IRFM120A Advanced Power MOSFET FEATURES IEEE802.3af Compatible BVDSS = 100 V ! Avalanche Rugged Technology RDS(on) = 0.2 ! ! Rugged Gate Oxide Technology ! Lower Input Capacitance ID = 2.3 A ! Improved Gate Charge ! Extended Safe Operating Area SOT-223 ! Lower Leakage Current : 10 #A (Max.) @ VDS = 100V ! Lower RDS(ON) : 0.155 ! (Typ.) 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID Characteristic Value Drain-to-Source Voltage Units V 100 Continuous Drain Current (TA=25%) 2.3 Continuous Drain Current (TA=70%) 1.84 & A IDM Drain Current-Pulsed VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy ' IAR Avalanche Current & 2.3 A EAR Repetitive Avalanche Energy & 0.24 mJ dv/dt Peak Diode Recovery dv/dt ( 6.5 V/ns 2.4 W 0.019 W/% PD TJ , TSTG TL Total Power Dissipation (TA=25%) * Linear Derating Factor * Operating Junction and 18 A "20 V 123 mJ - 55 to +150 Storage Temperature Range % Maximum Lead Temp. for Soldering 300 Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol R$JA Characteristic Junction-to-Ambient * Typ. Max. Units -- 52 %/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. C N-CHANNEL POWER MOSFET IRFM120A Electrical Characteristics (TA=25% unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage .BV/.TJ VGS(th) IGSS IDSS Min. Typ. Max. Units Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source RDS(on) On-State Resistance 100 -- -- -- 0.12 -- V/% 2.0 -- 4.0 V -- -- 100 -- -- -100 -- -- 1 -- -- 10 VGS=20V VGS=-20V - VDS=30V #A VDS=100V VDS=80V,TA=125% -- -- 0.2 ) VGS=10V,ID=1.15A + S VDS=40V,ID=1.15A + 3.12 -- Ciss Input Capacitance -- 370 480 Coss Output Capacitance -- 95 110 Crss Reverse Transfer Capacitance -- 38 45 td(on) Turn-On Delay Time -- 14 40 Rise Time -- 14 40 Turn-Off Delay Time -- 36 90 Fall Time -- 28 70 Qg Total Gate Charge -- 16 22 Qgs Gate-Source Charge -- 2.7 -- Gate-Drain(“Miller”) Charge -- 7.8 -- Qgd VDS=5V,ID=250#A 100 -- tf See Fig 7 -- Forward Transconductance td(off) nA VGS=0V,ID=250#A ID=250#A -- gfs tr V Test Condition pF VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=9.2A, ns RG=18) See Fig 13 +, VDS=80V,VGS=10V, nC ID=9.2A See Fig 6 & Fig 12 + , Source-Drain Diode Ratings and Characteristics Symbol Characteristic IS Continuous Source Current Min. Typ. Max. Units -- -- 2.3 ISM Pulsed-Source Current & -- -- 18 VSD Diode Forward Voltage + -- -- 1.5 trr Reverse Recovery Time -- 98 Qrr Reverse Recovery Charge -- 0.34 A Test Condition Integral reverse pn-diode in the MOSFET V TJ=25%,IS=2.3A,VGS=0V -- ns TJ=25%,IF=9.2A -- #C diF/dt=100A/#s Notes ; & Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ' L=35mH, IAS=2.3A, VDD=25V, RG=27), Starting TJ =25% ( ISD*9.2A, di/dt*300A/#s, VDD*BVDSS , Starting TJ =25% + Pulse Test : Pulse Width = 250#s, Duty Cycle * 2% , Essentially Independent of Operating Temperature - Adjusted for Cisco + N-CHANNEL POWER MOSFET IRFM120A Fig 1. Output Characteristics Fig 2. Transfer Characteristics VGS 15V 10 V 8.0 V 7.0 V 6.0 V 5.5V 5.0 V Bottom : 4.5V 101 101 ID , Drain Current [A] ID , Drain Current [A] Top : 100 @ Notes : 1. 250 "s Pulse Test 2. TA = 25 oC 150 oC 100 25 oC @ Notes : 1. VGS = 0 V 2. VDS = 40 V 3. 250 "s Pulse Test - 55 oC -1 10-1 100 10 101 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS , Drain-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage IDR , Reverse Drain Current [A] RDS(on) , [ #] Drain-Source On-Resistance 0.4 VGS = 10 V 0.3 0.2 VGS = 20 V 0.1 o @ Note : TJ = 25 C 0.0 0 10 20 30 101 100 25 oC 10-1 0.4 40 @ Notes : 1. VGS = 0 V 2. 250 "s Pulse Test 150 oC 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage 600 Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd 400 C oss 200 00 10 @ Notes : 1. VGS = 0 V 2. f = 1 MHz C rss 101 VDS , Drain-Source Voltage [V] VDS = 20 V 10 VGS , Gate-Source Voltage [V] Capacitance [pF] C iss VDS = 50 V VDS = 80 V 5 @ Notes : ID = 9.2 A 0 0 5 10 15 QG , Total Gate Charge [nC] 20 N-CHANNEL POWER MOSFET IRFM120A Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 3.0 RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 -75 @ Notes : 1. VGS = 0 V 2. ID = 250 "A -50 -25 0 25 50 75 100 125 150 2.5 2.0 1.5 1.0 @ Notes : 1. VGS = 10 V 2. ID = 4.6 A 0.5 0.0 -75 175 -50 -25 TJ , Junction Temperature [oC] 0 25 50 75 100 125 150 175 TJ , Junction Temperature [oC] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Ambient Temperature 101 100 "s 1 ms 10 "s 10 ms 100 ms 100 DC 10-1 @ Notes : 1. TA = 25 oC 2.0 1.5 1.0 0.5 2. TJ = 150 oC 3. Single Pulse 10-2 -1 10 100 101 0.0 25 102 50 75 100 Thermal Response Fig 11. Thermal Response 102 D=0.5 1 10 0.2 @ Notes : 1. Z!J A (t)=52 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TA =PD M *Z!J A (t) 0.1 0.05 100 0.02 0.01 PDM ! t1 t2 single pulse 10- 1 10- 5 10- 4 10- 3 125 TA , Ambient Temperature [oC] VDS , Drain-Source Voltage [V] Z JA(t) , ID , Drain Current [A] Operation in This Area is Limited by R DS(on) ID , Drain Current [A] 2.5 102 10- 2 10- 1 100 t1 , Square Wave Pulse Duration 101 102 [sec] 103 150 N-CHANNEL POWER MOSFET IRFM120A Fig 12. Gate Charge Test Circuit & Waveform * Current Regulator ” VGS Same Type as DUT 50K! Qg 200nF 12V 10V 300nF VDS Qgs VGS Qgd DUT 3mA R1 R2 Current Sampling (IG) Resistor Current Sampling (ID) Resistor Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 10% 10V td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 10V tp tp Time N-CHANNEL POWER MOSFET IRFM120A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by /G • IS controlled by Duty Factor 0? Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I1