DTS2012 www.din-tek.jp N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.045 at VGS = 10 V 4 30 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Qg (Typ.) 4 nC APPLICATIONS SOT-323 SC-70 (3-LEADS) G S D 1 3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Typical ESD Protection 2000 V HBM • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC D • Portable Devices - Load Switch - Battery Switch • Load Switch for Motors, Relays and Solenoids G 2 Top View S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 TC = 70 °C TA = 25 °C 4a ID 4a, b, c 3.7b, c TA = 70 °C IDM Pulsed Drain Current (t = 300 µs) TC = 25 °C Continuous Source-Drain Diode Current TA = 25 °C Maximum Power Dissipation TA = 25 °C 20 IS 1.3b, c 2.8 1.8 PD W 1.56b, c 1.0b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A 2.3a TC = 25 °C TC = 70 °C V 4a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Symbol Typical Maximum t5s RthJA 60 80 Steady State RthJF 34 45 Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Unit °C/W Notes: a. Package limited, TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 °C/W. 1 DTS2012 www.din-tek.jp SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs ID = 250 µA VDS = VGS, ID = 250 µA V 23 mV/°C - 3.2 0.6 1.3 VDS = 0 V, VGS = ± 4.5 V ± 0.5 VDS = 0 V, VGS = ± 12 V ± 25 VDS = 30 V, VGS = 0 V 1 µA 10 VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS 5 V, VGS = 4.5 V V 15 A VGS = 10 V, ID = 3.7 A 0.036 0.045 VGS = 4.5 V, ID = 3.6 A 0.040 0.049 VGS = 2.5 V, ID = 1.5 A 0.048 0.060 VDS = 15 V, ID = 3.7 A 17 VDS = 15 V, VGS = 10 V, ID = 4.7 A 8.8 13.5 4 6 VDS = 15 V, VGS = 4.5 V, ID = 4.7 A 0.9 S Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time 1.1 f = 1 MHz td(on) tr td(off) VDD = 15 V, RL = 4.1 ID 3.7 A, VGEN = 4.5 V, Rg = 1 0.4 2 4 0.29 0.58 0.4 0.8 1.9 3.8 tf 0.75 1.5 td(on) 0.1 0.2 0.15 0.3 tr td(off) nC VDD = 15 V, RL = 4.1 ID 3.7 A, VGEN = 10 V, Rg = 1 tf 3 6 0.75 1.5 k µs Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 2.3 20 IS = 3.7 A, VGS = 0 V IF = 3.7 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.85 1.2 V 12 25 ns 5 10 nC 6.5 5.5 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTS2012 www.din-tek.jp TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 40 1.E-01 1.E-03 30 IGSS - Gate Current (A) IGSS - Gate Current (mA) 1.E-02 20 TJ = 25 °C 1.E-04 TJ = 150 °C 1.E-05 1.E-06 TJ = 25 °C 1.E-07 10 1.E-08 1.E-09 0 1.E-10 0 3 6 12 9 15 0 18 3 6 9 12 15 18 VGS - Gate-to-Source Voltage (V) VGS - Gate-Source Voltage (V) Gate Current vs. Gate-to-Source Voltage Gate Current vs. Gate-to-Source Voltage 20 10 VGS = 5 V thru 3 V VGS = 2.5 V 8 ID - Drain Current (A) ID - Drain Current (A) 16 12 VGS = 2 V 8 4 6 TC = 25 °C 4 TC = 125 °C 2 TC = - 55 °C VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 1.0 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.16 2.5 10 VGS - Gate-to-Source Voltage (V) ID = 4.7 A RDS(on) - On-Resistance (Ω) 1.5 0.12 VGS = 2.5 V 0.08 VGS = 4.5 V 0.04 VGS = 10 V 0 VDS = 15 V 8 VDS = 24 V 6 VDS = 7.5 V 4 2 0 0 4 8 12 16 ID - Drain Current (A) On-Resistance vs. Drain Current 20 0 2 4 6 8 10 Qg - Total Gate Charge (nC) Gate Charge 3 DTS2012 www.din-tek.jp TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1.6 100 VGS = 10 V; ID = 3.7 A 1.5 VGS = 4.5 V; ID = 3.7 A VGS = 2.5 V; ID = 1.5 A IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 1.4 1.3 1.2 1.1 1.0 TJ = 150 °C 10 TJ = 25 °C 1 0.9 0.8 0.7 - 50 0.1 - 25 0 25 50 75 100 125 150 0.0 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Normalized On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1.2 1.2 0.10 ID = 3.7 A 1.1 0.08 1.0 0.06 TJ = 125 °C VGS(th) (V) RDS(on) - On-Resistance (Ω) 0.2 TJ - Junction Temperature (°C) 0.04 0.9 ID = 250 μA 0.8 0.7 TJ = 25 °C 0.02 0.6 0 0.0 2.0 4.0 8.0 6.0 0.5 - 50 10.0 - 25 0 25 50 75 VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 100 125 150 100 30 Limited by RDS(on)* 25 ID - Drain Current (A) 10 Power (W) 20 15 10 100 μs 1 1 ms 10 ms 0.1 5 100 ms 1s 10 s DC TA = 25 °C Single Pulse BVDSS Limited 0 0.001 0.01 0.1 1 10 100 Time (s) Single Pulse Power, Junction-to-Ambient 1000 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 100 DTS2012 www.din-tek.jp TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 8 3.0 2.5 Power Dissipation (W) ID - Drain Current (A) 6 Package Limited 4 2.0 1.5 1.0 2 0.5 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 T F - Foot Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 DTS2012 www.din-tek.jp TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 125 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 6 1 10 Package Information www.din-tek.jp SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 1 Application Note www.din-tek.jp 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE 1 Legal Disclaimer Notice Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Din-Tek’s knowledge of typical requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death. Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Din-Tek. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. 1