IRFM220A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V SOT-223 Low RDS(ON) : 0.626 Ω (Typ.) 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID Characteristic Drain-to-Source Voltage Value Continuous Drain Current (TA=25 oC ) 1.13 Continuous Drain Current (TA=70 IDM Drain Current-Pulsed VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt PD TJ , TSTG TL Units V 200 o C) A 0.9 1 O 2 O 1 O 1 O O3 Total Power Dissipation (TA=25 oC ) * Linear Derating Factor * Operating Junction and 9 + _ 30 A V 77 mJ 1.13 A 0.24 mJ 5.0 V/ns 2.4 W 0.019 W/ C o - 55 to +150 Storage Temperature Range o Maximum Lead Temp. for Soldering C 300 Purposes, 1/8 “ from case for 5-seconds Thermal Resistance Symbol RθJA Characteristic Typ. Max. -- 52 Junction-to-Ambient * Units o C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. B ©1999 Fairchild Semiconductor Corporation N-CHANNEL POWER MOSFET IRFM220A Electrical Characteristics (TA=25oC unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage ∆BV/ ∆TJ Breakdown Voltage Temp. Coeff. VGS(th) IGSS IDSS RDS(on) Min. Typ. Max. Units 200 -- -- -- 0.24 -- -- 4.0 Gate-Source Leakage , Forward -- -- 100 Gate-Source Leakage , Reverse -- -- -100 -- -- 10 -- -- 100 -- -- 0.8 Ω VGS=10V,ID=0.57A 4 O Ω VDS=40V,ID=0.57A 4 O Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance -- 1.36 -- Ciss Input Capacitance -- 275 360 Coss Output Capacitance -- 55 65 Crss Reverse Transfer Capacitance -- 25 30 td(on) Turn-On Delay Time -- 10 30 Rise Time -- 11 30 Turn-Off Delay Time -- 26 60 Fall Time -- 15 40 Qg Total Gate Charge -- 12 17 Qgs Gate-Source Charge -- 2.4 -- Qgd Gate-Drain(“Miller”) Charge -- 6.2 -- td(off) tf VGS=0V,ID=250µA V o See Fig 7 V/ C ID=250 µA 2.0 Gate Threshold Voltage gfs tr Test Condition V nA µA pF VDS=5V,ID=250 µA VGS=30V VGS=-30V VDS=200V o VDS=160V,TA=125 C VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=100V,ID=5A, ns RG=18Ω See Fig 13 4 O 5 O VDS=160V,VGS=10V, nC ID=5A See Fig 6 & Fig 12 4 O 5 O Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition IS Continuous Source Current -- -- ISM Pulsed-Source Current 1 O -- -- 9 VSD Diode Forward Voltage O -- -- 1.5 V TJ=25oC,IS=1.13A,VGS=0V trr Reverse Recovery Time -- 122 -- ns TJ=25oC ,IF=5A Qrr Reverse Recovery Charge -- 0.51 -- µC diF/dt=100A/µ s 4 1.13 A Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction o 2 L=90mH, I AS=1.13A, V DD=50V, R G=27Ω , Starting T J =25 C O O3 ISD <_ 5A, di/dt <_180A/ µs, VDD <_BVDSS , Starting T J =25 oC _ 2% 4 Pulse Test : Pulse Width = 250 µs, Duty Cycle < O Essentially Independent of Operating Temperature 5 O Integral reverse pn-diode in the MOSFET 4 O N-CHANNEL POWER MOSFET IRFM220A Fig 2. Transfer Characteristics VGS 101 15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V [A] Top : ID , Drain Current ID , Drain Current [A] Fig 1. Output Characteristics 100 @ Notes : 1. 250 µs Pulse Test 2. TA = 25 oC 10-1 10-1 100 101 25 oC 2 4 3. 250 µs Pulse Test 6 8 10 VGS , Gate-Source Voltage [V] [A] VDS , Drain-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage 2.0 IDR , Reverse Drain Current RDS(on) , [Ω] Drain-Source On-Resistance @ Notes : 1. VGS = 0 V 2. VDS = 40 V - 55 oC 10-1 101 150 oC 100 VGS = 10 V 1.5 1.0 VGS = 20 V 0.5 @ Note : TJ = 25 oC 3 6 9 12 15 100 18 @ Notes : 1. VGS = 0 V 2. 250 µs Pulse Test 150 oC o 25 C 10-1 0.4 0.0 0 101 ID , Drain Current [A] 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage [V] 400 Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd VGS , Gate-Source Voltage Capacitance [pF] 500 C iss 300 200 C oss 100 C rss @ Notes : 1. VGS = 0 V 2. f = 1 MHz 00 10 101 VDS , Drain-Source Voltage [V] VDS = 40 V 10 VDS = 100 V VDS = 160 V 5 @ Notes : ID = 5.0 A 0 0 3 6 9 QG , Total Gate Charge [nC] 12 N-CHANNEL POWER MOSFET Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 1.2 RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage IRFM220A 1.1 1.0 0.9 @ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.8 -75 -50 -25 0 25 50 75 100 125 150 3.0 2.5 2.0 1.5 1.0 @ Notes : 1. VGS = 10 V 0.5 2. ID = 2.5 A 0.0 -75 175 -50 TJ , Junction Temperature [ oC] 0 25 50 75 100 125 150 175 TJ , Junction Temperature [ oC] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Ambient Temperature 102 [A] 1.2 [A] Operation in This Area is Limited by R DS(on) 100 µs 1 ms 10 ms 100 ms 100 ID , Drain Current 101 10 µs DC 10-1 @ Notes : 1. TA = 25 oC 10-2 2. TJ 0.9 0.6 0.3 = 150 oC 3. Single Pulse 100 101 0.0 25 102 50 75 100 Fig 11. Thermal Response Thermal Response 102 D=0.5 1 10 0.2 @ Notes : 1. Zθ J A (t)=52 0.1 100 o C/W Max. 0.05 2. Duty Factor, D=t1 /t2 0.02 3. TJ M -TA =PD M *Zθ J A (t) 0.01 PDM t1 t2 single pulse 10- 1 10- 5 10- 4 10- 3 125 TA , Ambient Temperature [ oC] VDS , Drain-Source Voltage [V] θ 10-3 Z JA(t) , ID , Drain Current -25 10- 2 10- 1 100 t 1 , Square Wave Pulse Duration 101 [sec] 102 103 150 N-CHANNEL POWER MOSFET IRFM220A Fig 12. Gate Charge Test Circuit & Waveform “ Current Regulator ” 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS Qgd Qgs VGS DUT 3mA R1 R2 Current Sampling (IG) Resistor Charge Current Sampling (ID) Resistor Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 10V tp tp Time N-CHANNEL POWER MOSFET IRFM220A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by “RG” • IS controlled by Duty Factor “D” Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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