SiC Power Module Data Sheet BSM120C12P2C201 lApplication lCircuit diagram Motor drive 1 Converter 10(N.C) Photovoltaics, wind power generation. 9 8(N.C) lFeatures 3,4 5 6 7(N.C) 1) Low surge, low switching loss. 2 2) High-speed switching possible. *Do not connect anything to NC pin. 3) Reduced temperature dependence. lConstruction This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM. lDimensions & Pin layout (Unit : mm) 10 9 8 7 6 5 4 1 2 3 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/10 2016.10 - Rev.A Data Sheet BSM120C12P2C201 lAbsolute maximum ratings (Tj = 25°C) Parameter Drain-source voltage Conditions Symbol VDSS G-S short VDSS Clamp diode Repetitive reverse voltage Gate-source voltage(+) VGSS Gate-source voltage(-) G - S Voltage (tsurge<300nsec) VGSS_surge ID 1 IDRM Drain current * IDRM IS 1 ISRM Source current * ISRM IF 1 I Forward curent (clamp diode) * FRM IFRM Total power disspation *4 Max Junction Temperature Junction temperature Storage temperature Ptot Tjmax Tjop Tstg Isolation voltage Visol Limit 1200 1200 22 D-S short D-S short DC (Tc=60°C) Pulse (Tc=60°C) 1ms *2 Pulse (Tc=60°C) 10us *2 *3 DC (Tc=60°C ) VGS=18V Pulse (Tc=60°C) 1ms VGS=18V *2 2 3 Pulse (Tc=60°C) 10us VGS=18V * * DC (Tc=60°C ) VGS=18V Pulse (Tc=60°C) 1ms VGS=18V *2 Pulse (Tc=60°C) 10us VGS=18V *2 *3 Tc=25°C -6 -10 to 26 134 240 360 134 240 360 134 240 360 935 175 Unit V A W -40 to150 -40 to125 °C 2500 Vrms Terminals to baseplate, f=60Hz AC 1min. 4.5 Main Terminals : M6 screw N·m Mounting to heat shink : M5 screw 3.5 (*1) Case temperature (Tc) is defined on the surface of base plate just under the chips. (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T j max. - Mounting torque (*3) Please use an appropriate external gate resistor not to exceed maximum ratings of Drain - Source Voltage. (*4) Tj is less than 175°C Example of acceptable VGS waveform +26V tsurge +22V 0V tsurge -6V -10V www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 2/10 2016.10 - Rev.A Data Sheet BSM120C12P2C201 lElectrical characteristics (Tj=25°C) Parameter Conditions Symbol On-state static Drain-Source Voltage Tj=25°C Tj=125°C Tj=150°C VDS(on) ID120A, VGS=18V VDS=1200V, VGS=0V IDSS Drain cutoff current VF Forwad Voltage Min. － － － － － Tj=25°C Tj=125°C Tj=150°C IF=120A － － 1.6 － -0.5 － － － － － － - IRRM Clamp diode Reverse curent Gate-source threshold voltage VGS(th) VDS=10V, ID=22mA VGS=22V, VDS=0V IGSS Gate-source leakage current VGS= -6V, VDS=0V td(on) VGS(on)=18V, VGS(off)=0V tr VDS=600V ID=120A trr Switching characteristics td(off) RG=2.2W inductive load tf Input capacitance Gate Registance Stray Inductance VDS=10V, VGS=0V, 1MHz Tj=25°C Ciss RGint Ls Creepage Distance - Clearance Distance - Terminal to heat sink Terminal to terminal Terminal to heat sink Terminal to terminal Typ. 2.1 3.1 3.4 1.7 2.2 2.4 － － － 30 40 20 165 45 14 1.8 25 12.5 20 10.5 14 － － － DMOS (1/2 module) *5 5 － SBD (1/2 module) * Case to heat sink, per 1 module, Case-to-heat sink Rth(c-f) 0.035 Thermal resistance Thermal grease appied *6 (*5) Measurement of Tc is to be done at the point just beneath the chip. (*6) Typical value is measured by using thermally conductive grease of λ=0.9W/(m・K). Junction-to-case thermal resistance Rth(j-c) Max. 3.2 － 5.2 10 2.1 3.2 2 4 0.5 － － － － － － － 0.16 0.21 Unit V mA V mA V mA ns nF W nH mm mm mm mm °C/W - lWaveform for switching test Eon=Id×Vds Eoff=Id×Vds trr Vsurge VDS 90% ID 2% 90% 10% 10% 2% 2% 10% 2% 90% VGS 10% td(on) www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. td(off) tr 3/10 tf 2016.10 - Rev.A Data Sheet BSM120C12P2C201 lElectrical characteristic curves (Typical) Fig.1 Typical Output Characteristics [ Tj=25ºC ] 240 Fig.2 Drain-Source Voltage vs. Drain Current 8 Tj=25ºC Drain Current : ID [A] Drain-Source Voltage : VDS [V] VGS =18V 180 VGS =18V 7 VGS =16V VGS =20V VGS =14V 120 VGS =12V 60 VGS =10V 0 6 Tj=125ºC 5 Tj=150ºC 4 3 Tj=25ºC 2 1 0 0 2 4 6 8 0 40 Drain-Source Voltage : VDS [V] 5 4 ID=120A ID=100A ID=60A ID=20A 0 12 14 16 18 20 22 24 Static Drain - Source On-State Resistance : RDS(on) [mW] Drain-Source Voltage : VDS [V] Tj=25ºC 1 200 240 0.06 0.05 VGS=12V 0.04 0.03 VGS=14V VGS=16V VGS=18V 0.02 VGS=20V 0.01 ID =120A 0 0 50 100 150 200 250 Junction Temperature : Tj [ºC] Gate-Source Voltage : VGS [V] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 160 Fig.4 Static Drain - Source On-State Resistance vs. Junction Temperature 6 2 120 Drain Current : ID [A] Fig.3 Drain-Source Voltage vs. Gate-Source Voltage [ Tj=25ºC ] 3 80 4/10 2016.10 - Rev.A Data Sheet BSM120C12P2C201 lElectrical characteristic curves (Typical) Fig.5 Forward characteristic of Diode Fig.6 Forward characteristic of Diode 1000 240 Tj=25ºC 200 100 Source Current : Is [A] Source Current : Is [A] Tj=25ºC Tj=150ºC Tj=125ºC 10 160 Tj=150ºC 120 Tj=125ºC 80 40 0 1 0 1 2 3 4 0 5 2 3 4 5 Source-Drain Voltage : VSD [V] Source-Drain Voltage : VSD [V] Fig.8 Drain Current vs. Gate-Source Voltage Fig.7 Drain Current vs. Gate-Source Voltage 240 1.E+03 VDS =20V VDS =20V 1.E+02 Drain Current : ID [A] 200 Drain Current : ID [A] 1 160 Tj=150ºC 120 Tj=125ºC 80 40 Tj=25ºC Tj=150ºC 1.E+01 Tj=125ºC 1.E+00 Tj=25ºC 1.E-01 1.E-02 1.E-03 0 1.E-04 0 5 10 15 0 10 15 Gate-Source Voltage : VGS [V] Gate-Source Voltage : VGS [V] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 5 5/10 2016.10 - Rev.A Data Sheet BSM120C12P2C201 lElectrical characteristic curves (Typical) Fig.9 Switching Characteristics [ Tj=25ºC ] Fig.10 Switching Characteristics [ Tj=125ºC ] 1000 1000 td(off) Switching Time : t [ns] Switching Time : t [ns] td(off) tr 100 tf td(on) 10 VDS =600V VGS(on) =18V VGS(off) =0V RG =2.2W Inductive Load 100 tf td(on) 10 VDS =600V VGS(on) =18V VGS(off) =0V RG =2.2W Inductive Load 1 1 0 100 200 0 300 Drain Current : ID [A] 100 200 300 Drain Current : ID [A] Fig.11 Switching Characteristics [ Tj=150ºC ] Fig.12 Switching Loss vs. Drain Current [ Tj=25ºC ] 8 1000 VDS =600V VGS(on) =18V VGS(off) =0V RG =2.2W Inductive Load 7 td(off) tf 100 td(on) 10 Switching Loss [mJ] 6 Switching Time : t [ns] tr tr VDS =600V VGS(on) =18V VGS(off) =0V RG =2.2W Inductive Load Eon 5 4 Eoff 3 2 1 Err 0 1 0 100 200 0 300 200 300 Drain Current : ID [A] Drain Current : ID [A] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 100 6/10 2016.10 - Rev.A Data Sheet BSM120C12P2C201 lElectrical characteristic curves (Typical) Fig.13 Switching Loss vs. Drain Current [ Tj=125ºC ] Fig.14 Switching Loss vs. Drain Current [ Tj=150ºC ] 8 8 VDS =600V VGS(on) =18V VGS(off) =0V RG =2.2W Inductive Load Switching Loss [mJ] 6 5 VDS =600V VGS(on) =18V VGS(off) =0V RG =2.2W Inductive Load 7 6 Eon Switching Loss [mJ] 7 4 3 Eoff 2 1 Eon 5 4 3 Eoff 2 1 Err Err 0 0 0 100 200 300 0 100 Drain Current : ID [A] 200 300 Drain Current : ID [A] Fig.15 Recovery Characteristics vs. Drain Current [ Tj=25ºC ] 100 Fig.16 Recovery Characteristics vs. Drain Current [ Tj=125ºC ] 10 100 100 1 VDS =600V VGS(on) =18V VGS(off) =0V RG =2.2W Inductive Load 1 0.1 0 100 200 10 10 VDS =600V VGS(on) =18V VGS(off) =0V RG =2.2W Inductive Load 1 300 1 0 Drain Current : ID [A] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. trr Irr Recovery Current : Irr [A] 10 Recovery Time : trr [ns] trr Recovery Current : Irr [A] Recovery Time : trr [ns] Irr 100 200 300 Drain Current : ID [A] 7/10 2016.10 - Rev.A Data Sheet BSM120C12P2C201 lElectrical characteristic curves (Typical) Fig.17 Recovery Characteristics vs. Drain Current [ Tj=150ºC ] 100 Fig.18 Switching Characteristics vs. Gate Resistance [ Tj=25ºC ] 10000 10 VDS =600V ID =120A VGS(on) =18V VGS(off) =0V Inductive Load 10 1 VDS =600V VGS(on) =18V VGS(off) =0V RG =2.2W Inductive Load 1 Switching Time : t [ns] trr Recovery Current : Irr [A] Recovery Time : trr [ns] Irr 1000 tr tf 100 td(on) 10 0.1 0 100 200 1 300 10 100 Gate Resistance : RG [W] Drain Current : ID [A] Fig.20 Switching Characteristics vs. Gate Resistance [ Tj=150ºC ] Fig.19 Switching Characteristics vs. Gate Resistance [ Tj=125ºC ] 10000 10000 VDS =600V ID =120A VGS(on) =18V VGS(off) =0V Inductive Load 1000 VDS =600V ID =120A VGS(on) =18V VGS(off) =0V Inductive Load td(off) Switching Time : t [ns] Switching Time : t [ns] td(off) 1000 tf 100 td(on) tr td(off) tf 100 tr td(on) 10 10 1 10 100 1 Gate Resistance : RG [W] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 10 100 Gate Resistance : RG [W] 8/10 2016.10 - Rev.A Data Sheet BSM120C12P2C201 lElectrical characteristic curves (Typical) Fig.21 Switching Loss vs. Gate Resistance [ Tj=25ºC ] Fig.22 Switching Loss vs. Gate Resistance [ Tj=125ºC ] 30 VDS =600V ID =120A VGS(on) =18V VGS(off) =0V Inductive Load 20 Switching Loss [mJ] Switching Loss [mJ] 30 Eon 10 Eoff VDS =600V ID =120A VGS(on) =18V VGS(off) =0V Inductive Load 20 Eon 10 Eoff Err Err 0 0 1 10 100 1 10 Gate Resistance : RG [W] Gate Resistance : RG [W] Fig.23 Switching Loss vs. Gate Resistance [ Tj=150ºC ] Fig.24 Typical Capacitance vs. Drain-Source Voltage 30 1.E-07 VDS =600V ID =120A VGS(on) =18V VGS(off) =0V Inductive Load 20 Ciss 1.E-08 Capasitance : C [F] Switching Loss [mJ] 100 Eon 10 Eoff Err 10 1.E-11 0.01 100 Gate Resistance : RG [W] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Crss 1.E-10 Tj=25ºC VGS =0V 1MHz 0 1 Coss 1.E-09 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] 9/10 2016.10 - Rev.A Data Sheet BSM120C12P2C201 lElectrical characteristic curves (Typical) Fig.25 Gate Charge Characteristics [ Tj=25ºC ] Gate-Source Voltage : VGS [V] 25 ID =120A Tj=25ºC VDS =600V 20 15 10 5 0 0 200 400 600 800 Normalized Transient Thermal Impedance : Rth Fig.26 Normalized Transient Thermal Impedance Total Gate charge : Qg [nC] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1 0.1 Single Pulse Tc=25ºC Per unit base DMOS part : 0.16K/W SBD part : 0.21K/W 0.01 0.0001 0.001 0.01 0.1 1 10 Time [s] 10/10 2016.10 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. R1102B Datasheet BSM120C12P2C201 - Web Page Part Number Package Unit Quantity Minimum Package Quantity Packing Type Constitution Materials List RoHS BSM120C12P2C201 C 12 12 Tray inquiry Yes