isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ12021 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 450V(Min) ·Fast Turn-Off Time APPLICATIONS ·Designed for high resolution video systems, such as : high density graphic displays, data terminals, video scanners. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current-Continuous 6 A IBM Base Current-Peak 12 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ VEBO B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ12021 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V ICEV Collector Cutoff Current VCEV=850V;VBE(off)=1.5V VCEV=850V;VBE(off)=1.5V;TC=100℃ 0.25 1.5 mA ICER Collector Cutoff Current VCE= 850V; RBE= 50Ω,TC= 100℃ 2.5 mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 1.0 mA hFE DC Current Gain IC= 8A ; VCE= 5V 5 Current-Gain—Bandwidth Product IC= 1A; VCE= 10V; ftest=1MHz 15 Output Capacitance IE= 0; VCB= 10V; ftest=1kHz fT COB CONDITIONS MIN TYP. MAX 450 UNIT V B B MHz 350 pF 550 1200 ns 100 300 ns Switching times;Inductive Load ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 5A , VCC= 60V; IB1= 1A; PW= 8μs; VBE(off)= 4V Duty Cycle≤2.0% 2