MC3346 General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays The MC3346 is designed for general purpose, low power applications for consumer and industrial designs. • Guaranteed Base−Emitter Voltage Matching • Operating Current Range Specified: 10 μA to 10 mA • Five General Purpose Transistors in One Package http://onsemi.com GENERAL PURPOSE TRANSISTOR ARRAY SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 15 Vdc Collector−Base Voltage VCBO 20 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector−Substrate Voltage VCIO 20 Vdc Collector Current − Continuous IC 50 mAdc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 1.2 10 W mW/°C Operating Temperature Range TA −40 to +85 °C Storage Temperature Range Tstg −65 to +150 °C 14 1 P SUFFIX PLASTIC PACKAGE CASE 646 14 1 D SUFFIX PLASTIC PACKAGE CASE 751A (SO−14) PIN CONNECTIONS 1 4 13 12 11 10 ORDERING INFORMATION 9 8 Device Q4 Q5 MC3346D MC3356P Q1 1 2 Q2 3 4 Operating Temperature Range TA = − 40° to +85°C Package SO−14 Plastic DIP Q3 5 6 7 Pin 13 is connected to substrate and must remain at the lowest circuit potential. © Semiconductor Components Industries, LLC, 2006 July, 2006 − Rev. 2 1 Publication Order Number: MC3346/D MC3346 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted.) Characteristics Symbol Min Typ Max Unit Collector−Base Breakdown Voltage (IC = 10 μAdc) V(BR)CBO 20 60 − Vdc Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc) V(BR)CEO 15 − − Vdc Collector−Substrate Breakdown Voltage (IC = 10 μA) V(BR)CIO 20 60 − Vdc Emitter−Base Breakdown Voltage (IE = 10 μAdc) V(BR)EBO 5.0 7.0 − Vdc Collector−Base Cutoff Current (VCB = 10 Vdc, IE = 0) ICBO − − 40 nAdc DC Current Gain (IC = 10 mAdc, VCE = 3.0 Vdc) (IC = 1.0 mAdc, VCE = 3.0 Vdc) (IC = 10 μAdc, VCE = 3.0 Vdc) hFE − 40 − 140 130 60 − − − Base−Emitter Voltage (VCE = 3.0 Vdc, IE = 1.0 mAdc) (VCE = 3.0 Vdc, IE = 10 mAdc) VBE − − 0.72 0.8 − − |IIO1 − IIO2| − 0.3 2.0 μAdc − − 0.5 5.0 mVdc Temperature Coefficient of Base−Emitter Voltage (VCE = 3.0 Vdc, IC = 1.0 mAdc) ΔVBE DT − −1.9 − mV/°C Temperature Coefficient ⎪ΔVIO⎪ DT − 1.0 − μV/°C ICEO − − 0.5 μAdc Low Frequency Noise Figure (VCE = 3.0 Vdc, IC = 100 μAdc, RS = 1.0 kΩ, f = 1.0 kHz) NF − 3.25 − dB Forward Current Transfer Ratio (VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hFE − 110 − − Short Circuit Input Impedance (VCE = 3.0 Vdc, IC = 1.0 mAdc) hie − 3.5 − kΩ Open Circuit Output Impedance (VCE = 3.0 Vdc, IC = 1.0 mAdc) hoe − 15.6 − μmhos Reverse Voltage Transfer Ratio (VCE = 3.0 Vdc, IC = 1.0 mAdc) hre − 1.8 − x10−4 Forward Transfer Admittance (VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 MHz) yfe − 31−j1.5 − − Input Admittance (VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 MHz) yie − 0.3 + j0.04 − − Output Admittance (VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 MHz) yoe − 0.001 + j0.03 − − fT 300 550 − MHz Emitter−Base Capacitance (VEB = 3.0 Vdc, IE = 0) Ceb − 0.6 − pF Collector−Base Capacitance (VCB = 3.0 Vdc, IC = 0) Ccb − 0.58 − pF Collector−Substrate Capacitance (VCS = 3.0 Vdc, IC = 0) CCI − 2.8 − pF STATIC CHARACTERISTICS Input Offset Current for Matched Pair Q1 and Q2 (VCE = 3.0 Vdc, IC = 1.0 mAdc) Magnitude of Input Offset Voltage (VCE = 3.0 Vdc, IC = 1.0 mAdc) Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) − Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (VCE = 3.0 Vdc, IC = 3.0 mAdc) http://onsemi.com 2 102 ICBD , COLLECTOR CUTOFF CURRENT (nAdc) IB = 0 VCE = 10 V 1.0 VCE = 5.0 V 10−1 10−2 10−3 0 25 50 75 100 125 102 101 VCB = 15 V VCB = 10 V 10−1 10−2 0 25 TA, AMBIENT TEMPERATURE (°C) 50 75 100 TA, AMBIENT TEMPERATURE (°C) V FE, BASE-EMITTER VOLTAGE (V) 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.9 5.0 0.8 4.0 VBE 0.7 3.0 2.0 0.6 0.5 1.0 VIO 0.4 0.02 0.03 0.05 0.1 0.2 0.3 0.5 0.7 1.0 0.01 0.05 0.1 0.5 1.0 5.0 0 10 IE, EMITTER CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 3. Input Offset Characteristics for Q1 and Q2 Figure 4. Base−Emitter and Input Offset Voltage Characteristics 140 3.5 3.0 130 2.5 2.0 hFE 110 1.5 1.0 90 0.95 hFE1 hFE2 or hFE2 hFE1 70 50 0.01 125 Figure 2. Collector Cutoff Current versus Temperature (Each Transistor) 1.0 0.7 0.5 h FE , DC CURRENT GAIN IIO , INPUT OFFSET CURRENT (μ Adc) Figure 1. Collector Cutoff Current versus Temperature (Each Transistor) 0.01 0.01 VCB = 5.0 V 1.0 0.05 0.1 0.5 1.0 IE, EMITTER CURRENT (mAdc) Figure 5. DC Current Gain http://onsemi.com 3 5.0 0.9 0.85 0.8 0.75 10 V IO, INPUT OFFSET VOLTAGE (mVdc) 101 103 h FE1/h FE2 , DC CURRENT GAIN RATIO ICBD , COLLECTOR CUTOFF CURRENT (nAdc) MC3346 MC3346 PACKAGE DIMENSIONS P SUFFIX PLASTIC PACKAGE CASE 646−06 ISSUE M 14 8 1 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. B A F L N C −T− SEATING PLANE H G D 14 PL J K 0.13 (0.005) M M http://onsemi.com 4 DIM A B C D F G H J K L M N INCHES MIN MAX 0.715 0.770 0.240 0.260 0.145 0.185 0.015 0.021 0.040 0.070 0.100 BSC 0.052 0.095 0.008 0.015 0.115 0.135 0.290 0.310 −−− 10_ 0.015 0.039 MILLIMETERS MIN MAX 18.16 18.80 6.10 6.60 3.69 4.69 0.38 0.53 1.02 1.78 2.54 BSC 1.32 2.41 0.20 0.38 2.92 3.43 7.37 7.87 −−− 10_ 0.38 1.01 MC3346 PACKAGE DIMENSIONS D SUFFIX PLASTIC PACKAGE CASE 751A−03 (SO−8) ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. −A− 14 8 −B− 1 0.25 (0.010) 7 G D 14 PL 0.25 (0.010) T B M F M K M B M R X 45 _ C −T− SEATING PLANE P 7 PL S A J S DIM A B C D F G J K M P R MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.228 0.244 0.010 0.019 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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