HMC625HFLP5E v00.0311 Variable Gain Amplifiers - Digital - SMT 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 6 GHz Typical Applications Features The HMC625HFLP5E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection • WiBro / WiMAX / 4G High Output IP3: +33 dBm • Microwave Radio & VSAT TTL/CMOS Compatible Serial, Parallel, or latched Parallel Control • Test Equipment and Sensors ±0.25 dB Typical Gain Step Error • IF & RF Applications Single +5V Supply 32 Lead 5 x 5 mm SMT Package: 25 mm2 Functional Diagram General Description The HMC625HFLP5E is a digitally controlled variable gain amplifier which operates from 0.5 - 6 GHz, and can be programmed to provide anywhere from 13.5 dB attenuation, to 18 dB of gain, in 0.5 dB steps. The HMC625HFLP5E delivers noise figure of 6 dB in its maximum gain state, with output IP3 of up to +33 dBm in any state. The dual mode control interface is CMOS/ TTL compatible, and accepts either a three wire serial input or a 6 bit parallel word. The HMC625HFLP5E also features a user selectable power up state and a serial output port for cascading other Hittite serial controlled components. The HMC625HFLP5E is housed in a RoHS compliant 5 x 5 mm QFN leadless package, and requires no external matching components. Electrical Specifications, TA = +25 °C, 50 Ohm System Vdd = +5V, Vs = +5V Parameter Min. Frequency Range Gain (Maximum Gain State) 13 Gain Control Range Max. Min. Typ. Max. Min. 2700 - 4000 18 11 14 5 Typ. Max. Units 4000 - 6000 MHz 10 dB 31.5 31.5 31.5 dB Input Return Loss 15 12 10 dB Output Return Loss 12 12 14 dB Gain Accuracy: (Referenced to Maximum Gain State) All Gain States ± (0.3 + 3% of relative gain setting) Max ± (0.3 + 3% of relative gain setting) Max ± (0.4 + 5% of relative gain setting) Max dB Output Power for 1 dB Compression Output Third Order Intercept Point (Two-Tone Output Power= 12 dBm Each Tone) Noise Figure (Max Gain State) 16 14 11 Switching Characteristics tRISE, tFall (10 / 90% RF) Supply Current (Amplifier) Supply Current (Controller) Idd 19 33 tON, tOFF (Latch Enable to 10 / 90% RF) 0-1 Typ. 500 - 2700 60 17 29 14 dBm 27 dBm 6 7 8 dB 30 60 30 60 30 60 ns ns 86 0.12 100 0.25 60 86 0.12 100 0.25 60 86 0.12 100 0.25 mA mA For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC625HFLP5E v00.0311 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 6 GHz Normalized Attenuation Maximum Gain vs. Frequency (Only Major States are Shown) 25 GAIN (dB) 20 15 10 +25 C +85 C -40 C 5 0 0.4 -10 -20 2.4 3.4 4.4 5.4 16dB 31.5dB -30 -40 1.4 8dB 6.4 0.4 1.4 2.4 FREQUENCY (GHz) Input Return Loss 5.4 6.4 5.4 6.4 (Only Major States are Shown) 0 0 0dB -10 RETURN LOSS (dB) RETURN LOSS (dB) 4.4 Output Return Loss (Only Major States are Shown) -20 -30 -40 0.4 1.4 2.4 3.4 4.4 5.4 -10 -20 -30 -40 0.4 6.4 1.4 2.4 FREQUENCY (GHz) 3.4 4.4 FREQUENCY (GHz) Bit Error vs. Frequency Bit Error vs. Attenuation State (Only Major States are Shown) 2 1.5 1 1 31.5dB 16dB BIT ERROR (dB) BIT ERROR (dB) 3.4 FREQUENCY (GHz) 0 0.5 GHz 0.5 0.7 GHz Variable Gain Amplifiers - Digital - SMT NORMAILIZED ATTENUATION (dB) 0 5.0 GHz 0 2.0 GHz -0.5 4.0 GHz -1 -1 -2 0.4 1.4 2.4 3.4 4.4 FREQUENCY (GHz) 5.4 6.4 -1.5 0 4 8 12 16 20 24 28 32 ATTENUATION STATE (dB) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 0-2 HMC625HFLP5E v00.0311 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 6 GHz Normal Relative Phase vs. Frequency Step Attenuation vs. Attenuation State, 0.5 - 3.5 GHz (Only Major States are Shown) 1.5 STEP ATTENUATION (dB) RELATIVE PHASE (DEG) 50 31.5dB 40 16dB 30 20 8dB 10 0 -20 0.4 1.4 2.4 3.4 4.4 5.4 0.5 0 -0.5 6.4 0 4 8 FREQUENCY (GHz) Step Attenuation vs. Attenuation State, 4.0 - 6.0 GHz 1 20 P1dB (dBm) 25 0.5 -0.5 4 8 12 16 20 24 28 5 0.4 32 35 10 NOISE FIGURE (dB) 12 IP3 (dBm) 25 +25 C +85 C -40 C 1.4 2.4 3.4 1.4 2.4 3.4 4.4 FREQUENCY (GHz) 5.4 6.4 8 6 4 +25 C +85 C -40 C 2 4.4 32 Noise Figure 40 10 0.4 28 FREQUENCY (GHz) Output IP3 vs. Temperature 15 24 +25 C +85 C -40 C ATTENUATION STATE (dB) 20 20 15 10 4.0 GHz 5.0 GHz 6.0 GHz 0 16 Output P1dB vs. Temperature 1.5 0 12 ATTENUATION STATE (dB) 30 0-3 0.5 GHz 0.7 GHz 2.0 GHz 2.7 GHz 3.5 GHz 1 -10 STEP ATTENUATION (dB) Variable Gain Amplifiers - Digital - SMT 60 5.4 6.4 0 0.4 1.4 2.4 3.4 4.4 5.4 6.4 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC625HFLP5E v00.0311 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 6 GHz The HMC625HFLP5E contains a 3-wire SPI compatible digital interface (SERIN, CLK, LE). It is activated when P/S is kept high. The 6-bit serial word must be loaded MSB first. The positive-edge sensitive CLK and LE requires clean transitions. If mechanical switches were used, sufficient debouncing should be provided. When LE is high, 6-bit data in the serial input register is transferred to the attenuator. When LE is high CLK is masked to prevent data transition during output loading. When P/S is low, 3-wire SPI interface inputs (SERIN, CLK, LE) are disabled and serial input register is loaded asynchronously with parallel digital inputs (D0 - D5). When LE is high, 6-bit parallel data is transferred to the attenuator. For all modes of operations, the DVGA state will stay constant while LE is kept low. Parameter Typ. Min. serial period, tSCK 100 ns Control set-up time, tCS 20 ns Control hold-time, tCH 20 ns LE setup-time, tLN 10 ns Min. LE pulse width, tLEW 10 ns Min LE pulse spacing, tLES 630 ns Serial clock hold-time from LE, tCKN 10 ns Hold Time tPH 0 ns Latch Enable Minimum width, tLEN 10 ns Setup Time, tPS 2 ns Timing Diagram (Latched Parallel Mode) Variable Gain Amplifiers - Digital - SMT Serial Control Interface Parallel Mode (Direct Parallel Mode & Latched Parallel Mode) Note: The parallel mode is enabled when P/S is set to low. Direct Parallel Mode - The attenuation state is changed by the Control Voltage Inputs directly. The LE (Latch Enable) must be at a logic high to control the attenuator in this manner. Latched Parallel Mode - The attenuation state is selected using the Control Voltage Inputs and set while the LE is in the Low state. The attenuator will not change state while LE is Low. Once all Control Voltage Inputs are at the desired states the LE is pulsed. See timing diagram above for reference. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 0-4 HMC625HFLP5E v00.0311 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 6 GHz PUP Truth Table Variable Gain Amplifiers - Digital - SMT Power-Up States If LE is set to logic LOW at power-up, the logic state of PUP1 and PUP2 determines the power-up state of the part per PUP truth table. If the LE is set to logic HIGH at power-up, the logic state of D0-D5 determines the power-up state of the part per truth table. The DVGA latches in the desired power-up state approximately 200 ms after power-up. Power-On Sequence The ideal power-up sequence is: GND, Vdd, digital inputs, RF inputs. The relative order of the digital inputs are not important as long as they are powered after Vdd / GND LE PUP1 PUP2 Gain Relative to Maximum Gain 0 0 0 -31.5 0 1 0 -24 0 0 1 -16 0 1 1 Insertion Loss 1 X X 0 to -31.5 dB Note: The logic state of D0 - D5 determines the powerup state per truth table shown below when LE is high at power-up. Truth Table Absolute Maximum Ratings RF Input Power [1] 11.5 dBm (T = 85 °C) Digital Inputs (LE, SERIN, CLK, P/S, DO-D5, PUP1, PUP2) -0.5 to Vdd +0.5V Controller Bias Voltage (Vdd) 5.6V Amplifier Bias Voltage (Vcc) 5.5V Channel Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 15.1 mW/°C above 85 °C) [1] 0.98 W Thermal Resistance 66.3 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A Control Voltage Input D5 D4 D3 D2 D1 D0 Gain Relative to Maximum Gain High High High High High High 0 dB High High High High High Low -0.5 dB High High High High Low High -1 dB High High High Low High High -2 dB High High Low High High High -4 dB High Low High High High High -8 dB Low High High High High High -16 dB Low Low Low Low Low Low -31.5 dB Any combination of the above states will provide a reduction in gain approximately equal to the sum of the bits selected. [1] At max gain settling Control Voltage Table Bias Voltage Vdd (V) Idd (Typ.) (mA) State Vdd = +3V Vdd = +5V 5V 0.12 Low 0 to 0.5V @ <1 µA 0 to 0.8V @ <1 µA Vs (V) Is (Typ.) (mA) High 2 to 3V @ <1 µA 2 to 5V @ <1 µA 5V 86 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 0-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC625HFLP5E v00.0311 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 6 GHz NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15 mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05 mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05 mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish HMC625HFLP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [1] Package Marking [2] H625HF XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX Pin Descriptions Pin Number Function Description 1 AMPIN This pin is DC coupled. An off chip DC blocking capacitor is required. 29 AMPOUT RF output and DC bias (Vcc) for the output stage of the amplifier. 2, 3, 13, 28, 30 - 32 GND These pins and package bottom must be connected to RF/DC ground. 4, 12 ATTIN, ATTOUT These pins are DC coupled and matched to 50 Ohms. Blocking capacitors are required. Select value based on lowest frequency of operation. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Variable Gain Amplifiers - Digital - SMT Outline Drawing 0-6 HMC625HFLP5E v00.0311 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 6 GHz Pin Descriptions Variable Gain Amplifiers - Digital - SMT Pin Number 0-7 Function Description 5-11 N/C The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 14 SEROUT Serial input data delayed by 6 clock cycles. 15, 16 PUP2, PUP1 18 - 23 D5, D4, D3, D2, D1, D0 24 P/S 25 CLK 26 SERIN 27 LE 17 Vdd Interface Schematic Supply Voltage Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC625HFLP5E v00.0311 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 6 GHz List of Materials for Evaluation PCB 116960 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 18 Pin DC Connector J4 - J6 DC Pin C1 - C9 100 pF Capacitor, 0402 Pkg. C11 - C12 1000 pF Capacitor, 0402 Pkg. C14 2.2 µF Capacitor, CASE A Pkg. R1 - R14 100 kOhm Resistor, 0402 Pkg. R15 1.8 Ohm Resistor, 1206 Pkg. SW1, SW2 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. Variable Gain Amplifiers - Digital - SMT Evaluation PCB SPDT 4 Position DIP Switch L1 24 nH Inductor, 0603 Pkg. U1 HMC625HFLP5E Variable Gain Amplifier PCB [2] 116958 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Arlon 25FR For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 0-8