IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM 14 Ampere Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire Operating Range • High Peak Output Current: 14A Peak • Wide Operating Range: 4.5V to 25V • High Capacitive Load Drive Capability: 15nF in <30ns • Matched Rise And Fall Times • Low Propagation Delay Time • Low Output Impedance • Low Supply Current The IXDI414/IXDN414 is a high speed high current gate driver specifically designed to drive the largest MOSFETs and IGBTs to their minimum switching time and maximum practical frequency limits. The IXDI/N414 can source and sink 14A of peak current while producing voltage rise and fall times of less than 30ns to drive the latest IXYS MOSFETs & IGBTs. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, a patent-pending circuit virtually eliminates transistor cross conduction and current shootthrough. Improved speed and drive capabilities are further enhanced by very low, matched rise and fall times. Applications The IXDN414 is configured as a non-inverting gate driver and the IXDI414 is an inverting gate driver. • • • • • • • • • Driving MOSFETs and IGBTs Motor Controls Line Drivers Pulse Generators Local Power ON/OFF Switch Switch Mode Power Supplies (SMPS) DC to DC Converters Pulse Transformer Driver Class D Switching Amplifiers The IXDN414/IXDI414 family are available in standard 8 pin P-DIP (PI), 5-pin TO-220 (CI, CM) and TO-263 (YI, YM) surface-mount packages. Figure 1 - IXDN414 14A Non-Inverting Gate Driver Functional Block Diagram Vcc Vcc P IN ANTI-CROSS CONDUCTION CIRCUIT * GND OUT N GND * Patent Pending Copyright © IXYS CORPORATION 2001 First Release IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM Figure 2 - IXDI414 Inverting 14A Gate Driver Functional Block Diagram Vcc Vcc P ANTI-CROSS CONDUCTION CIRCUIT * IN OUT N GND GND Pin Description And Configuration SYMBOL FUNCTION VCC Supply Voltage IN Input OUT Output GND Ground 2 IN 3 NC 4 GND I X D X 4 1 4 Vcc OUT GND IN NC 1 2 3 4 VCC 8 OUT 7 OUT 6 5 GND 5 IX D X 4 1 4 Y I IX D X 4 1 4 C I 1 VCC DESCRIPTION Positive power-supply voltage input. This pin provides power to the entire chip. The range for this voltage is from 4.5V to 25V. Input signal-TTL or CMOS compatible. Driver Output. For application purposes, this pin is connected via an external resistor to a Gate of a MOSFET/IGBT. The system ground pin. Internally connected to all circuitry, this pin provides ground reference for the entire chip. This pin should be connected to a low noise analog ground plane for optimum performance. TO220 (CI, CM) TO263 (YI, YM) 8 PIN DIP (PI) ORDERING INFORMATION Part Number Package Type Temp. Range Configuration IXDN414PI 8-Pin PDIP -40°C to +85°C IXDN414CI 5-Pin TO-220 IXDN414CM 5-Pin TO-220 -55°C to +125°C Non Inverting IXDN414YI 5-Pin TO-263 -40°C to +85°C IXDN414YM 5-Pin TO-263 -55°C to +125°C IXDI414PI 8-Pin PDIP -40°C to +85°C IXDI414CI 5-Pin TO-220 IXDI414CM 5-Pin TO-220 -55°C to +125°C Inverting IXDI414YI 5-Pin TO-263 -40°C to +85°C IXDI414YM 5-Pin TO-263 -55°C to +125°C NOTE: Mounting or solder tabs on all packages are connected to ground * Patent Pending 2 IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM Absolute Maximum Ratings (Note 1) Parameter Supply Voltage Operating Ratings Parameter Maximum Junction Temperature Value 25V -0.3V to V CC + 0.3V All Other Pins Operating Temperature Range -40oC to 85oC Thermal Impedance (Junction To Case) TO220 (CI, CM), 0.55oC/W TO263 (YI, YM) (θJC) Power Dissipation T CASE ≤85 o C: TO220 (CI), TO263 (YI) T CASE ≤125 o C: TO220 (CM), TO263 (YM) Value 150oC 16W 16W Power Dissipation, T AMBIENT ≤25 o C 8 Pin PDIP (PI) TO220 (CI, CM), TO263 (YI, YM) 975mW 2W Derating Factors (to Ambient) 8 Pin PDIP (PI) TO220 (CI, CM), TO263 (YI, YM) Storage Temperature Soldering Lead Temperature (10 seconds maximum) 7.6mW / o C 0.1W /o C -65 o C to 150 o C 300 o C Electrical Characteristics Unless otherwise noted, TA = 25 oC, 4.5V ≤ VCC ≤ 25V . All voltage measurements with respect to GND. Device configured as described in Test Conditions. Symbol Parameter VIH High input voltage VIL Low input voltage VIN Input voltage range IIN Input current VOH High output voltage VOL Low output voltage ROH Output resistance @ Output high Output resistance @ Output Low Peak output current IOUT = 10mA, VCC = 18V Continuous output current (1) Rise time 8 Pin Dip (PI) (Limited by pkg power dissipation) TO220 (CI), TO263 (YI) CL=15nF Vcc=18V ROL IPEAK IDC tR (1) Test Conditions Min Typ Max 3.5 0V ≤ VIN ≤ VCC Units V 0.8 V -5 VCC + 0.3 V -10 10 µA VCC - 0.025 V 0.025 V 600 1000 mΩ IOUT = 10mA, VCC = 18V 600 1000 mΩ VCC is 18V 14 A 22 3 4 27 A A ns CL=15nF Vcc=18V 20 25 ns tF Fall time tONDLY CL=15nF Vcc=18V 30 33 ns CL=15nF Vcc=18V 31 34 ns VCC On-time propagation (1) delay Off-time propagation (1) delay Power supply voltage 18 25 V ICC Power supply current VIN = 3.5V VIN = 0V VIN = + VCC 1 0 3 10 10 mA µA µA tOFFDLY (1) 4.5 See Figures 3a and 3b Note 1: Operating the device beyond parameters with listed “Absolute Maximum Ratings” may cause permanent damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and assembling this component. Specifications subject to change without notice 3 IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM Figure 3a - Characteristics Test Diagram 5.0V Vcc 10uF 25V 0V 0V IXDI414 Vcc 0V IXDN414 15nF Agilent 1147A Current Probe Figure 3b - Timing Diagrams Non-Inverting (IXDN414) Timing Diagram 5V 90% INPUT 2.5V 10% 0V PW MIN tONDLY tOFFDLY tR tF Vcc 90% OUTPUT 10% 0V Inverting (IXDI414) Timing Diagram 5V 90% INPUT 2.5V 10% 0V PWMIN tONDLY tF VCC 90% OUTPUT 10% 0V 4 tOFFDLY tR IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM Typical Performance Characteristics Fig. 4 Rise Time vs. Supply Voltage Fig. 5 40 40 30 30 Fall Time vs. Supply Voltage Fall Time (ns) Rise Time (ns) CL=15,000 pF CL=15,000 pF 20 20 7,500 pF 10 3,600 pF 10 7,500 pF 3,600 pF 0 0 8 10 12 14 16 8 18 10 12 Fig. 6 14 16 18 Supply Voltage (V) Supply Voltage (V) Rise And Fall Times vs. Case Temperature CL = 15 nF, Vcc = 18V Rise Time vs. Load Capacitance Fig. 7 40 50 35 8V 40 30 12V Rise Time (ns) 25 Time (ns) 10V tR tF 20 15 30 18V 14V 16V 20 10 10 5 0 -40 -20 0 20 40 60 80 100 0 0k 120 10k 15k 20k Load Capacitance (pF) Temperature (°C) Fig. 8 5k Fig. 9 Fall Time vs. Load Capacitance Max / Min Input vs. Case Temperature VCC=18V CL=15nF 3.2 40 3.0 Fall Time (ns) Minimum Input High 2.8 10V Max / Min Input (V) 14V 12V 30 8V 16V18V 20 2.6 2.4 2.2 Maximum Input Low 2.0 10 1.8 0 0k 1.6 -60 5k 10k 15k 20k -40 -20 0 20 40 o Temperature ( C) Load Capacitance (pF) 5 60 80 100 IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM Fig. 11 Fig. 12 Supply Current vs. Load Capacitance Vcc=18V Supply Current vs. Frequency Vcc=18V 1000 1000 100 100 2 MHz Supply Current (mA) Supply Current (mA) CL= 30 nF 15 nF 1 MHz 500 kHz 10 100 kHz 5000 pF 10 2000 pF 1 50 kHz 1 1k 0.1 10k 10 100k Fig. 13 100 1000 10000 Frequency (kHz) Load Capacitance (pF) Supply Current vs. Load Capacitance Vcc=12V Supply Current vs. Frequency Vcc=12V Fig. 14 1000 1000 CL = 30 nF 100 Supply Current (mA) Supply Current (mA) 100 2 MHz 1 MHz 500 kHz 10 15 nF 5000 pF 10 2000 pF 1 100 kHz 50 kHz 1 1k 0.1 10k 10 100k Fig. 15 Supply Current vs. Load Capacitance Vcc=8V 1000 10000 Supply Current vs. Frequency Vcc=8V Fig. 16 1000 1000 CL= 30 nF 100 100 Supply Current (mA) Supply Current (mA) 100 Frequency (kHz) Load Capacitance (pF) 2 MHz 1 MHz 10 500 kHz 15 nF 10 5000 pF 2000 pF 1 100 kHz 1 50 kHz 1k 0.1 10k 10 100k 100 Frequency (kHz) Load Capacitance (pF) 6 1000 10000 IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM Fig. 17 50 50 tOFFDLY Propagation Delay vs. Input Voltage CL=15nF VCC=15V 40 Propagation Delay (ns) 40 Propagation Delay (ns) Fig. 18 Propagation Delay vs. Supply Voltage CL=15nF VIN=5V@1kHz tONDLY 30 20 tONDLY 30 tOFFDLY 20 10 10 0 0 8 10 12 14 16 2 18 4 Propagation Delay vs. Case Temperature CL = 2500pF, VCC = 18V Fig. 19 6 8 10 12 Input Voltage (V) Supply Voltage (V) Fig. 20 Quiescent Supply Current vs. Case Temperature VCC=18V VIN=5V@1kHz 0.60 50 45 Quiescent Supply Current (mA) 35 Time (ns) 0.58 tONDLY 40 tOFFDLY 30 25 20 15 0.56 0.54 0.52 0.50 10 -40 -20 0 20 40 60 80 100 -40 120 -20 20 40 60 80 Temperature (oC) Temperature (°C) Fig. 21 P Channel Output Current vs. Case Temperature VCC=18V CL=.1uF Fig. 22 N Channel Output Current vs. Case Temperature VCC=18V CL=.1uF 16 17 15 N Channel Output Current (A) P Channel Output Current (A) 0 14 13 16 15 14 12 -40 -20 0 20 40 60 80 -40 100 -20 0 20 40 Temperature (oC) o Temperature ( C) 7 60 80 100 IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM Fig. 23 Fig. 24 Enable Threshold vs. Supply Voltage 14 High State Output Resistance (Ohm) 1.0 12 Enable Threshold (V) High State Output Resistance vs. Supply Voltage 10 8 6 4 2 0.8 0.6 0.4 0.2 0.0 0 8 10 12 14 16 18 20 22 24 10 8 26 Supply Voltage (V) Low-State Output Resistance vs. Supply Voltage Fig. 25 15 20 25 Supply Voltage (V) VCC vs. P Channel Output Current CL=.1uF VIN=0-5V@1kHz Fig. 26 1.0 0 -4 0.8 P Channel Output Current (A) Low-State Output Resistance (Ohms) -2 0.6 0.4 0.2 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 0.0 8 10 15 20 25 8 Supply Voltage (V) Fig. 27 Vcc vs. N Channel Output Current CL=.1uF VIN=0-5V@1kHz 22 N Channel Output Current (A) 20 18 16 14 12 10 8 6 4 2 0 10 15 15 20 Vcc 24 8 10 20 25 Vcc 8 25 IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM Supply Bypassing, Grounding Practices and Output Lead inductance When designing a circuit to drive a high speed MOSFET utilizing the IXDN414/IXDI414, it is very important to observe certain design criteria in order to optimize performance of the driver. Particular attention needs to be paid to Supply Bypassing, Grounding, and minimizing the Output Lead Inductance. GROUNDING In order for the design to turn the load off properly, the IXDN414 must be able to drain this 5A of current into an adequate grounding system. There are three paths for returning current that need to be considered: Path #1 is between the IXDN414 and its load. Path #2 is between the IXDN414 and its power supply. Path #3 is between the IXDN414 and whatever logic is driving it. All three of these paths should be as low in resistance and inductance as possible, and thus as short as practical. In addition, every effort should be made to keep these three ground paths distinctly separate. Otherwise, the returning ground current from the load may develop a voltage that would have a detrimental effect on the logic line driving the IXDN414. Say, for example, we are using the IXDN414 to charge a 5000pF capacitive load from 0 to 25 volts in 25ns. Using the formula: I= ∆V C / ∆t, where ∆V=25V C=5000pF & ∆t=25ns we can determine that to charge 5000pF to 25 volts in 25ns will take a constant current of 5A. (In reality, the charging current won’t be constant, and will peak somewhere around 8A). OUTPUT LEAD INDUCTANCE Of equal importance to Supply Bypassing and Grounding are issues related to the Output Lead Inductance. Every effort should be made to keep the leads between the driver and it’s load as short and wide as possible. If the driver must be placed farther than 2” (5mm) from the load, then the output leads should be treated as transmission lines. In this case, a twisted-pair should be considered, and the return line of each twisted pair should be placed as close as possible to the ground pin of the driver, and connected directly to the ground terminal of the load. SUPPLY BYPASSING In order for our design to turn the load on properly, the IXDN414 must be able to draw this 5A of current from the power supply in the 25ns. This means that there must be very low impedance between the driver and the power supply. The most common method of achieving this low impedance is to bypass the power supply at the driver with a capacitance value that is a magnitude larger than the load capacitance. Usually, this would be achieved by placing two different types of bypassing capacitors, with complementary impedance curves, very close to the driver itself. (These capacitors should be carefully selected, low inductance, low resistance, high-pulse currentservice capacitors). Lead lengths may radiate at high frequency due to inductance, so care should be taken to keep the lengths of the leads between these bypass capacitors and the IXDN414 to an absolute minimum. 9 IXDN414PI / N414CI / N414CM / N414YI / N414YM IXDI414PI / I414CI / I414CM / I414YI / I414YM IXYS Corporation 3540 Bassett St; Santa Clara, CA 95054 Tel: 408-982-0700; Fax: 408-496-0670 e-mail: [email protected] www.ixys.com IXYS Semiconductor GmbH Edisonstrasse15 ; D-68623; Lampertheim Tel: +49-6206-503-0; Fax: +49-6206-503627 e-mail: [email protected] Directed Energy, Inc. An IXYS Company 2401 Research Blvd. Ste. 108, Ft. Collins, CO 80526 Tel: 970-493-1901; Fax: 970-493-1903 e-mail: [email protected] www.directedenergy.com 10 Doc #9200-0244 R1