Vishay IRFBC20 Power mosfet Datasheet

IRFBC20, SiHFBC20
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Dynamic dV/dt Rating
600
RDS(on) (Ω)
VGS = 10 V
RoHS*
Qg (Max.) (nC)
18
• Fast Switching
Qgs (nC)
3.0
• Ease of Paralleling
8.9
• Simple Drive Requirements
Qgd (nC)
Configuration
Single
DESCRIPTION
TO-220AB
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
G
D
COMPLIANT
• Compliant to RoHS Directive 2002/95/EC
D
G
Available
• Repetitive Avalanche Rated
4.4
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRFBC20PbF
SiHFBC20-E3
IRFBC20
SiHFBC20
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
Pulsed Drain
VGS at 10 V
TC = 25 °C
TC = 100 °C
Currenta
ID
IDM
Linear Derating Factor
Single Pulse Avalanche
Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche
Energya
Maximum Power Dissipation
Peak Diode Recovery
TC = 25 °C
dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
UNIT
V
2.2
1.4
A
8.0
0.40
W/°C
EAS
84
mJ
IAR
2.2
A
EAR
5.0
mJ
PD
50
W
dV/dt
3.0
V/ns
TJ, Tstg
- 55 to + 150
300d
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 31 mH, Rg = 25 Ω, IAS = 2.2 A (see fig. 12).
c. ISD ≤ 2.2 A, dI/dt ≤ 40 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91106
S11-0514-Rev. B, 21-Mar-11
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1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC20, SiHFBC20
Vishay Siliconix
THERMAL RESISTANCE
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
2.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
VDS
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
600
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.88
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
-
-
100
VDS = 480V, VGS = 0 V, TJ = 125 °C
-
-
500
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
μA
-
-
4.4
Ω
VDS = 50 V, ID = 1.3 Ab
1.4
-
-
S
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
350
-
-
48
-
-
8.6
-
-
-
18
ID = 1.3 Ab
VGS = 10 V
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
-
-
3.0
Gate-Drain Charge
Qgd
-
-
8.9
Turn-On Delay Time
td(on)
-
10
-
-
23
-
-
30
-
-
25
-
-
4.5
-
-
7.5
-
-
-
2.2
-
-
8.0
-
2.0
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V
ID = 2.0 A, VDS = 360 V
see fig. 6 and 13b
VDD = 300 V, ID = 2.0 A
Rg = 18 Ω, RD= 150 Ω
see fig. 10b
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
pF
nC
ns
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
TJ = 25 °C, IS = 2.2 A, VGS = 0 Vb
-
Body Diode Reverse Recovery Time
trr
290
580
ns
Qrr
TJ = 25 °C, IF = 2.0 A,
dI/dt = 100 A/μsb
-
Body Diode Reverse Recovery Charge
-
0.67
1.3
μC
Forward Turn-On Time
ton
S
V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
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Document Number: 91106
S11-0514-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC20, SiHFBC20
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Document Number: 91106
S11-0514-Rev. B, 21-Mar-11
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC20, SiHFBC20
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91106
S11-0514-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC20, SiHFBC20
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91106
S11-0514-Rev. B, 21-Mar-11
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC20, SiHFBC20
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
D.U.T.
RG
+
-
IAS
V DD
VDS
10 V
0.01 Ω
tp
Fig. 12a - Unclamped Inductive Test Circuit
IAS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91106
S11-0514-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC20, SiHFBC20
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91106.
Document Number: 91106
S11-0514-Rev. B, 21-Mar-11
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-220-1
A
E
DIM.
Q
H(1)
D
3
2
L(1)
1
M*
L
b(1)
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
F
ØP
MILLIMETERS
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
0.115
J(1)
2.41
2.92
0.095
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
ASE
Revison: 14-Dec-15
Xi’an
Document Number: 66542
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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
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Revision: 08-Feb-17
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Document Number: 91000
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