NJSEMI MJE8503 Switchmode series npn silicon power transistor Datasheet

'JiiieuJ tSsmi-danducto'i ^Pioaucti, One..
(.7
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
MJE8502
MJE8503
S.O AMPERE
NPN SILICON
POWER TRANSISTORS
SWITCHMODE SERIES
NPN SILICON POWER TRANSISTORS
700 and BOO VOLTS
8O WATTS
The MJE8502 and MJE8503 transistors are designed for highvoltage, high-speed, power switching in inductive circuits where fall
time is critical. They are particularly suited for line operated switchmode applications such as:
Designer's Data for
"Worst Case" Conditions
Switching Regulators
Inverters
The Designers Data Sheet permits the design of most circuits
entirely from the information presented. Limit data - representing
device characteristics boundaries —
are given to facilitate "worst case"
design.
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Fast Turn-Off Times
1 50 ns Inductive Fall TtmB-26°C (Typl
400 ns Inductive Crossover Tims— 2B°C (Typ)
1200 ns Inductive Storage Time-2S°C (Typ)
Operating Temperature Range —66 to +12BOC
100°C Performance Specified for;
Reverse-Biased SO A with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector. Bmitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak (11
Bale Current — Continuous
Peak Ml
Total Power Oiftipation ® TC * 25°C
@T C •= ioo°c
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
MJE8502
MJE8B03
Unit
VCEOIsus)
700
BOO
Vdc
Vdo
VCEV
Vee
'c
ICM
<B
IBM
PD
1200
1400
8.0
8.0
5,0
10
4.0
8.0
80
21
G.O
10
4.0
8.0
80
21
0.80
-6510*126
0.80
TJ* T«g
Vdc
Ado
Adc
Watt*
W/°C
B| [
°C
THERMAL CHARACTERISTICS
Symbol
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: 1/8" from Case for 6 Seconds
(1) Pulse Test: Pulse Width • 6 ms. Duly Cycle f. 10%.
TL
•.^tafifttHMMfChiHotAiif
1.26
27S
°C
TO-220AB
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before plaeiniz orders.
Ounl.lv
MJE8502, MJE8503
ELECTRICAL CHARACTERISTICS (Tc » 2S°C unless otherwise noted)
E OFF CHARACTERISTICS
Characteristic
Symbol
Collector-Emitter Sustaining Voltage (Table 1)
MJE8502
(IC • 100 mA. IB • 0)
MJE8503
Collector Cutoff Currant
(VcEV " Bated Value. VgEloff I " 1 -5 Vdcl
(VCEV * RotMl Value. VrjEloffl • 1.5 Vdc, TC - 100°C)
Collector Cutoff Current
(V CE - Rated VCEV. «BE -SO I!. Tc =• IOO°C)
Emitter Cutoff Current
(VEB - 7.0 Vdc, lc - 01
VcEO(sus)
\
"""
700
BOO
-
-
-
-
025
5.0
ICER
~
~
'EBO
~
~~
I
Vdc
rnAdc
ICEV
SECOND BREAKDOWN
Second Breakdown Collector Currant with bale forward biased
'sit,
F1DSOA
Clamped Inductive 5OA with Base Reverse Biased
ON CHARACTERISTICS (11
DC Currant Gain
hFE
(1C = 1 .0 Adc, VCE - 5.0 Vdc)
Collector-Emitter Saturation Voltage
VcE(sat)
(1C = 2.5 Adc, IB -1.0 Adc)
(IC • 5.0 Adc, IB • 2.0 Adc)
(IC - 2,5 Adc, IB • 1.0 Adc, TC - 100°Ct
Base-Emitter Saturation Voltage
v BE(sat)
(IC-2.5 Adc, le -1.0 Adc)
dC • 3-5 Adc. IB = 1.0 Adc, TC - 100°C)
DYNAMIC CHARACTERISTICS
Output Capacitance
1
CDD
(VCB- lOVdc, l £ =0, fres, = I.OkHz)
|
SWITCHING CHARACTERISTICS
Resistive Load (Table 1 )
Delay Time
>d
(Vcc = 600 Vdc, lc - 2.5 A,
Rise Time
tr
lB1 - 1-0 A, VBE(off) - 5.0 Vdc, tp - 50 Ma,
Storage Time
's
Duly Cycle •: 2.0%)
Fall Time
If
Inductive Load, C amped (Table 1 )
Storage Time
tsv
(1C • 2.6 A(pk|, Vdamp - 500 Vdc, 101 - 1.0 A.
Crossover Time
VflEloff) ' 5 Vdc, TC - 100°C>
tc
Storage Time
'sv
(1C - 2.5 A(pk|, V0i8mp - 600 Vdc, IBI - 1.0 A,
Crossover Time
<c
VflEloffl " 5 Vdc. TC - 25°C)
Fall Time
<fi
111 Pulse Test: PW • 300ps. Duty Cycle « 2K.
Typ
6.0
mAdc
1.0
mAdc
See Figure 12
See Figure 13
7.5
~~
~
Vdc
-
2.0
5.0
3.0
-
~
1.6
1.6
60
-
300
PF
-
0,040
0.20
PS
0.125
PS
1.2
2.0
4.0
0.66
2.0
PS
1.6
5.0
2.0
PS
-
PS
-
Vdc
—
—
-
0.60
-
0.1S
1.2
0.4
PS
PS
CI
-
PS
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