ON NVD4804NT4G Power mosfet 30 v, 117 a, single nâ channel, dpak/ipak Datasheet

NTD4804N, NVD4804N
Power MOSFET
30 V, 117 A, Single N−Channel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
AEC Q101 Qualified − NVD4804N
These Devices are Pb−Free and are RoHS Compliant
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RDS(on) MAX
V(BR)DSS
D
N−Channel
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
G
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
"20
V
ID
19.6
A
Continuous Drain
Current (RqJA) (Note 1)
TA = 25°C
Power Dissipation
(RqJA) (Note 1)
TA = 25°C
PD
2.66
W
Continuous Drain
Current (RqJA) (Note 2)
TA = 25°C
ID
14.5
A
TA = 85°C
S
4
15.2
4
1 2
11
TA = 25°C
PD
1.43
W
Continuous Drain
Current (RqJC)
(Note 1)
TC = 25°C
ID
124
A
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
PD
107
TA = 25°C
IDM
230
TA = 25°C
IDmaxPkg
45
A
TJ, Tstg
−55 to
175
°C
IS
78
A
Drain to Source dV/dt
dV/dt
6.0
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
L = 1.0 mH, IL(pk) = 30 A, RG = 25 W)
EAS
450
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
TC = 85°C
tp=10ms
Current Limited by Package
Operating Junction and Storage Temperature
Source Current (Body Diode)
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
W
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
3
CASE 369AD
CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
96
4
Drain
4
Drain
AYWW
48
04NG
Steady
State
TA = 85°C
1
3
4
Drain
AYWW
48
04NG
Parameter
Pulsed Drain Current
117 A
5.5 mW @ 4.5 V
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
Power Dissipation
(RqJA) (Note 2)
ID MAX
4.0 mW @ 10 V
30 V
Applications
AYWW
48
04NG
•
•
•
•
•
2
1 2 3
1 Drain 3
Gate Source Gate Drain Source 1 2 3
Gate Drain Source
A
= Assembly Location
Y
= Year
WW
= Work Week
4804N = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 9
1
Publication Order Number:
NTD4804N/D
NTD4804N, NVD4804N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case (Drain)
Parameter
RqJC
1.4
°C/W
Junction−to−TAB (Drain)
RqJC−TAB
3.5
Junction−to−Ambient − Steady State (Note 1)
RqJA
56.4
Junction−to−Ambient − Steady State (Note 2)
RqJA
105
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
26
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = 250 mA
"100
mA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
gFS
2.5
7.6
VGS = 10 to 11.5 V
VGS = 4.5 V
Forward Transconductance
1.5
ID = 30 A
3.4
ID = 15 A
3.4
ID = 30 A
4.7
ID = 15 A
4.6
VDS = 15 V, ID = 15 A
V
mV/°C
4.0
mW
5.5
23
S
4490
pF
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
VGS = 0 V, f = 1.0 MHz,
VDS = 12 V
952
Crss
556
Total Gate Charge
QG(TOT)
30
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 15 V,
ID = 30 A
40
nC
5.5
13
13
VGS = 11.5 V, VDS = 15 V,
ID = 30 A
73
nC
18
ns
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
20
24
tf
8
td(on)
10
tr
td(off)
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
19
35
5
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTD4804N, NVD4804N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
TJ = 25°C
0.81
1.2
V
TJ = 125°C
0.72
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Time
VGS = 0 V,
IS = 30 A
34
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 30 A
ns
19
15
QRR
30
nC
Source Inductance
LS
2.49
nH
Drain Inductance, DPAK
LD
0.0164
Drain Inductance, IPAK
LD
Gate Inductance
LG
3.46
Gate Resistance
RG
0.6
PACKAGE PARASITIC VALUES
TA = 25°C
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3
1.88
W
NTD4804N, NVD4804N
TYPICAL PERFORMANCE CURVES
240
10 V
6V
VDS ≥ 10 V
TJ = 25°C
200
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
240
4.5 V
160
4V
120
80
3.6 V
40
200
160
120
80
TJ = 125°C
TJ = 25°C
40
3.2 V
1
2
5
4
3
0
2
4
3
5
6
7
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 30 A
TJ = 25°C
0.009
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.010
0.01
TJ = 25°C
0.0075
0.008
0.007
0.006
0.005
VGS = 4.5 V
0.005
VGS = 11.5 V
0.0025
0.004
0.003
2
4
8
6
10
0
10
20
30
40
50
60
70
80
90 100
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
1.6
1
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100,000
VGS = 0 V
ID = 30 A
VGS = 10 V
TJ = 175°C
1.5
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
TJ = −55°C
0
0
1.4
10,000
1.3
1.2
1.1
1.0
1000
TJ = 125°C
0.9
0.8
0.7
−50 −25
100
0
25
50
75
100
125
150
175
0
5
10
15
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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4
20
NTD4804N, NVD4804N
TYPICAL PERFORMANCE CURVES
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
6000
TJ = 25°C
Ciss
C, CAPACITANCE (pF)
5000
4000
Ciss
3000
Crss
2000
Coss
1000
0
15
VDS = 0 V
VGS = 0 V
5
5
0
VGS
VDS
10
Crss
10
15
20
25
30
5
QT
4
2
1
ID = 30 A
TJ = 25°C
0
0
5
15
20
25
10
QG, TOTAL GATE CHARGE (nC)
30
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
Figure 7. Capacitance Variation
30
1000
100
IS, SOURCE CURRENT (AMPS)
VDD = 15 V
ID = 30 A
VGS = 11.5 V
tr
td(off)
tf
td(on)
10
1
10
RG, GATE RESISTANCE (OHMS)
VGS = 0 V
25
100
15
10
5
100
100 ms
1 ms
10 ms
dc
1
0.1
10
1
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.4
0.6
1.0
0.8
Figure 10. Diode Forward Voltage vs. Current
1000
10
0.2
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
VGS = 20 V
SINGLE PULSE
TC = 25°C
TJ = 25°C
20
0
0
1
I D, DRAIN CURRENT (AMPS)
Q2
3
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
t, TIME (ns)
Q1
500
ID = 30 A
400
300
200
100
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
175
NTD4804N, NVD4804N
TYPICAL PERFORMANCE CURVES
I D, DRAIN CURRENT (AMPS)
100
100°C
125°C
25°C
10
1
1
100
10
PULSE WIDTH (ms)
1000
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 13. Avalanche Characteristics
1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
SINGLE PULSE
0.01
1.0E-05
1.0E-04
t1
t2
DUTY CYCLE, D = t1/t2
1.0E-03
1.0E-02
t, TIME (ms)
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
1.0E-01
1.0E+00
1.0E+01
Figure 14. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTD4804NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTD4804N−35G
IPAK Trimmed Lead
(3.5 " 0.15 mm)
(Pb−Free)
75 Units / Rail
NVD4804NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NTD4804N, NVD4804N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
A
E
b3
c2
B
4
L3
Z
D
1
2
H
DETAIL A
3
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
L4
b2
e
c
b
0.005 (0.13)
M
C
H
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
NTD4804N, NVD4804N
PACKAGE DIMENSIONS
3.5 MM IPAK, STRAIGHT LEAD
CASE 369AD
ISSUE B
E
E3
L2
NOTES:
1.. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2.. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30mm FROM TERMINAL TIP.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD GATE OR MOLD FLASH.
A
E2
A1
D2
D
L1
DIM
A
A1
A2
b
b1
D
D2
E
E2
E3
e
L
L1
L2
L
T
SEATING
PLANE
A1
b1
2X
E2
e
A2
3X
b
0.13
M
D2
T
MILLIMETERS
MIN
MAX
2.19
2.38
0.46
0.60
0.87
1.10
0.69
0.89
0.77
1.10
5.97
6.22
4.80
−−−
6.35
6.73
4.57
5.45
4.45
5.46
2.28 BSC
3.40
3.60
−−−
2.10
0.89
1.27
OPTIONAL
CONSTRUCTION
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
H
D
G
3 PL
0.13 (0.005)
M
T
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
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NTD4804N/D
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