Roithner ADL-63102TRTL Bar-code scanner line maker, leveler high visibility ld display Datasheet

ADL-63102TR/TL
AlGaInP Visible Laser Diode
2003/8
★635nm 10mW 50 oC Reliable Operation
• Features
1. Short wavelength: 635nm (Typ.)
2. High output power: 10mW CW
3. Low threshold current: Ith= 35mA (Typ.)
4. Low operation voltage: Vop= 2.15V (Typ.)
5. High temperature: Tc = 50oC
6. MTTF > 3000hrs
• Applications
1. Bar-code scanner
2. Line maker, Leveler
3. High visibility LD display
• Absolute maximum ratings
Parameter
Light output power
Reverse voltage (LD)
Reverse voltage (PD)
Forward current (PD)
Case temperature
Storage temperature
Symbol Condition
PO
CW
VRL
VRD
IFD
TC
TS
-
Rating
12
2
30
10
-10~+50
-40~+75
Unit
mW
V
V
mA
o
C
o
C
• Electrical and optical characteristics (Tc=25 oC)
Parameter
Peak wavelength
Threshold current
Operating current
Operating voltage
Differential efficiency
Monitor current
Parallel divergence angle
Perpendicular divergence angle
Parallel FFP deviation angle
Perpendicular FFP deviation angle
Emission point accuracy
Symbol
λ
Ith
Iop
Vop
η
Im
θ//
θ⊥
Δθ//
Δθ⊥
ΔxΔyΔz
Min.
630
20
40
2
0.25
0.05
6
30
-
Typ.
635
30
55
2.15
0.50
0.1
7.5
33
-
Max.
640
40
65
2.5
0.65
0.5
11
40
±2.9
±1.9
±80
Unit
nm
mA
mA
V
mW/mA
mA
deg
deg
deg
deg
um
Conditions
Po=10mW
Po=10mW
Po=10mW
Po=5-10mW
Po=10mW, VRD=5V
Po=5mW
Precautions
1. Do not operate the device above the maximum rating condition, even momentarily. It may cause unexpected permanent damage to the device.
2. Semiconductor laser device is very sensitive to electrostatic discharge. High voltage spike current may change the characteristics of the device, or malfunction at any time during
its service period. Therefore, proper measures for preventing electrostatic discharge are strongly recommended.
3. Effective heat sink can help the device operates under a more relax condition; as a result, a more stable characteristics and better reliability can be achieved. So it is
recommended that always apply proper heat sink before the device is operating.
ADL-63102TR/TL
AlGaInP Visible Laser Diode
2003/8
Laser characteristics
Output power vs. Forward current
22
0.7
3
0.5
20
20
0.6
18
0.5
Power (mW)
0.3
0.4
2
0.1
40
50
60
70
o
50 C
80
90
o
60 C
o
2
0
0.0
30
o
40 C
o
0
20
0.0
10
o
25 C
8
4
2
0
10
6
0.1
4
12
30 C
0.2
6
14
1
0.3
0.2
Power (mW)
8
16
SE(W/A)
10
Voltage (V)
12
Monitor Current (mA)
14
0
18
0.4
16
100
70 C
0
20
40
60
80
100
120
140
C u rre n t (m A)
C u rren t (m A)
Power (mW)
Max Power
50
10 0
40
80
30
60
20
40
10
20
M ax P o w er:39.5m W
0
0
0
50
100
150
0
20
40
60
80
100
C u rren t (m A)
Reliability
MTTF
140
100
120
Cumulative Failure (%)
Operation Current (mA)
100
80
60
40
10
AD L 63102T L
20
AD L 63102T L
M T T F =4048hrs
o
10m W /50 C
0
0
100
200
300
400
T im e (h rs )
500
600
700
1
10
2
10
3
10
T im e (h rs )
4
10
5
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