Toshiba MIG100J201HC High power switching applications motor control application Datasheet

MIG100J201HC
TOSHIBA Power Module Silicon N Channel IGBT
MIG100J201HC
High Power Switching Applications
Motor Control Applications
l Integrates inverter, brake power circuits & control circuits (IGBT drive units, protection units
for over-current, under-voltage & over-temperature) in one package.
l The electrodes are isolated from case.
l High speed type IGBT : VCE (sat) = 2.8 V (Max.)
toff = 3.0 µs (Max.)
trr = 0.30 µs (Max.)
l Outline : TOSHIBA 2-110A1A
l Weight : 520 g
Equivalent Circuit
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MIG100J201HC
Maximum Ratings (Tj = 25°C)
Stage
Characteristic
Condition
Supply voltage
P-N power terminal
Collector-emitter voltage
―
Collector current
Inverter
VCC
450
V
VCES
600
V
IC
100
A
Tc = 25°C, DC
IF
100
A
Collector power dissipation
Tc = 25°C
PC
300
W
Tj
150
°C
VCC
450
V
VCES
600
V
―
P-N power terminal
Collector-emitter voltage
―
Collector current
Tc = 25°C, DC
IC
30
A
Reverse voltage
―
VR
600
V
Forward current
Tc = 25°C, DC
IF
30
A
Collector power dissipation
Tc = 25°C
PC
80
W
Tj
150
°C
Junction temperature
Module
Unit
Forward current
Supply voltage
Control
Ratings
Tc = 25°C, DC
Junction temperature
Brake
Symbol
―
Control supply voltage
VD-GND terminal
VD
20
V
Input voltage
IN-GND terminal
VIN
20
V
Fault output voltage
FO-GND (L) terminal
VFO
20
V
Fault output current
FO sink current
IFO
14
mA
Operating temperature
―
TC
−20 ~ +100
°C
Storage temperature range
―
Tstg
−40 ~ +125
°C
VISO
2500
V
―
3
N·m
Isolation voltage
AC 1 minute
Screw torque
M5
Electrical Characteristics (Tj = 25°C)
a.
Inverter Stage
Characteristic
Collector cut-off current
Collector-emitter
saturation voltage
Forward voltage
Symbol
ICEX
VCE (sat)
VF
ton
Switching time
toff
tf
Test Condition
Min
Typ.
Max
Tj = 25°C
―
―
1
Tj = 125°C
―
―
20
VD = 15 V, IC = 100 A Tj = 25°C
VIN = 15 V → 0 V
Tj = 125°C
―
2.3
2.8
―
2.3
―
IF = 100 A
―
2.1
3.3
―
1.0
2.0
―
1.7
3.0
―
0.2
0.5
―
0.1
0.3
VCE = 600 V
VCC = 300 V, IC = 100 A
VD = 15 V, VIN = 15 V
Inductive load
0V
(Note 1)
trr
2
Unit
mA
V
V
µs
2001-05-29
MIG100J201HC
b.
Brake Stage
Characteristic
Cellector cut-off current
Symbol
ICEX
Collector-emitter saturation voltage
VCE (sat)
Test Condition
Min
Typ.
Max
Tj = 25°C
―
―
1
Tj = 125°C
―
―
20
VD = 15V, IC = 30A Tj = 25°C
VIN = 15V→0V
Tj = 125°C
―
1.7
2.7
―
1.6
―
Tj = 25°C
―
―
1
Tj = 125°C
―
―
20
―
2.0
2.5
―
0.9
2.0
―
1.7
3.0
―
0.25
0.5
―
0.15
0.3
Min
Typ.
Max
―
8
―
―
35
―
VCEX = 600V
Reverse current
IR
VR=600V
Forward voltage
VF
IF = 30A
ton
toff
Switching time
tf
VCC = 300V, IC = 30A
VD = 15V, VIN = 15V 0V
Inductive load
(Note 1)
trr
c.
Unit
mA
V
mA
V
µs
Control Stage (Tj = 25°C)
Characteristic
Control circuit
current
Symbol
High side
ID (H)
Low side
ID (L)
Input-on signal voltage
Input-off signal voltage
1.3
1.5
1.7
V
VIN (off)
VD = 15 V, IC = 100 mA
2.2
2.5
2.8
V
8
10
12
―
―
1
160
200
―
40
―
―
240
300
―
60
―
―
―
5
―
110
118
125
―
80
―
11.0
12.0
12.5
―
12.5
―
1
2
3
Fault output
current
Normal
IFO (off)
Over current
protection
trip level
Inverter
Short current
protection
trip level
Trip level
Over current cut-off time
VD = 15 V
OC
VD = 15 V, Tj = 125°C
SC
VD = 15 V, Tj = 125°C
toff (OC)
Over
temperature
protection
Trip level
OT
Reset level
OTr
Control supply
under voltage
protection
Trip level
UV
Reset level
UVr
Fault output pulse width
mA
VD = 15 V, IC = 100 mA
IFO (on)
Reset level
VD = 15 V
Unit
VIN (on)
Protection
Brake
Test Condition
tFO
VD = 15 V
Case temperature
―
VD = 15 V
3
mA
A
A
µs
°C
V
ms
2001-05-29
MIG100J201HC
d.
Thermal Resistance (Tj = 25°C)
Characteristic
Junction to case thermal resistance
Case to fin thermal resistance
Symbol
Rth (j-c)
Rth (c-f)
Test Condition
Min
Typ.
Max
Inverter IGBT stage
―
―
0.418
Inverter FRD stage
―
―
1.000
Brake IGBTstage
―
―
1.562
Brake FRD stage
―
―
2.000
Compound is applied
―
0.05
―
Unit
°C / W
°C / W
Note 1: Switching time test circuit & timing chart
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MIG100J201HC
Package Dimensions: TOSHIBA 2-110A1A
Unit: mm
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2001-05-29
MIG100J201HC
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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2001-05-29
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