BZW06 SERIES Taiwan Semiconductor CREAT BY ART 600W, 13V - 376V Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 1000 μs waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional and 5.0ns for bidirectional - Typical IR less than 1μA above 10V - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition DO-204AC (DO-15) MECHANICAL DATA Case: DO-204AC (DO-15) Molding compound, UL flammability classification rating 94V-0 Part No. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Pure tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Weight: 0.4g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak power dissipation at TA=25°C, Tp=1ms (Note 1) PPK 600 Watts Steady state power dissipation at TL=75°C lead lengths .375", 9.5mm PD 1.7 Watts Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A Junction to leads RθJL 60 Junction to ambient on printed circuit L lead=10mm RθJA 100 TJ - 55 to +175 °C TSTG - 55 to +175 °C Operating junction temperature range Storage temperature range °C/W Note 1: Non-repetitive Current Pulse, Per Fig. 3 ORDERING INFORMATION PART NO. PART NO. BZW06-xxx (Note 1) SUFFIX PACKING CODE PACING CODE SUFFIX A0 H R0 G B0 PACKAGE PACKING DO-15 1,500 / Ammo box DO-15 3,500 / 13" Paper reel DO-15 1,000 / Bulk packing Note 1: "xxx" defines voltage from 12.8V (BZW06-13) to 376V (BZW06-376) EXAMPLE PREFERRED PART NO. BZW06-20HA0G PART NO. BZW06-20 Document Number: DS_D1409028 PART NO. SUFFIX H PACKING CODE A0 PACING CODE SUFFIX G DESCRIPTION AEC-Q101 qualified Green compound Version: I15 BZW06 SERIES Taiwan Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) FIG. 1 PEAK PULSE POWER RATING CURVE FIG.2 PULSE DERATING CURVE 120 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3 10000 PEAK PULSE POWER(PPP) OR CURRENT (IPP) A DERATING IN PERCENTAGE (%) PPPM, PEAK PULSE POWER, W 100000 1000 100 10 0.001 0.01 0.1 1 10 100 80 60 40 20 0 0 100 20 40 1000 PULSE WIDTH(td) is DEFINED as the POINT WHERE the PEAK CURRENT DECAYS to 50% OF IPPM 100 120 140 160 180 200 (oC) BWZ06-376 BWZ06-188 Peak Value IPPM Half Value-IPPM/2 80 10/1000μs, WAVEFORM as DEFINED by R.E.A. 100 60 40 20 td 0 0 0.5 1 1.5 2 2.5 3 3.5 4 t, TIME ms VCL, CLAMPING VOLTAGE(V) PEAK PULSE CURRENT (%) 120 100 FIG. 4 CLAMPING VOLTAGE CURVE FIG. 3 CLAMPING POWER PULSE WAVEFORM tr=10μs 80 TA, AMBIENT TEMPERATURE tp, PULSE WIDTH, (ms) 140 60 BWZ06-58 BWZ06-33 BWZ06-19 BWZ06-10 10 BWZ06-5V8 tp=20μs tp=1ms tp=10ms 1 FIG. 5 TYPICAL JUNCTION CAPACITANCE 0 CJ, JUNCTION CAPACITANCE (pF) A 10000 1 10 100 Ipp, PEAK PULSE CURRENT(A) 1000 BZW06-13 1000 BZW06-58 100 f=1.0MHz Vsig=50mVp-p BZW06-171 10 1 10 100 1000 V(BR), BREAKDOWN VOLTAGE (V) Document Number: DS_D1409028 Version: I15 BZW06 SERIES Taiwan Semiconductor CREAT BY ART FIG. 6 TYPICAL JUNCTION CAPACITANCE FIG.7 TYPICAL FORWARD CHARACTERISTICS UNDIRECTIONAL TYPE 10000 INSTANTANEOUS FORWARD CURRENT(A) CJ, JUNCTION CAPACITANCE (pF) A 100 BZW06-13B 1000 BZW06-58B 100 f=1.0MHz Vsig=50mVp-p BZW06-171B 10 1 10 100 10 25°C 150°C 1 1000 0.0 V(BR), BREAKDOWN VOLTAGE (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 FORWARD VOLTAGE(V) FIG. 8 TYPICAL TRANSIENT THERMAL CHARACTERISTICS FIG. 9 RELATIVE VARIATION OF LEAKAGE CURRENT vs JUNCTION TEMPERATURE 100 10000 VR=VRM IR(TJ) / IR(TJ=25oC) TRANSIENT THERMAL IMPEDANCE(oC/W) 1000 10 100 10 1 1 0.01 0.1 1 10 T, PULSE DURATION (s) Document Number: DS_D1409028 100 1000 0.1 0 25 50 75 100 125 150 TJ (oC) Version: I15 BZW06 SERIES Taiwan Semiconductor CREAT BY ART Breakdown Test Voltage Device Current Clamping Voltage Clamping Voltage Maximum Leakage @IPPM @IPPM Temperature @ VWM (10/1000 μs) (8/20 μs) Coefficient Stand-Off Reverse Voltage (Note 1) VBR IT VWM ID Vc IPPM Vc IPPM VBR V mA V μA V A V A Max Max %/oC (Note 2) Unidirectional Bidirectional Min Nom Max Max BZW06-13 BZW06-13B 14.3 15 15.8 1 12.8 5 21.2 28.0 27.2 147 0.084 BZW06-15 BZW06-15B 17.1 18 18.9 1 15.3 1 25.2 24.0 32.5 123 0.088 BZW06-19 BZW06-19B 20.9 22 23.1 1 18.8 1 30.6 19.6 39.3 102 0.092 BZW06-20 BZW06-20B 22.8 24 25.2 1 20.5 1 33.2 28.0 42.8 93 0.094 BZW06-23 BZW06-23B 25.7 27 28.4 1 23.1 1 37.5 16.0 48.3 83 0.096 BZW06-26 BZW06-26B 28.5 30 31.5 1 25.6 1 41.5 14.5 53.5 75 0.097 BZW06-28 BZW06-28B 31.4 33 34.7 1 28.2 1 45.7 13.1 59.0 68 0.098 BZW06-31 BZW06-31B 34.2 36 37.8 1 30.8 1 49.9 12.0 64.3 62 0.099 BZW06-33 BZW06-33B 37.1 39 47.0 1 33.3 1 53.9 11.1 69.7 57 0.100 BZW06-37 BZW06-37B 40.9 43 45.2 1 36.8 1 59.3 10.1 75.0 52 0.101 BZW06-40 BZW06-40B 44.7 47 49.4 1 40.2 1 64.8 9.3 84.0 48 0.101 BZW06-48 BZW06-48B 53.2 56 58.8 1 47.8 1 77.0 7.8 100 40 0.103 BZW06-58 BZW06-58B 64.6 68 71.4 1 58.1 1 92.0 6.5 121 33 0.104 BZW06-70 BZW06-70B 77.9 82 86.1 1 70.1 1 113 5.3 146 27 0.105 BZW06-85 BZW06-85B 95 100 105 1 85.5 1 137 4.4 178 23 0.106 BZW06-102 BZW06-102B 114 120 126 1 102 1 165 3.6 212 19 0.107 BZW06-128 BZW06-128B 143 150 158 1 128 1 207 2.9 265 15 0.108 BZW06-154 BZW06-154B 171 180 189 1 154 1 246 2.4 317 13 0.108 BZW06-171 BZW06-171B 190 200 210 1 171 1 274 2.2 353 11 0.108 BZW06-188 BZW06-188B 209 220 231 1 188 1 301 2.0 388 10.3 0.108 BZW06-213 BZW06-213B 237 250 263 1 213 1 344 2.0 442 9.0 0.110 BZW06-256 BZW06-256B 285 300 315 1 256 1 414 1.6 529 7.6 0.110 BZW06-273 BZW06-273B 304 320.0 336 1 273 1 438 1.6 564 7.1 0.110 BZW06-299 BZW06-299B 332 350.0 368 1 299 1 482 1.6 618 6.5 0.110 BZW06-342 BZW06-342B 380 400 420 1 342 1 548 1.3 706 5.7 0.110 BZW06-376 BZW06-376B 418 440 462 1 376 1 603 1.3 776 5.7 0.110 Notes: 1. Pulse test：tp<50ms 2. ΔVBR = αT*(Tamb - 25) * VBR(25°C) 3. VR=0V, F=1MHz, For bidirectional types, capacitance value is divided by 2. Document Number: DS_D1409028 Version: I15 BZW06 SERIES Taiwan Semiconductor CREAT BY ART PACKAGE OUTLINE DIMENSIONS DO-204AC (DO-15) DIM. Unit (mm) Unit (inch) Min Max Min Max A 2.60 3.60 0.102 0.142 B 0.70 0.90 0.028 0.035 C 25.40 - 1.000 - D 5.80 7.60 0.228 0.299 E 25.40 - 1.000 - MARKING DIAGRAM P/N = Specific Device Code G= Green Compound YWW = Date Code F= Document Number: DS_D1409028 Factory Code Version: I15 BZW06 SERIES Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1409028 Version: I15