CJQ4435 SOP8 Plastic-Encapsulate MOSFETS CJQ4435 P-Channel MOSFET SOP8 APPLICATIONS Load Switches Battery Switch Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current (t =10s) (note 1) ID -9.1 Pulsed Drain Current IDM -50 Drain-Source Diode Forward Current (t =10s) (note 1) IS -2 Power Dissipation (t =10s) PD 1.4 W RθJA 89 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 Thermal Resistance from Junction to Ambient (t ≤10s) (note 1) [email protected] www.zpsemi.com Units V A ℃ 1 of 3 CJQ4435 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Static Characteristics Drain Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250µA Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V -1 µA Gate body Leakage lGSS VDS=0V, VGS=±20V ±100 nA -3 V Gate Threshold Voltage Drain-Source on-state Resistance (note 2) VGS(th) RDS(on) Forward Transconductance (note 2) gFs VDS =VGS, ID =-250µA -30 V -1 VGS =-10V, ID =-9.1A 24 VGS =-4.5V, ID =-6.9A 35 VDS =-10V, ID =-9.1A 20 mΩ S Dynamic Characteristics (note 3) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg 1350 VDS =-15V,VGS =0V,f =1MHz pF 215 185 VDS =-15V,VGS =-10V,ID =-9.1A 50 25 Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time tr td(off) Fall Time nC 4 7.5 f =1MHz td(on) Rise Time Turn-Off Delay Time VDS =-15V,VGS =-4.5V,ID =-9.1A 5.8 Ω 15 VDD=-15V,RL=15Ω 15 ID =-1A,VGEN=-10V,RG=1Ω 70 tf ns 25 Drain-Source Body Diode Characteristics Diode Forward Voltage VSD IS=-2A,VGS=0V -1.2 V Notes: 1. Surface mounted on 1”×1” FR4 board. 2. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤2%. 3. Guaranteed by design, not subject to production testing. [email protected] www.zpsemi.com 2 of 3 CJQ4435 Transfer Characteristics Output Characteristics -24 Ta=25℃ Pulsed -24 VGS=-3V,-3.5V,-4V,-4.5V VDS=-10V Ta=25℃ Pulsed ID DRAIN CURRENT DRAIN CURRENT ID (A) -18 (A) -18 -12 VGS=-2.5V -6 -12 -6 VGS=-2V -0 -0 -2 -4 -6 DRAIN TO SOURCE VOLTAGE -8 VDS -0 -10 -0 -1 (V) -2 -3 GATE TO SOURCE VOLTAGE RDS(ON) —— ID VGS -4 (V) RDS(ON) —— VGS 80 80 Ta=25℃ Pulsed Ta=25℃ Pulsed (mΩ) 60 RDS(ON) 40 ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) 60 VGS=-4.5V 20 40 ID=-9.1A 20 VGS=-10V 0 -0 -2 -4 -6 DRAIN CURRENT ID -8 0 -10 -0 -2 (A) -4 -10 (V) -2 -1 Ta=25℃ Pulsed IS (A) -1.5 SOURCE CURRENT VTH (V) -8 VGS IS —— VSD Threshold Voltage -1.6 THRESHOLD VOLTAGE -6 GATE TO SOURCE VOLTAGE -1.4 ID=-250uA -1.3 -1.2 25 50 75 JUNCTION TEMPERATURE [email protected] 100 TJ 125 -0.1 -0.01 -1E-3 -0.2 (℃ ) -0.4 -0.6 SOURCE TO DRAIN VOLTAGE www.zpsemi.com -0.8 -1.0 VSD (V) 3 of 3