MBR3020CT THRU MBR30200CT 星合电子 SCHOTTKY BARRIER RECTIFIER ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ Reverse Voltage - 20 to 200 Volts Forward Current - 30Amperes FEATURES TO-220AB Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction 0.185(4.70) Guard ring for overvoltage protection Low power loss ,high efficiency 0.410(10.41) 0.161(4.10) 0.390(9.91) 0.147(3.74) DIA 0.175(4.44) 0.055(1.39) 0.045(1.14) High current capability ,Low forward voltage drop 0.114(2.90) XH MBR3060CT Single rectifier construction 0.102(2.60) 0.283(7.20) 0.244(6.20) High surge capability For use in low voltage ,high frequency inverters, free wheeling ,and polarity protection applications 1 High temperature soldering guaranteed:260 C/10 seconds, 0.25"(6.35mm)from case PIN 2 3 0.159(4.05) 1.161(29.50) 0.138(3.50) 1.106(28.10) 0.114(2.90) 0.098(2.50) 0.560(14.22) Component in accordance to RoHS 2002/95/EC and 0.053(1.34) 0.516(13.10) 0.047(1.20) WEEE 2002/96/EC 0.037(0.94) 0.027(0.68) MECHANICAL DATA 0.105(2.67) 0.023(0.58) 0.095(2.41) 0.014(0.35) 0.208(5.28) Case: JEDEC TO-220AB molded plastic body 0.192(4.88) Terminals: Lead solderable per MIL-STD-750,method 2026 Polarity: As marked Dimensions in inches and (millimeters) Mounting Position: Any Weight: 0.08ounce, 2.24 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive load. For capacitive load,derate by 20%.) Symbols Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Per leg Total device Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum average forward rectified current(see Fig.1) MBR 3060CT 20 30 40 45 60 80 100 150 200 14 21 28 32 42 56 70 105 140 20 30 40 45 60 80 100 150 200 Units Volts Volts Volts Amps IFSM 250.0 Amps IR Typical thermal resistance (Note 2) R Operating junction temperature range TJ TSTG Notes: 1.Pulse test: 300 MBR 3045CT I(AV) VF Storage temperature range MBR 3040CT 15.0 30.0 Maximum instantaneous reverse current at rated DC blocking voltage(Note 1) T C =125 C MBR 3030CT VRRM VRMS VDC Maximum instantaneous forward voltage at 30.0 A T C =25 C MBR MBR MBR MBR 3080CT 30100CT 30150CT 30200CT MBR 3020CT 0.60 0.75 0.85 0.95 0.2 30 50 -65 to+150 C -65 to+150 C s pulse width,1% duty cycle 2.Thermal resistance from junction to case 1 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ ＣＯ．，ＬＴＤ． mA C/W 3.0 JC Volts ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ 星合电子 MBR3020CT THRU MBR30200CT ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ RATING AND CHARACTERISTIC CURVES FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PER DIODE 300 50 250 PEAK FORWARD SURGE CURRENT(AMPERES) AVERAGE FORWARD CURRENT AMPERES FIG.1-FORWARD CURRENT DERATING CURVE 40 30 20 SINGLE PHASE HALF WAVE 50Hz INDUCTIVE OR RESISTIVE LOAD 10 200 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 150 MBR3020CT - MBR3045CT MBR3060CT - MBR30200CT 100 50 0 0 50 100 0 150 1.0 LEAD TEMPERATURE ( C) 2.0 5.0 10 20 50 NUMBER OF CYCLES AT 60Hz FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4-TYPICAL REVERSE CHARACTERISTICS 10 MBR3020CT-MBR3045CT 10 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT( AMPERES) 100 MBR3060CT-MBR30200CT 1.0 TJ=25 C PULSE WIDTH=300 S 1% DUTY CYCLE 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Tc=125 C 1.0 Tc=75 C 0.1 Tc=25 C 0.01 INSTANTANEOUS FORWARD VOLTAGE (VOLTS) MBR3020CT-MBR3045CT MR3060CT-MBR30100CT 0.001 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE 2 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ ＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ 140 100