ON MC3356P General purpose transistor array one differentially connected pair Datasheet

MC3346
General Purpose Transistor
Array One Differentially
Connected Pair and Three
Isolated Transistor Arrays
The MC3346 is designed for general purpose, low power
applications for consumer and industrial designs.
• Guaranteed Base−Emitter Voltage Matching
• Operating Current Range Specified: 10 μA to 10 mA
• Five General Purpose Transistors in One Package
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GENERAL PURPOSE
TRANSISTOR ARRAY
SEMICONDUCTOR
TECHNICAL DATA
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
15
Vdc
Collector−Base Voltage
VCBO
20
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
Collector−Substrate Voltage
VCIO
20
Vdc
Collector Current − Continuous
IC
50
mAdc
Total Power Dissipation @ TA =
25°C
Derate above 25°C
PD
1.2
10
W
mW/°C
Operating Temperature Range
TA
−40 to +85
°C
Storage Temperature Range
Tstg
−65 to +150
°C
14
1
P SUFFIX
PLASTIC PACKAGE
CASE 646
14
1
D SUFFIX
PLASTIC PACKAGE
CASE 751A
(SO−14)
PIN CONNECTIONS
1
4
13
12
11
10
ORDERING INFORMATION
9
8
Device
Q4
Q5
MC3346D
MC3356P
Q1
1
2
Q2
3
4
Operating
Temperature Range
TA = − 40° to +85°C
Package
SO−14
Plastic DIP
Q3
5
6
7
Pin 13 is connected to substrate and must remain at the lowest circuit potential.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 2
1
Publication Order Number:
MC3346/D
MC3346
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted.)
Characteristics
Symbol
Min
Typ
Max
Unit
Collector−Base Breakdown Voltage
(IC = 10 μAdc)
V(BR)CBO
20
60
−
Vdc
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc)
V(BR)CEO
15
−
−
Vdc
Collector−Substrate Breakdown Voltage
(IC = 10 μA)
V(BR)CIO
20
60
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 μAdc)
V(BR)EBO
5.0
7.0
−
Vdc
Collector−Base Cutoff Current
(VCB = 10 Vdc, IE = 0)
ICBO
−
−
40
nAdc
DC Current Gain
(IC = 10 mAdc, VCE = 3.0 Vdc)
(IC = 1.0 mAdc, VCE = 3.0 Vdc)
(IC = 10 μAdc, VCE = 3.0 Vdc)
hFE
−
40
−
140
130
60
−
−
−
Base−Emitter Voltage
(VCE = 3.0 Vdc, IE = 1.0 mAdc)
(VCE = 3.0 Vdc, IE = 10 mAdc)
VBE
−
−
0.72
0.8
−
−
|IIO1 − IIO2|
−
0.3
2.0
μAdc
−
−
0.5
5.0
mVdc
Temperature Coefficient of Base−Emitter Voltage
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
ΔVBE
DT
−
−1.9
−
mV/°C
Temperature Coefficient
⎪ΔVIO⎪
DT
−
1.0
−
μV/°C
ICEO
−
−
0.5
μAdc
Low Frequency Noise Figure
(VCE = 3.0 Vdc, IC = 100 μAdc, RS = 1.0 kΩ, f = 1.0 kHz)
NF
−
3.25
−
dB
Forward Current Transfer Ratio
(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hFE
−
110
−
−
Short Circuit Input Impedance
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
hie
−
3.5
−
kΩ
Open Circuit Output Impedance
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
hoe
−
15.6
−
μmhos
Reverse Voltage Transfer Ratio
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
hre
−
1.8
−
x10−4
Forward Transfer Admittance
(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 MHz)
yfe
−
31−j1.5
−
−
Input Admittance
(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 MHz)
yie
−
0.3 + j0.04
−
−
Output Admittance
(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 MHz)
yoe
−
0.001 +
j0.03
−
−
fT
300
550
−
MHz
Emitter−Base Capacitance
(VEB = 3.0 Vdc, IE = 0)
Ceb
−
0.6
−
pF
Collector−Base Capacitance
(VCB = 3.0 Vdc, IC = 0)
Ccb
−
0.58
−
pF
Collector−Substrate Capacitance
(VCS = 3.0 Vdc, IC = 0)
CCI
−
2.8
−
pF
STATIC CHARACTERISTICS
Input Offset Current for Matched Pair Q1 and Q2
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
Magnitude of Input Offset Voltage
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
Collector−Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
−
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(VCE = 3.0 Vdc, IC = 3.0 mAdc)
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2
102
ICBD , COLLECTOR CUTOFF CURRENT (nAdc)
IB = 0
VCE = 10 V
1.0
VCE = 5.0 V
10−1
10−2
10−3
0
25
50
75
100
125
102
101
VCB = 15 V
VCB = 10 V
10−1
10−2
0
25
TA, AMBIENT TEMPERATURE (°C)
50
75
100
TA, AMBIENT TEMPERATURE (°C)
V FE, BASE-EMITTER VOLTAGE (V)
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.9
5.0
0.8
4.0
VBE
0.7
3.0
2.0
0.6
0.5
1.0
VIO
0.4
0.02 0.03
0.05
0.1
0.2
0.3
0.5 0.7 1.0
0.01
0.05
0.1
0.5
1.0
5.0
0
10
IE, EMITTER CURRENT (mAdc)
IC, COLLECTOR CURRENT (mAdc)
Figure 3. Input Offset Characteristics
for Q1 and Q2
Figure 4. Base−Emitter and Input Offset
Voltage Characteristics
140
3.5
3.0
130
2.5
2.0
hFE
110
1.5
1.0
90
0.95
hFE1
hFE2
or
hFE2
hFE1
70
50
0.01
125
Figure 2. Collector Cutoff Current
versus Temperature (Each Transistor)
1.0
0.7
0.5
h FE , DC CURRENT GAIN
IIO , INPUT OFFSET CURRENT (μ Adc)
Figure 1. Collector Cutoff Current
versus Temperature (Each Transistor)
0.01
0.01
VCB = 5.0 V
1.0
0.05
0.1
0.5
1.0
IE, EMITTER CURRENT (mAdc)
Figure 5. DC Current Gain
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3
5.0
0.9
0.85
0.8
0.75
10
V IO, INPUT OFFSET VOLTAGE (mVdc)
101
103
h FE1/h FE2 , DC CURRENT GAIN RATIO
ICBD , COLLECTOR CUTOFF CURRENT (nAdc)
MC3346
MC3346
PACKAGE DIMENSIONS
P SUFFIX
PLASTIC PACKAGE
CASE 646−06
ISSUE M
14
8
1
7
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
B
A
F
L
N
C
−T−
SEATING
PLANE
H
G
D 14 PL
J
K
0.13 (0.005)
M
M
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4
DIM
A
B
C
D
F
G
H
J
K
L
M
N
INCHES
MIN
MAX
0.715
0.770
0.240
0.260
0.145
0.185
0.015
0.021
0.040
0.070
0.100 BSC
0.052
0.095
0.008
0.015
0.115
0.135
0.290
0.310
−−−
10_
0.015
0.039
MILLIMETERS
MIN
MAX
18.16
18.80
6.10
6.60
3.69
4.69
0.38
0.53
1.02
1.78
2.54 BSC
1.32
2.41
0.20
0.38
2.92
3.43
7.37
7.87
−−−
10_
0.38
1.01
MC3346
PACKAGE DIMENSIONS
D SUFFIX
PLASTIC PACKAGE
CASE 751A−03
(SO−8)
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
−A−
14
8
−B−
1
0.25 (0.010)
7
G
D 14 PL
0.25 (0.010)
T B
M
F
M
K
M
B
M
R X 45 _
C
−T−
SEATING
PLANE
P 7 PL
S
A
J
S
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
8.55
8.75
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.337
0.344
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.228
0.244
0.010
0.019
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