MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS48V2527 2.5 - 2.7GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFS48V2527 is a 60W push-pull type GaAs Power FET especially designed for use in 2.5 - 2.7GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. r r r r Push-pull configuration High output power Pout = 60W (TYP.) @ f=2.5 - 2.7 GHz High power gain GLP = 10 dB (TYP.) @ f=2.5 - 2.7GHz High power added efficiency P.A.E. = 45 % (TYP.) @ f=2.5 - 2.7GHz r r FEATURES r APPLICATION r 2.5-2.7GHz band power amplifier QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS ICVG UQWTEG FTCKP WPKVOO VDS = 12 (V) ID = 4.0 (A) RG=20 (ohm) for each gate ABSOLUTE MAXIMUM RATINGS r r (Ta=25deg.C) < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into Symbol VGDO VGSO PT *1 Tch Tstg Parameter Gate to drain voltage Gate to source voltage Total power dissipation Channel temperature Storage temperature Ratings -20 -10 107.1 175 -65 / +175 Unit V V W deg.C deg.C making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. *1 : Tc=25deg.C ELECTRICAL CHARACTERISTICS Symbol Parameter (Ta=25deg.C) Test conditions Min. VGS(off) Cut-off voltage P2dB Output power at 2dB gain compression GLP Linear power gain ID(RF) VDS = 3V , ID = 17.3mA Limits Typ. Max. Unit -1 - -4 V 47 48 - dBm 9 10 - dB Drain current - 11 15 A P.A.E. Power added efficiency - 45 - % Rth (Ch-C) Thermal resistance - 1.0 1.4 deg.C/W VDS=12V, ID(RF off)=4.0A, f=2.5 - 2.7GHz Channel to Case MITSUBISHI ELECTRIC (1/6) June-'04 MGFS48V2527 OUTPUT POWER & POWER ADDED EFFICIENCY vs. INPUT POWER TEST CONDITIONS : Ids(RFoff)=4A f=2.6GHz 80 50 35 50 30 40 25 30 PAE 30 40 25 30 PAE Pout 35 50 30 40 25 30 PAE 15 10 0 10 0 10 15 20 25 30 35 40 INPUT POWER(dBm) 60 10 0 10 40 20 15 10 70 Vds=10V 20 10 15 45 50 20 20 15 20 25 30 35 40 INPUT POWER(dBm) 35 20 20 10 60 Pout OUTPUT POWER(dBm) Pout 40 45 70 Vds=10V POWER ADDED EFFICIENCY(%) 60 OUTPUT POWER(dBm) 40 45 POWER ADDED EFFICIENCY(%) OUTPUT POWER(dBm) 70 Vds=10V 80 Vds=12V Vds=12V Vds=12V 45 f=2.7GHz 50 80 45 10 15 20 25 30 35 40 INPUT POWER(dBm) POWER ADDED EFFICIENCY(%) f=2.5GHz 50 45 MITSUBISHI ELECTRIC CORPORATION June-'04 (2/6) MGFS48V2527 IMD vs. OUTPUT POWER f=2.5GHz IM3 IM5 28 30 32 34 36 38 40 42 44 46 OUTPUT POWER(2tone)(dBm) -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48 -50 -52 -54 -56 -58 -60 f=2.6GHz IM3 -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48 -50 -52 -54 -56 -58 -60 f=2.7GHz IM3 IMD(dBc) -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48 -50 -52 -54 -56 -58 -60 VDS=12V,ID(RF off)=4.0A 2-tone test , Δf=5MHz IMD(dBc) IMD(dBc) TEST CONDITIONS : IM5 28 30 32 34 36 38 40 42 44 46 OUTPUT POWER(2tone)(dBm) IM5 28 30 32 34 36 38 40 42 44 46 OUTPUT POWER(2tone)(dBm) MITSUBISHI ELECTRIC CORPORATION June-'04 (3/6) MGFS48V2527 TEST CIRCUIT MGFS48V2527 VG C5 VD R1 C7 C11 R3 C13 C14 C15 INPUT C19 C21 C22 C23 C24 C25 C26 C1 C2 C10 C3 C4 C9 C16 C17 C18 C6 C8 C12 R2 VG C1,C2,C3,C4 C5,C6 C7,C8 C9 C10 C11,C12 C13,C14,C15 C16,C17,C18 C19,C20 C21,C22,C23,C24,C25,C26 R1,R2 R3,R4 OUTPUT C20 R4 VD :8pF(GR708) :1000pF(GR40) :20pF(GR40) :1.5pF(GR111) :1pF(GR111) :20pF(GR40) :4.7μF(CM32B475K) :4.7μF(CM32B475K) :1000pF(GR40) :13pF(GR708) :20ohm :51ohm Board material:Tefron thickness=0.6mm Specific dielectric constant=2.6 MITSUBISHI ELECTRIC CORPORATION June-'04 (4/6) MGFS48V2527 TEST CONDITIONS : f=2.0-3.0GHz,VDS=12V,ID=2.0A S11 S22 1.0 S11,S22 Smith Chart Z=50Ω S21,S12 Polar Chart S21 5.0 S12 4.0 3.0 5.0 0.2 2.0 SCALE FOR |S21| 2.0 1.0 0.0 0.5 1.0 2.0 5.0 0 -0.2 0.01 -5.0 0.02 -2.0 -0.5 0.03 -1.0 SCALE FOR|S12| 0.2 0.04 S PARAMETERS (Ta=25deg.C,VDS=12V,ID=2.0A) f (GHz) 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 Mag. 0.343 0.311 0.301 0.318 0.354 0.399 0.452 0.484 0.512 0.529 0.523 0.504 0.460 0.369 0.231 0.074 0.188 0.395 0.569 0.694 0.773 S11 Ang(deg.) 30.9 11.3 -13.6 -37.2 -57.5 -78.1 -94.0 -107.7 -121.8 -134.1 -145.4 -159.0 -171.7 171.2 149.6 85.3 -26.1 -53.1 -72.1 -88.0 -99.3 Mag. 2.394 2.448 2.529 2.575 2.594 2.620 2.597 2.603 2.558 2.569 2.573 2.629 2.665 2.734 2.731 2.623 2.380 2.085 1.730 1.389 1.108 S Parameters (TYP.) S21 S12 Ang(deg.) Mag. Ang(deg.) -124.1 0.042 -112.1 -135.3 0.042 -129.0 -147.0 0.046 -134.8 -159.1 0.042 -148.3 -170.4 0.044 -160.2 176.5 0.045 -167.5 164.9 0.039 176.5 153.3 0.042 164.3 141.8 0.040 161.2 130.9 0.037 147.6 119.6 0.039 135.6 106.5 0.032 121.1 92.9 0.034 100.6 78.3 0.030 78.4 59.9 0.027 58.1 41.6 0.022 31.9 22.2 0.014 -3.2 4.0 0.014 -39.0 -13.8 0.018 -60.5 -28.6 0.016 -111.6 -40.4 0.015 -136.5 Mag. 0.773 0.760 0.746 0.724 0.700 0.690 0.673 0.659 0.655 0.649 0.629 0.636 0.636 0.645 0.666 0.695 0.740 0.781 0.818 0.844 0.862 S22 Ang(deg.) 164.4 163.0 163.3 162.9 163.5 164.1 165.6 166.6 167.8 169.7 170.7 172.5 175.1 177.6 -179.9 -177.4 -177.1 -177.8 -179.5 178.8 176.7 This S-Parameter data show measurements performed on each single-ended FET. MITSUBISHI ELECTRIC CORPORATION June-'04 (5/6) MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS48V2527 2.5 - 2.7GHz BAND 60W GaAs FET MITSUBISHI ELECTRIC (6/6) June-'04