NPN BUX12 HIGH CURRENT, HIGH SPEED , HIGH POWER TRANSISTOR The BUX12 is silicon multiepitaxial planar NPN transistors in Jedec TO-3. They are intended for use in switching and linear appications in military and industrial equipment. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO VCEX IC ICM IB Pt TJ TStg Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation Junction Temperature Storage Temperature IB = 0 IE = 0 IC = 0 VBE = -1.5V tp = 10ms @ TC = 25° 250 300 7.0 300 20 25 4 150 200 -65 to +200 V V V V A A A W °C °C Value Unit 1.17 °C/W THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case COMSET SEMICONDUCTORS 1/3 NPN BUX12 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) VEB0(SUS) ICEO Ratings Test Condition(s) Collector-Emitter Sustaining Voltage IC=200 mA (*) Emitter-Base Breakdown Voltage IC=0A, IE=50 mA (*) VCE=200 V, IB=0A Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain (*) VBE(SAT) Collector-Emitter saturation Voltage (*) Base-Emitter saturation Voltage (*) IS/B Second breakdown collector current ES/B Clamped ES/B Collector current fT Transition frequency ton Turn-on time ts Storage time tf File time VCE(SAT) VCE= VCEX, VBE= -1.5V VCE= VCEX, VBE= -1.5V Tcase = 125°C VEB=5.0 V, IC=0 IC=5 A, VCE=4.0 V IC=10 A, VCE=4.0 V IC=5 A, IB=0.5 A IC=10 A, IB=1.25 A IC=10 A, IB=1.25 A VCE=30 V, ts = 1s VCE=140 , ts = 1s Vclamp=250 V, L=500 µH VCE=15 V, IC=1 A f=10 MHz IC=10 A, IB=1.25 A VCC=150 V IC=10 A, VCC=150 V IB1 = -IB2 =1.25 A Min Typ Max Unit 250 - - V 7 - - V - - 1.5 1.5 mA - - 6 20 10 5 0.15 10 0.22 0.5 1.23 - 1 60 1 1.5 1.5 - mA 8 - - MHz - 0.28 1 - 1.45 2 - 0.23 0.5 mA V A A µs (*) Pulse Duration = 300 µs, Duty Cycle <= 2% 26/10/2012 COMSET SEMICONDUCTORS 3/3 NPN BUX12 MECHANICAL DATA CASE TO-3 DIMENSIONS (mm) A B C D F G N P R U V min max 11 0.97 1.5 8.32 19 10.70 16.50 25 4 38.50 30 13.10 1.15 1.65 8.92 20 11.1 17.20 26 4.09 39.30 30.30 Pin 1 : Pin 2 : Case : Base Emitter Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 26/10/2012 [email protected] COMSET SEMICONDUCTORS 3/3