Diodes SMD Type Silicon PIN diode BAP64-02 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 Features +0.05 0.8-0.05 High voltage, current controlled RF resistor for RF attenuators and switches + +0.1 0.6-0.1 - Low diode capacitance +0.1 1.6-0.1 0.77max Low diode forward resistance For applications up to 3 GHz. +0.05 0.1-0.02 0.07max Very low series inductance Absolute Maximum Ratings Ta = 25 Parameter Symbol Min Max Unit continuous reverse voltage VR 175 V continuous forward current IF 100 mA P tot 715 mW total power dissipation Ts = 90 storage temperature T stg -65 +150 junction temperature Tj -65 +150 thermal resistance from junction to soldering point R th j-s 85 K/W Electrical Characteristics Ta = 25 Parameter Symbol Conditions forward voltage VF IF = 50 mA reverse leakage current IR diode capacitance rD Unit 0.95 1.1 V 10 VR =20 V 1 VR = 0; f = 1 MHz 0.48 0.35 VR = 20 V; f = 1 MHz 0.23 0.35 IF = 0.5 mA; f = 100 MHz; note 1 20 40 IF = 1 mA; f = 100 MHz; note 1 10 20 IF = 10 mA; f = 100 MHz; note 1 2 3.8 0.7 1.35 RL = 100 LS A pF IF = 100 mA; f = 100 MHz; note 1 L series inductance Max VR =175 V when switched from IF = 10 mA to IR = 6 mA; charge carrier life time Typ VR = 1 V; f = 1 MHz Cd diode forward resistance Min 1.55 s 0.6 nH ,measured at IR = 3 mA Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. Marking Marking S www.kexin.com.cn 1