PD-94363C IRF6602/IRF6602TR1 HEXFET® Power MOSFET l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters VDSS RDS(on) max Qg 20V 13mΩ@VGS = 10V 19mΩ@VGS = 4.5V 12nC l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques MQ DirectFET ISOMETRIC Applicable DirectFET Package/Layout Pad (see p.9, 10 for details) SQ SX MQ ST MX MT Description The IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6602 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6602 has been optimized for parameters that are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket. Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 20 V VGS ±20 ID @ TC = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 11 ID @ TA = 70°C 8.9 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Power Dissipation 2.3 PD @TA = 70°C Power Dissipation PD @TC = 25°C Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range g g 48 c A 89 W 1.5 42 0.018 -40 to + 150 W/°C °C Thermal Resistance Parameter RθJA Junction-to-Ambient f g h RθJA Junction-to-Ambient RθJA Junction-to-Ambient RθJC Junction-to-Case RθJ-PCB Junction-to-PCB Mounted i Typ. Max. ––– 55 12.5 ––– 20 ––– ––– 3.0 1.0 ––– Units °C/W Notes through are on page 11 www.irf.com 1 3/1/04 IRF6602/IRF6602TR1 Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ Min. Typ. Max. Units 20 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 22 10 ––– 13 mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 11A VGS(th) ∆VGS(th) Gate Threshold Voltage ––– 1.0 14 2.0 19 2.3 VGS = 4.5V, ID = 8.8A VDS = VGS, ID = 250µA Gate Threshold Voltage Coefficient ––– ––– -4.4 ––– ––– 100 mV/°C IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– 20 125 µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 200 -200 nA VGS = 20V VGS = -20V gfs Qg Forward Transconductance Total Gate Charge 20 ––– ––– 12 ––– 18 S VDS = 10V, ID = 8.8A Qgs1 Qgs2 Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge ––– ––– 3.5 1.3 ––– ––– nC VDS = 10V VGS = 4.5V Qgd Qgodr Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– 4.2 3.0 ––– ––– Output Charge ––– ––– 5.5 19 ––– ––– RG td(on) Gate Resistance Turn-On Delay Time ––– ––– 2.8 33 4.2 ––– tr td(off) Rise Time Turn-Off Delay Time ––– ––– 6.0 14 ––– ––– tf Ciss Fall Time Input Capacitance ––– ––– 12 1420 ––– ––– Coss Crss Output Capacitance Reverse Transfer Capacitance ––– ––– 960 100 ––– ––– RDS(on) Qsw Qoss V Conditions Drain-to-Source Breakdown Voltage VGS = 0V, ID = 250µA e e V VDS = 20V, VGS = 0V ID = 8.8A See Fig. 16 nC Ω VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ns e ID = 8.8A Clamped Inductive Load VGS = 0V pF VDS = 10V ƒ = 1.0MHz Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current EAR Repetitive Avalanche Energy c d c Typ. ––– ––– Max. 97 8.8 Units mJ A ––– 4.2 mJ Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 48 ISM (Body Diode) Pulsed Source Current ––– ––– 380 VSD (Body Diode) Diode Forward Voltage ––– 0.83 1.2 V trr Reverse Recovery Time ––– 42 62 ns Qrr Reverse Recovery Charge ––– 51 77 nC 2 c Conditions MOSFET symbol A D showing the integral reverse G S p-n junction diode. TJ = 25°C, IS = 8.8A, VGS = 0V e TJ = 25°C, IF = 8.8A di/dt = 100A/µs e www.irf.com IRF6602/IRF6602TR1 1000 1000 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V VGS 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V 100 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 2.7V 100 2.7V 10 20µs PULSE WIDTH Tj = 150°C 20µs PULSE WIDTH Tj = 25°C 1 1 0.1 1 10 100 0.1 1 VDS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 100.00 2.0 T J = 25°C 10.00 VDS = 15V 20µs PULSE WIDTH 2.5 3.0 3.5 4.0 4.5 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 5.0 I D = 11A 1.5 (Normalized) R DS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (Α) T J = 150°C 2.0 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1.00 10 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 TJ , Junction Temperature 80 100 120 140 160 ( ° C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF6602/IRF6602TR1 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 10000 1000 Ciss Coss 100 Crss 10 6.0 ID= 8.8A VGS , Gate-to-Source Voltage (V) 100000 VDS= 16V VDS= 10V 5.0 4.0 3.0 2.0 1.0 0.0 1 10 100 0 5 VDS, Drain-to-Source Voltage (V) 15 Q G Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 ID, Drain-to-Source Current (A) I SD , Reverse Drain Current (A) 10 TJ = 150 ° C OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 T J= 25 ° C 1 100µsec 10 1msec 10msec 1 Tc = 25°C Tj = 150°C Single Pulse V GS = 0 V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 V SD,Source-to-Drain Voltage (V) 1.4 0.1 0 1 10 100 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area www.irf.com IRF6602/IRF6602TR1 3.0 VGS(th) Gate threshold Voltage (V) 12 I D , Drain Current (A) 9 6 3 2.5 2.0 ID = 250µA 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) TA, Ambient Temperature (°C) Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10. Threshold Voltage Vs. Temperature (Z thJA ) 100 D = 0.50 0.20 10 Thermal Response 0.10 0.05 P DM 0.02 1 t1 0.01 t2 Notes: SINGLE PULSE (THERMAL RESPONSE) 1. Duty factor D = 2. Peak T 0.1 0.00001 0.0001 0.001 0.01 0.1 t1/ t 2 J = P DM x Z thJA 1 +T A 10 100 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF6602/IRF6602TR1 15V 250 ID 3.9A 7.0A 8.8A TOP DRIVER D.U.T RG + V - DD IAS VGS 20V 200 A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) L VDS BOTTOM 150 100 50 0 25 50 75 100 125 150 ( ° C) Starting Tj, Junction Temperature Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS LD VDS Fig 12b. Unclamped Inductive Waveforms + VDD D.U.T Current Regulator Same Type as D.U.T. VGS Pulse Width < 1µs Duty Factor < 0.1% 50KΩ 12V .2µF Fig 14a. Switching Time Test Circuit .3µF D.U.T. + V - DS VDS 90% VGS 3mA 10% IG ID VGS Current Sampling Resistors td(on) Fig 13. Gate Charge Test Circuit 6 tr td(off) tf Fig 14b. Switching Time Waveforms www.irf.com IRF6602/IRF6602TR1 D.U.T Driver Gate Drive + + - - D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period * • • • • D= VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer RG Period P.W. + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge Waveform www.irf.com 7 IRF6602/IRF6602TR1 Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Synchronous FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. The power loss equation for Q2 is approximated by; * Ploss = Pconduction + Pdrive + Poutput ( 2 Ploss = Irms × Rds(on) ) Power losses in the control switch Q1 are given by; + (Qg × Vg × f ) Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput Q + oss × Vin × f + (Qrr × Vin × f ) 2 This can be expanded and approximated by; Ploss = (Irms 2 × Rds(on ) ) Qgs2 Qgd +I × × Vin × f + I × × Vin × f ig ig + (Qg × Vg × f ) + Qoss × Vin × f 2 This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitances Cds and Cdg when multiplied by the power supply input buss voltage. *dissipated primarily in Q1. For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potential for Cdv/dt turn on. Figure A: Qoss Characteristic 8 www.irf.com IRF6602/IRF6602TR1 DirectFET Outline Dimension, MQ Outline (Medium Size Can, Q-Designation) Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. NOTE: CONTROLLING DIMENSIONS ARE IN MM www.irf.com DIMENSIONS IMPERIAL METRIC MAX MIN CODE MIN MAX 6.35 0.246 A 6.25 0.250 5.05 0.189 B 4.80 0.199 3.95 0.152 C 3.85 0.156 0.45 0.014 D 0.35 0.018 0.72 0.027 E 0.68 0.028 0.72 0.027 F 0.68 0.028 0.73 0.027 G 0.69 0.029 0.61 0.022 H 0.57 0.024 0.27 0.009 J 0.23 0.011 1.70 0.062 K 1.57 0.067 3.12 0.116 L 2.95 0.123 0.70 0.023 M 0.59 0.028 0.08 0.001 N 0.03 0.003 9 IRF6602/IRF6602TR1 DirectFET Board Footprint, MQ Outline (Medium Size Can, Q-Designation) Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET Tape and Reel Dimension (Showing Component Orientation) NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6602). For 1000 parts on 7" reel, order IRF6602TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL METRIC METRIC IMPERIAL MAX MIN CODE MIN MAX MAX MAX MIN MIN N.C 6.9 A 12.992 N.C 330.0 177.77 N.C N.C 0.75 0.795 N.C B 20.2 19.06 N.C N.C N.C 0.50 0.53 C 0.504 13.2 12.8 12.8 13.5 0.520 0.059 D 0.059 N.C 1.5 1.5 N.C N.C N.C 2.31 E 3.937 N.C 100.0 58.72 N.C N.C N.C N.C F N.C 0.53 N.C N.C 0.724 18.4 13.50 0.47 G 0.488 N.C 12.4 11.9 14.4 12.01 0.567 H 0.47 0.469 N.C 11.9 11.9 0.606 15.4 12.01 10 www.irf.com IRF6602/IRF6602TR1 DirectFET Part Marking Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 2.5mH RG = 25Ω, IAS = 8.8A. (See Figure 14). Pulse width ≤ 400µs; duty cycle ≤ 2%. Surface mounted on 1 in. square Cu board. Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. TC measured with thermal couple mounted to top (Drain) of part. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 03/04 www.irf.com 11