APT80GA60B
APT80GA60S
600V
High Speed PT IGBT
TO
-2
47
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved
through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low
gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
APT80GA60S
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even
when switching at high frequency.
Single die IGBT
®
FEATURES
APT80GA60B
D3PAK
TYPICAL APPLICATIONS
• Fast switching with low EMI
• ZVS phase shifted and other full bridge
• Very Low Eoff for maximum efficiency
• Half bridge
• Ultra low Cres for improved noise immunity
• High power PFC boost
• Low conduction loss
• Welding
• Low gate charge
• UPS, solar, and other inverters
• Increased intrinsic gate resistance for low EMI
• High frequency, high efficiency industrial
• RoHS compliant
Absolute Maximum Ratings
Ratings
Unit
Collector Emitter Voltage
600
V
IC1
Continuous Collector Current @ TC = 25°C
143
IC2
Continuous Collector Current @ TC = 100°C
80
240
A
ICM
Pulsed Collector Current
VGE
Gate-Emitter Voltage 2
±30
V
PD
Total Power Dissipation @ TC = 25°C
625
W
1
SSOA
Switching Safe Operating Area @ TJ = 150°C
TJ, TSTG
Operating and Storage Junction Temperature Range
TL
-55 to 150
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
Static Characteristics
Symbol
240A @ 600V
°C
300
TJ = 25°C unless otherwise specified
Parameter
Test Conditions
Min
VBR(CES)
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 1.0mA
600
VCE(on)
Collector-Emitter On Voltage
VGE(th)
Gate Emitter Threshold Voltage
Zero Gate Voltage Collector Current
IGES
Gate-Emitter Leakage Current
Max
2.5
VGE = 15V,
TJ = 25°C
2.0
IC = 47A
TJ = 125°C
1.9
VGE =VCE , IC = 1mA
ICES
Typ
3
4.5
V
6
VCE = 600V,
TJ = 25°C
250
VGE = 0V
TJ = 125°C
1000
VGS = ±30V
Unit
±100
μA
nA
Thermal and Mechanical Characteristics
Symbol
Min
Typ
Max
Unit
RθJC
Junction to Case Thermal Resistance
-
-
0.2
°C/W
WT
Package Weight
-
5.9
-
g
10
in·lbf
Torque
Characteristic
Mounting Torque (TO-247 Package), 4-40 or M3 screw
Microsemi Website - http://www.microsemi.com
6 - 2009
Vces
Parameter
052-6323 Rev C
Symbol
Dynamic Characteristics
Symbol
Parameter
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Qg3
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
SSOA
td(on)
tr
td(off)
tf
Gate- Collector Charge
Switching Safe Operating Area
Turn-On Delay Time
APT80GA60B_S
TJ = 25°C unless otherwise specified
Test Conditions
Min
Typ
Capacitance
6390
VGE = 0V, VCE = 25V
580
f = 1MHz
63
Gate Charge
230
VGE = 15V
40
VCE= 300V
78
240
Inductive Switching (25°C)
VCC = 400V
27
Turn-Off Delay Time
VGE = 15V
158
IC = 47A
78
RG = 4.7Ω4
840
Eoff6
Turn-Off Switching Energy
TJ = +25°C
751
td(on
Turn-On Delay Time
Inductive Switching (125°C)
21
Current Rise Time
VCC = 400V
31
Turn-Off Delay Time
VGE = 15V
194
IC = 47A
132
Eon2
Turn-On Switching Energy
RG = 4.7Ω4
1275
Eoff6
Turn-Off Switching Energy
TJ = +125°C
1112
tf
Current Fall Time
nC
23
Turn-On Switching Energy
tr
pF
A
L= 100uH, VCE = 600V
Eon2
td(off)
Unit
IC = 47A
TJ = 150°C, RG = 4.7Ω4, VGE = 15V,
Current Rise Time
Current Fall Time
Max
ns
μJ
ns
μJ
052-6323 Rev C
6 - 2009
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
APT80GA60B_S
150
300
TJ= 125°C
= 15V
125
TJ= 55°C
TJ= 150°C
100
TJ= 25°C
75
15V
275
50
25
12V
13V
250
225
10V
200
175
150
9V
125
100
75
8V
50
5V
25
IC, COLLECTOR CURRENT (A)
320
280
240
200
160
120
80
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ= 25°C
40
TJ= -55°C
TJ= 125°C
0
2
4
6
8
10
TJ = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
IC = 94A
3
IC = 47A
IC = 23.5A
2
1
6
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.05
0.95
0.90
0.85
0.80
0.75
-.50 -.25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
J
12
VCE = 120V
10
VCE = 300V
8
VCE = 480V
6
4
2
0
4
8
12
15
200 240
GATE CHARGE (nC)
FIGURE 4, Gate charge
5
280
4
IC = 94A
3
IC = 47A
2
IC = 23.5A
1
VGE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
0
0
50
100
150
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
150
IC, DC COLLECTOR CURRENT (A)
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
1.10
1.00
I = 47A
C
T = 25°C
14
0
12
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
4
0
16
0
4
8
12 16 20
24 28 32
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 25°C)
125
100
75
6 - 2009
250μs PULSE
TEST<0.5 % DUTY
CYCLE
VGE, GATE-TO-EMITTER VOLTAGE (V)
360
0
0
1
2
3
4
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (TJ = 25°C)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
50
25
0
25
50
75
100
125
150
TC, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature
052-6323 Rev C
IC, COLLECTOR CURRENT (A)
GE
IC, COLLECTOR CURRENT (A)
V
Typical Performance Curves
28
VGE = 15V
26
24
22
20
18
16
0
20
40
60
250
td(OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
VCE = 400V
TJ = 25°C, or 125°C
RG = 4.7Ω
L = 100μH
APT80GA60B_S
300
30
80
VGE =15V,TJ=125°C
200
150
VGE =15V,TJ=25°C
100
50
0
100
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
100
RG = 4.7Ω, L = 100μH, VCE = 400V
VCE = 400V
RG = 4.7Ω
L = 100μH
0
20
40
60
80
100
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
160
140
120
tr, FALL TIME (ns)
tr, RISE TIME (ns)
80
60
40
20
0
TJ = 25 or 125°C,VGE = 15V
0
20
40
60
80
60
100
V
= 400V
CE
V
= +15V
GE
R =4.7Ω
G
3000
TJ = 125°C
2000
TJ = 25°C
40
60
80
100
G
2500
TJ = 125°C
2000
1500
1000
TJ = 25°C
500
0
20
40
60
80
100
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
4000
Eon2,94A
J
6000
Eoff,94A
5000
4000
Eon2,47A
3000
Eoff,47A
2000
Eon2,23A
1000
SWITCHING ENERGY LOSSES (μJ)
V
= 400V
CE
V
= +15V
GE
T = 125°C
7000
V
= 400V
CE
V
= +15V
GE
R = 10Ω
G
3000
0
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
Eon2,94A
Eoff,94A
2000
Eon2,47A
1000
Eoff,47A
Eon2,23A
Eoff,23A
0
20
V
= 400V
CE
V
= +15V
GE
R = 4.7Ω
3000
0
8000
SWITCHING ENERGY LOSSES (μJ)
0
3500
0
20
40
60
80
100
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
6 - 2009
RG = 4.7Ω, L = 100μH, VCE = 400V
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
0
052-6323 Rev C
TJ = 25°C, VGE = 15V
40
0
EOFF, TURN OFF ENERGY LOSS (μJ)
Eon2, TURN ON ENERGY LOSS (μJ)
80
20
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
4000
1000
TJ = 125°C, VGE = 15V
100
0
Eoff,23A
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
Typical Performance Curves
APT80GA60B_S
1000
Cies
IC, COLLECTOR CURRENT (A)
C, CAPACITANCE (pF)
10000
100
1000
Coes
100
Cres
10
1
0.1
10
0
100
200
300
400
500
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
1
10
100
1000
VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
0.20
D = 0.9
0.15
0.7
0.5
0.10
Note:
PDM
0.3
t1
t2
0.05
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
SINGLE PULSE
0.05
10-5
10-4
10-3
10-2
0.1
1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
6 - 2009
0
052-6323 Rev C
ZθJC, THERMAL IMPEDANCE (°C/W)
0.25
APT80GA60B_S
10%
Gate Voltage
TJ = 125°C
td(on)
90%
APT30DQ60
Collector Current
tr
V CE
IC
V CC
5%
10%
5%
Collector Voltage
Switching Energy
A
D.U.T.
Figure 20, Inductive Switching Test Circuit
Figure 21, Turn-on Switching Waveforms and Definitions
TJ = 125°C
90%
Gate Voltage
td(off)
Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figure 22, Turn-off Switching Waveforms and Definitions
D3PAK Package Outline
TO-247 (B) Package Outline
15.49 (.610)
16.26 (.640)
Collector
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
Collector
e3 100% Sn Plated
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
4.50 (.177) Max.
6 - 2009
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
052-6323 Rev C
13.41 (.528)
13.51(.532)
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Collector
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
Emitter
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Emitter
Collector
Gate
Dimensions in Millimeters (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.