BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D ● 150 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 6 A SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW83B V CBO 100 BDW83D 120 BDW83 45 BDW83B Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. 80 V 100 120 BDW83D Continuous collector current V 60 VCEO BDW83C Emitter-base voltage 80 BDW83C BDW83A Collector-emitter voltage (IB = 0) (see Note 1) UNIT 60 BDW83A Collector-base voltage (IE = 0) VALUE 45 BDW83 VEBO 5 V IC 15 A IB 0.5 A Ptot 150 W Ptot 3.5 W ½LIC2 100 mJ Tj -65 to +150 °C Tstg -65 to +150 °C TA -65 to +150 °C These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 1.2 W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VBE(on) VCE(sat) VEC Collector-emitter breakdown voltage Collector-emitter cut-off current TEST CONDITIONS IC = 30 mA IB = 0 MIN (see Note 5) BDW83 45 BDW83A 60 BDW83B 80 BDW83C 100 BDW83D 120 TYP MAX V VCE = 30 V IB = 0 BDW83 1 VCE = 30 V IB = 0 BDW83A 1 VCE = 40 V IB = 0 BDW83B 1 VCE = 50 V IB = 0 BDW83C 1 mA VCE = 60 V IB = 0 BDW83D VCB = 45 V IE = 0 BDW83 0.5 VCB = 60 V IE = 0 BDW83A 0.5 VCB = 80 V IE = 0 BDW83B 0.5 VCB = 100 V IE = 0 BDW83C 0.5 Collector cut-off VCB = 120 V IE = 0 BDW83D 0.5 current VCB = 45 V IE = 0 TC = 150°C BDW83 5 VCB = 60 V IE = 0 TC = 150°C BDW83A 5 VCB = 80 V IE = 0 TC = 150°C BDW83B 5 VCB = 100 V IE = 0 TC = 150°C BDW83C 5 VCB = 120 V IE = 0 TC = 150°C BDW83D 5 VEB = 5V IC = 0 Forward current VCE = 3V IC = 6 A transfer ratio VCE = 3V IC = 15 A VCE = 3V IC = 6 A Emitter cut-off current Base-emitter voltage Collector-emitter IB = 12 mA IC = 6 A saturation voltage IB = 150 mA IC = 15 A IE = IB = 0 Parallel diode forward voltage 15 A UNIT 1 2 750 (see Notes 5 and 6) mA mA 20000 100 (see Notes 5 and 6) 2.5 2.5 (see Notes 5 and 6) 4 3.5 V V V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 0.83 °C/W RθJA Junction to free air thermal resistance 35.7 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = 10 A IB(on) = 40 mA IB(off) = -40 mA toff Turn-off time VBE(off) = -4.2 V RL = 3 Ω tp = 20 µs, dc ≤ 2% 0.9 µs 7 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS140AG 70000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 VCE = 3 V tp = 300 µs, duty cycle < 2% 100 0·5 1·0 10 TCS140AH 2·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 1·5 1·0 0·5 20 TC = -40°C TC = 25°C TC = 100°C 0 0·5 1·0 IC - Collector Current - A 10 20 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS140AI VBE(sat) - Base-Emitter Saturation Voltage - V 3·0 TC = -40°C TC = 25°C 2·5 TC = 100°C 2·0 1·5 1·0 0·5 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0 0·5 1·0 10 20 IC - Collector Current - A Figure 3. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS140AB 10 1·0 BDW83 BDW83A BDW83B BDW83C BDW83D 0·1 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS140AB Ptot - Maximum Power Dissipation - W 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 15,2 14,7 ø 4,1 4,0 1,37 1,17 3,95 4,15 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 2 3 1,30 0,78 0,50 1,10 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS MDXXAW NOTE A: The centre pin is in electrical contact with the mounting tab. 5 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.