DSK BZX84C4V3 350mw surface mount zener diode Datasheet

Diode Semiconductor Korea
350mW Surface Mount Zener Diode BZX84C2V4-BZX84C51
FEATURES
Pb
z
Planar Die Construction.
z
350mw Power Dissipation.
z
Zener Voltages From 2.4V -51V
z
Ideally Suited For Automated Assembly Prcesses.
Lead-free
APPLICATIONS
z
350Mw Surface mount zener diode
ORDERING INFORMATION
Type No.
BZX84C2V4-BZX84C51
Marking
Package Code
See Table on page2
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Characteristic
Symbol
Value
Unit
Forward Valtage@IF=10mA
VF
0.9
V
Power Dissipation
Pd
350
mW
Thermal Resistance, Junction to Ambient Air
RθjA
357
℃/W
Operating and Storage Temperature Range
Tj，Tstg
-65 to+150
℃
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300μs pulse width, period = 5ms.
3. f = 1KHz.
www.diode.kr
Diode Semiconductor Korea
350mW Surface Mount Zener Diode BZX84C2V4-BZX84C51
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Maximum Zener
Zerner Voltage Range
Type
Marking
Number
Code
VZ@IZT
Impedance
IZT
ZZT@IZT
Typical
Maximum
Temperature
Reverse
Coefficient @IZT
Current
ZZK@IZK
mV/℃
IR
VR
Nom(V)
Min(V)
Max(V)
(mA)
(Ω)
(Ω)
(mA)
(μA)
(V)
Min
Max
BZX84C2V4
Z11
2.4
2.2
2.6
5.0
100
600
1.0
50
1.0
-3.5
0
BZX84C2V7
Z12
2.7
2.5
2.9
5.0
100
600
1.0
20
1.0
-3.5
0
BZX84C3V0
Z13
3.0
2.8
3.2
5.0
95
600
1.0
10
1.0
-3.5
0
BZX84C3V3
Z14
3.3
3.1
3.5
5.0
95
600
1.0
5.0
1.0
-3.5
0
BZX84C3V6
Z15
3.6
3.4
3.8
5.0
90
600
1.0
5.0
1.0
-3.5
0
BZX84C3V9
Z16
3.9
3.7
4.1
5.0
90
600
1.0
3.0
1.0
-3.5
0
BZX84C4V3
Z17
4.3
4.0
4.6
5.0
90
600
1.0
3.0
1.0
-3.5
0
BZX84C4V7
Z1
4.7
4.4
5.0
5.0
80
500
1.0
3.0
2.0
-3.5
0.2
BZX84C5V1
Z2
5.1
4.8
5.4
5.0
60
480
1.0
2.0
2.0
-2.7
1.2
BZX84C5V6
Z3
5.6
5.2
6.0
5.0
40
400
1.0
1.0
2.0
-2.0
2.5
BZX84C6V2
Z4
6.2
5.8
6.6
5.0
10
150
1.0
3.0
4.0
0.4
3.7
BZX84C6V8
Z5
6.8
6.4
7.2
5.0
15
80
1.0
2.0
4.0
1.2
4.5
BZX84C7V5
Z6
7.5
7.0
7.9
5.0
15
80
1.0
1.0
5.0
2.5
5.3
BZX84C8V2
Z7
8.2
7.7
8.7
5.0
15
80
1.0
0.7
5.0
3.2
6.2
BZX84C9V1
Z8
9.1
8.5
9.6
5.0
15
100
1.0
0.5
6.0
3.8
7.0
BZX84C10
Z9
10
9.4
10.6
5.0
20
150
1.0
0.2
7.0
4.5
8.0
BZX84C11
Y1
11
10.4
11.6
5.0
20
150
1.0
0.1
8.0
5.4
9.0
www.diode.kr
Diode Semiconductor Korea
350mW Surface Mount Zener Diode BZX84C2V4-BZX84C51
Maximum Zener
Zerner Voltage Range
Type
Marking
Number
Code
VZ@IZT
Impedance
IZT
ZZT@IZT
Typical
Maximum
Temperature
Reverse
Coefficient @IZT
Current
ZZK@IZK
IR
mV/℃
VR
Nom(V)
Min(V)
Max(V)
(mA)
(Ω)
(Ω)
(mA)
(μA)
(V)
Min
Max
BZX84C12
Y2
12
11.4
12.7
5.0
25
150
1.0
0.1
8.0
6.0
10.0
BZX84C13
Y3
13
12.4
14.1
5.0
30
170
1.0
0.1
8.0
7.0
11.0
BZX84C15
Y4
15
13.8
15.6
5.0
30
200
1.0
0.1
10.5
9.2
13.0
BZX84C16
Y5
16
15.3
17.1
5.0
40
200
1.0
0.1
11.2
10.4
14.0
BZX84C18
Y6
18
16.8
19.1
5.0
45
225
1.0
0.1
12.6
12.4
16.0
BZX84C20
Y7
20
18.8
21.2
5.0
55
225
1.0
0.1
14.0
14.4
18.0
BZX84C22
Y8
22
20.8
23.3
5.0
55
250
1.0
0.1
15.4
16.4
20.0
BZX84C24
Y9
24
22.8
25.6
5.0
70
250
1.0
0.1
16.8
18.4
22.0
BZX84C27
Y10
27
25.1
28.9
2.0
80
300
0.5
0.1
18.9
21.4
25.3
BZX84C30
Y11
30
28.0
32.0
2.0
80
300
0.5
0.1
21.0
24.4
29.4
BZX84C33
Y12
33
31.0
35.0
2.0
80
325
0.5
0.1
23.1
27.4
33.4
BZX84C36
Y13
36
34.0
38.0
2.0
90
350
0.5
0.1
25.2
30.4
37.4
BZX84C39
Y14
39
37.0
41.0
2.0
130
350
0.5
0.1
27.3
33.4
41.2
BZX84C43
Y15
43
40.0
46.0
2.0
150
375
0.5
0.1
30.1
10.0
12.0
BZX84C47
Y16
47
44.0
50.0
2.0
170
375
0.5
0.1
32.9
10.0
12.0
BZX84C51
Y17
51
48.0
54.0
2.0
180
400
0.5
0.1
35.7
10.0
12.0
www.diode.kr
Diode Semiconductor Korea
350mW Surface Mount Zener Diode BZX84C2V4-BZX84C51
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
www.diode.kr
Diode Semiconductor Korea
350mW Surface Mount Zener Diode BZX84C2V4-BZX84C51
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
SOT-23
Dim
Min
Max
A
2.85
2.95
B
1.25
1.35
C
1.0Typical
D
0.37
0.43
E
0.35
0.48
G
1.85
1.95
H
0.02
0.1
J
K
0.1Typical
2.35
2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
Device
Package
Shipping
BZX84C2V4-BZX84C51
SOT-23
3000/Tape&Reel
www.diode.kr