LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series S-L2SA812QLT1G Series General Purpose Transistors FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 3 ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 DEVICE MARKING AND ORDERING INFORMATION Device L2SA812QLT1G S-L2SA812QLT1G L2SA812QLT3G S-L2SA812QLT3G L2SA812RLT1G S-L2SA812RLT1G L2SA812RLT3G S-L2SA812RLT3G L2SA812SLT1G S-L2SA812SLT1G L2SA812SLT3G S-L2SA812SLT3G 2 Marking Shipping M8 3000/Tape&Reel M8 10000/Tape&Reel M6 3000/Tape&Reel M6 10000/Tape&Reel M7 3000/Tape&Reel M7 10000/Tape&Reel SOT-23 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS Symbol Rating L2SA812 Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -6 V IC -150 mAdc Symbol Max Unit 200 mW 1.8 mW/oC Collector current-continuoun THERMAL CHARATEERISTICS Characteristic Total Device Dissipation FR-5 Board, (1) PD o TA=25 C o Derate above 25 C Thermal Resistance, Junction to Ambient R θ JA 556 o C/W PD Total Device Dissipation o Alumina Substrate, (2) TA=25 C o Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R θJA Tj ,Tstg 200 mW 2.4 mW/oC 417 -55 to +150 o C/W o C Rev.O 1/5 LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series S-L2SA812QLT1G Series ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)CEO -50 - - V V(BR)EBO -6 - - V V(BR)CBO -60 - - V (VCB=-50V) ICBO - - -0.1 µA Emitter Cutoff Current (VBE=-6V) IEBO -0.1 µA OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC=-1mA) Emitter-Base Breakdown Voltage (IE=-50 µΑ ) Collector-Base Breakdown Voltage (IC=-50 µA) Collector Cutoff Current ON CHARACTERISTICS DC Current Gain (IC=-1mA,VCE=-6.0V) 120 hFE Collector-Emitter Saturation Voltage (IC=-100mA,IB=-10mA) - 560 VCE(sat) - -0.18 -0.3 V VBE -0.58 -0.62 -0.68 V Current-Gain-Bandwidth Product (VCE=-6.0V,IE =-10mA) Ft - 180 - MHz Output Capacitance(VCE = -10V, IE=0, f=1.0MHz) Cobo 4.5 - pF Base -Emitter On Voltage IE=-1.0mA,VCE=-6.0V) SMALL-SIGNAL CHARACTERISTICS - hFE Values are classified as followes NOTE: * Q R S hFE 120~270 180~390 270~560 Rev.O 2/5 LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series S-L2SA812QLT1G Series Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics( ) –50 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) –20 –35.0 –10 VCE= –10 V T A = 100°C 25°C – 40°C –10 –50 –2 –1 –0.5 T A = 25°C –28.0 –8 –24.5 –21.0 –6 –17.5 –14.0 –4 –10.5 –7.0 –2 –3.5µA –0.2 –0.1 I B =0 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 0 –1.6 –0.4 –0.8 –1.2 –1.6 –2.0 V CE , COLLECTOR TO EMITTER VOLTAGE (V) V BE , BASE TO EMITTER VOLTAGE(V) Fig.3 Grounded emitter output characteristics( ) Fig.4 DC current gain vs. collector current ( ) –100 500 T A = 25°C –80 –60 VCE= –5 V –3V –1V T A = 25°C 500 450 400 350 300 h FE, DC CURRENT GAIN I C, COLLECTOR CURRENT (mA) –31.5 –250 –200 –150 –40 –100 –20 –50 µA 200 100 50 I B =0 0 0 –1 –2 –3 –4 –5 –0.2 V CE , COLLECTOR TO EMITTER VOLTAGE (V) –0.5 –1 –2 –5 –10 –20 –50 –100 I C, COLLECTOR CURRENT (mA) Fig.6 Collector-emitter saturation voltage vs. Fig.5 DC current gain vs. collector current ( ) 500 V CE(sat), COLLECTOR SATURATION VOLTAGE(V) collector current ( ) T A = 100°C h FE, DC CURRENT GAIN 25°C –40°C 200 100 50 VCE= – 6V –0.2 –0.5 –1 –2 –5 –10 –20 I C, COLLECTOR CURRENT (mA) –50 –100 –1 T A = 25°C –0.5 –0.2 I C /I B = 50 20 –0.1 10 –0.05 –0.2 –0.5 –1 –2 –5 –10 –20 –50 –100 I C, COLLECTOR CURRENT (mA) Rev.O 3/5 LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series S-L2SA812QLT1G Series Fig.8 Gain bandwidth product vs. emitter current 1000 –1 T A = 25°C V CE = –12V f r , TRANSITION FREQUENCY(MHz) I C /I B = 10 –0.5 –0.2 T A = 100°C 25°C –40°C –0.1 –0.05 –0.2 –0.5 –1 –2 –5 –10 –20 –50 500 200 100 50 –100 –0.2 –0.5 –1 –2 –5 –10 –20 –50 –100 I E, EMITTER CURRENT (mA) I C, COLLECTOR CURRENT (mA) Fig.9 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) 20 T A = 25°C f =1MHz I E = 0A I C = 0A C ib 10 C ob 5 2 –0.5 –1 –2 –5 –10 –20 V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) Rev.O 4/5 LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series S-L2SA812QLT1G Series SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 5/5