Rohm DTB114EK Pnp -500ma -50v digital transistors (bias resistor built-in transistors) Datasheet

DTB114EK
Datasheet
PNP -500mA -50V Digital Transistors (Bias Resistor Built-in Transistors)
Outline
Parameter
Value
VCC
50V
500mA
10k
10k
IC(MAX.)
R1
R2
SMT3
OUT
IN
GND
DTB114EK
SOT‐346 (SC‐59)
Inner circuit
Features
1) Built-In Biasing Resistors, R1 = R2 = 10k.
OUT
R1
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Complementary NPN Types Available.(DTD114EK)
6) Lead Free/RoHS Compliant.
IN
R2
GND(+)
OUT
IN
GND(+)
Application
・Inverter circuit
・Interface circuit
・Driver circuit
Packaging specifications
Part No.
DTB114EK
Package
Package
size
(mm)
Taping
code
SMT3
2928
T146
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© 2012 ROHM Co., Ltd. All rights reserved.
1/5
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
Marking
8
F14
180
3,000
2012.02 - Rev.C
Data Sheet
DTB114EK
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Values
Unit
Supply voltage
VCC
50
V
Input voltage
VIN
40 to 10
V
Output current
IC
500
mA
PD *2
200
mW
Tj
150
C
Tstg
55 to 150
C
Power dissipation
Junction temperature
Range of storage temperature
Electrical characteristics(Ta = 25C)
Parameter
Symbol
1) Built-In Biasing Resistors, R1
= R2 = 10k.
VI(off)
Output voltage
Input current
Output current
Min.
Typ.
Max.
VCC = 5V, IO = 100μA
-
-
0.5
VI(on)
VO = 0.3V, IO = 10mA
3
-
-
VO(on)
IO / II = 50mA / 2.5mA
-
0.1
0.3
V
VI = 5V
-
-
0.88
mA
VCC = 50V, VI = 0V
-
-
0.5
A
56
-
-
-
II
IO(off)
Conditions
VO = 5V, IO = 50mA
Unit
V
DC current gain
GI
Input resistance
R1
-
7
10
13
k
Resistance ratio
R2/R1
-
0.8
1
1.2
-
-
250
-
MHz
Transition frequency
fT
*1
VCE = 10V, IE = 50mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
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2/5
2012.02 - Rev.C
Data Sheet
DTB114EK
Electrical characteristic curves(Ta = 25°C)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.1 Input voltage vs. output current
(ON characteristics)
−10m
−100
−5m
VO = −0.3V
−50
−20
−10
OUTPUT CURRENT : IO [A]
INPUT VOLTAGE : VI(on) [V]
−2m
Ta = −40oC
25oC
100oC
−5
−2
−1
−500m
−200m
−100m
−500µ −1m −2m
−1m
−500μ
−200μ
−100μ
−50μ
−20μ
−10μ
−5μ
−2μ
−1μ
0
−5m −10m −20m −50m −100m −200m −500m
Fig.3 Output current vs. output voltage
0.6mA
0.4mA
-100
0.2mA
0A
0
0
-5
−2.5
−3
o
200
100
Ta=100 C
25oC
−40oC
50
20
10
5
2
1
−500μ −1m −2m
-10
OUTPUT VOLTAGE : VO [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
−2
VO= −5V
500
1.0mA
0.8mA
-200
−1.5
1k
DC CURRENT GAIN : GI
OUTPUT CURRENT : IO [mA]
1.2mA
−1
Fig.4 DC current gain vs. output current
II= 2.0mA 1.8mA 1.6mA 1.4mA
Ta=25ºC
−0.5
INPUT VOLTAGE : VI(off)[V]
OUTPUT CURRENT : IO [A]
-300
VCC= −5V
Ta=100oC
25oC
−40oC
−5m −10m −20m −50m −100m −200m −500m
OUTPUT CURRENT : IO [A]
3/5
2012.02 - Rev.C
Data Sheet
DTB114EK
Electrical characteristic curves(Ta = 25°C)
Fig.5 Output voltage vs. output current
−1
OUTPUT VOLTAGE : VO(on) [V]
−500m
−200m
Ta=100oC
25oC
−40oC
lO/lI = 20
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−500μ -1m -2m
-5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT : IO [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
4/5
2012.02 - Rev.C
Data Sheet
DTB114EK
Dimensions (Unit : mm)
D
SMT3
A
c
Lp
L1
E
HE
Q
e
A3
b
x
S A
A1
l1
A
e1
e
S
b2
Patterm of terminal position areas
DIM
A
A1
A3
b
c
D
E
e
HE
L1
Lp
Q
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
1.00
1.30
0.00
0.10
0.25
0.35
0.50
0.09
0.25
2.80
3.00
1.50
1.80
0.95
2.60
3.00
0.30
0.60
0.40
0.70
0.20
0.30
0.10
0.10
MILIMETERS
MIN
MAX
2.10
0.60
0.90
INCHES
MIN
0
MAX
0.051
0.004
0.01
0.014
0.004
0.11
0.059
0.02
0.01
0.118
0.071
0.04
0.102
0.012
0.016
0.008
-
0.118
0.024
0.028
0.012
0.004
0.004
INCHES
MIN
MAX
0.08
-
0.024
0.035
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
5/5
2012.02 - Rev.C
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R1120A
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