TSTG
-65 to +150
°C
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated VR)
Operating and Storage Temperature Range
Notes:
MBR
1035CT
0.57
0.70
0.84
0.70
0.80
0.95
V
mA
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
DS30027 Rev. 2 - 2
1 of 2
www.diodes.com
MBR1030CT-MBR1060CT
ã Diodes Incorporated
100
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FWD CURRENT (A)
10
8
6
4
2
0
0
50
100
MBR1030CT - MBR1045CT
10
MBR1050CT / MBR1060CT
1.0
0.1
150
0
0.8
1.2
1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
300
1000
250
Cj, JUNCTION CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
TC, CASE TEMPERATURE (° C)
Fig. 1 Forward Current Derating Curve
0.4
200
150
100
50
100
Tj = 25° C
f = 1.0MHz
10
0
1
10
0.1
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
Ordering Information
1.0
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
(Note 4)
Device
Packaging
Shipping
MBR10xxCT*
TO-220AB
50/Tube
* xx = Device type, e.g. MBR1045CT
Notes:
4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf.
DS30027 Rev. 2 - 2
2 of 2
www.diodes.com
MBR1030CT-MBR1060CT
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