Renesas HSB88YP Silicon schottky barrier diode for high speed switching Datasheet

HSB88YP
Silicon Schottky Barrier Diode for High Speed Switching
REJ03G0590-0200
(Previous: ADE-208-932A)
Rev.2.00
Apr 01,2005
Features
• Low reverse current, Low capacitance.
• CMPAK-4 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Name
HSB88YP
C1
CMPAK-4
Package Code
(Previous Code)
PTSP0004ZB-A
(CMPAK-4)
Pin Arrangement
4
3
4
3
C1
1
(Top View)
Rev.2.00 Apr 01, 2005 page 1 of 4
2
1
(Top View)
2
1. Anode
2. Anode
3. Cathode
4. Cathode
HSB88YP
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
10
Unit
V
Reverse voltage
VR
Average rectified current
Junction temperature
IO *
Tj
15
125
mA
°C
Storage temperature
Note: 1. Per one device.
Tstg
−55 to +125
°C
1
Electrical Characteristics *1
(Ta = 25°C)
Min
Typ
Max
Unit
Forward voltage
Item
VF1
VF2
Symbol
0.350
0.500
—
—
0.420
0.580
V
IF = 1 mA
IF = 10 mA
Reverse current
IR1
IR2
—
—
—
—
0.2
10
µA
VR = 2 V
VR = 10 V
Capacitance
Capacitance deviation
C
∆C
—
—
—
—
0.80
0.10
pF
pF
VR = 0 V, f = 1 MHz
VR = 0 V, f = 1 MHz
Forward voltage deviation
2
ESD-Capabilityme *
∆VF
—
—
30
—
—
10
—
mV
V
IF = 10 mA
C = 200 pF, R = 0 Ω, Both forward
and reverse direction 1 pulse.
Notes: 1. Per one device.
2. Failure criterion ; IR > 0.4 µA at VR = 2 V
Rev.2.00 Apr 01, 2005 page 2 of 4
Test Condition
HSB88YP
Main Characteristic
10-6
10-2
10-3
Reverse current IR (A)
Forward current IF (A)
Ta = 75°C
10-4
Ta= 75°C
Ta= 25°C
10-5
10-6
Ta= −25°C
0.2
0
0.4
0.6
0.8
Ta = 25°C
10-8
10-9
10-10
Ta= −25°C
0
2
4
6
8
10
Forward voltage VF (V)
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Fig.2 Reverse current vs. Reverse voltage
f=1MHz
10
Capacitance C (pF)
10-7
1.0
0.1
0.1
1.0
10
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Rev.2.00 Apr 01, 2005 page 3 of 4
HSB88YP
Package Dimensions
JEITA Package Code
RENESAS Code
SC-82
Previous Code
PTSP0004ZB-A
MASS[Typ.]
CMPAK-4(D) / CMPAK-4(D)V
0.006g
D
e
Q
c
E
HE
L
A
A
b
e
e
Reference
A
Symbol
A1
e1
b
l1
b2
c
A — A Section
Rev.2.00 Apr 01, 2005 page 4 of 4
Pattern of terminal position areas
A
A1
b
c
D
E
e
HE
L
b2
e1
l1
Q
Dimension in Millimeters
Min
0.8
0
0.25
0.1
1.8
1.15
1.9
-
Nom
0.9
0.3
0.16
2.0
1.25
0.65
2.1
0.425
1.5
0.2
Max
1.0
0.1
0.35
0.26
2.2
1.35
2.3
0.45
0.9
-
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