BCX42 PNP Silicon AF and Switching Transistor • For general AF applications 2 3 • High breakdown voltage 1 • Low collector-emitter saturation voltage • Complementary type: BCX41 (NPN) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type BCX42 Marking DKs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 125 Collector-base voltage VCBO 125 Emitter-base voltage VEBO 5 Collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point2) Symbol RthJS Value 800 1 Unit V mA A mA TS ≤ 79 °C -65 ... 150 Value ≤ 215 Unit K/W 1Pb-containing 2For package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-27 BCX42 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 125 V IC = 10 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 125 - - V(BR)EBO 5 - - IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current µA I CBO VCB = 100 V, IE = 0 - - 0.1 VCB = 100 V, IE = 0 , T A = 150 °C - - 20 VCE = 100 V, TA = 85 °C - - 10 VCE = 100 V, TA = 125 °C - - 75 - - 100 Collector-emitter cutoff current I CEO Emitter-base cutoff current I EBO nA VEB = 4 V, IC = 0 DC current gain1) - h FE IC = 100 µA, VCE = 1 V 25 - - IC = 100 mA, V CE = 1 V 63 - - IC = 200 mA, V CE = 1 V 40 - - VCEsat - - 0.9 VBEsat - - 1.4 fT - 150 - MHz Ccb - 12 - pF Collector-emitter saturation voltage1) V IC = 300 mA, IB = 30 mA Base emitter saturation voltage1) IC = 300 mA, IB = 30 mA AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 2 2007-04-27 BCX42 DC current gain hFE = ƒ(IC) VCE = 1 V 10 3 Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 BCX 42/BSS 63 EHP00435 3 BCX 42/BSS 63 10 EHP00433 mA h FE 5 150 ˚C 25 ˚C -50 ˚C ΙC 2 10 150 ˚C 25 ˚C 5 -50 ˚C 10 2 1 10 5 5 0 10 5 10 1 10 -1 5 10 0 5 10 1 5 10 2 10 -1 mA 10 3 0 200 400 600 mV 800 ΙC VCE sat Base-emitter saturation voltage Collector current I C = ƒ(V BE) IC = ƒ(V BEsat), hFE = 10 VCE = 1V 10 3 BCX 42/BSS 63 EHP00432 10 3 mA BCX 42/BSS 63 EHP00429 mA ΙC ΙC 10 2 10 2 5 5 150 ˚C 25 ˚C -50 ˚C 10 1 10 1 5 10 TA = 150 ˚C 25 ˚C -50 ˚C 5 0 0 10 5 10 -1 5 0 1 2 V 10 -1 3 VBE sat 0 1 2 V 3 VBE 3 2007-04-27 BCX42 Collector cutoff current ICBO = ƒ(TA) VCBO = 100 V BCX 42/BSS 63 10 4 nA Ι CB0 Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz EHP00434 10 3 BCX 42/BSS 63 EHP00431 MHz max 10 3 fT 5 5 10 2 5 10 2 typ 10 1 5 10 5 0 5 10 -1 0 50 100 ˚C 10 1 10 0 150 5 10 1 5 10 2 mA 10 3 ΙC TA Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) Total power dissipation Ptot = ƒ(TS) 550 90 mW pF 400 60 Ptot CCB(CEB ) 450 70 350 50 300 40 250 200 CEB 30 BCW66K BCW66 150 20 100 10 50 CCB 0 0 4 8 12 16 V 0 0 22 VCB(VEB) 4 15 30 45 60 75 90 105 120 °C 150 TS 2007-04-27 BCX42 Total power dissipation Ptot = ƒ(TS) 10 3 BCX 42/BSS 63 Ptot max 5 Ptot DC EHP00430 D= tp T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2007-04-27 Package SOT23 BCX42 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 6 2007-04-27 BCX42 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2007-04-27