LRC L2SA812RLT1G S- prefix for automotive and other applications requiring unique site Datasheet

LESHAN RADIO COMPANY, LTD.
L2SA812QLT1G Series
S-L2SA812QLT1G Series
General Purpose Transistors
FEATURE
ƽHigh Voltage: VCEO = -50 V.
ƽEpitaxial planar type.
ƽNPN complement: L2SC1623
3
ƽ We declare that the material of product compliance with RoHS requirements.
ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
1
DEVICE MARKING AND ORDERING INFORMATION
Device
L2SA812QLT1G
S-L2SA812QLT1G
L2SA812QLT3G
S-L2SA812QLT3G
L2SA812RLT1G
S-L2SA812RLT1G
L2SA812RLT3G
S-L2SA812RLT3G
L2SA812SLT1G
S-L2SA812SLT1G
L2SA812SLT3G
S-L2SA812SLT3G
2
Marking
Shipping
M8
3000/Tape&Reel
M8
10000/Tape&Reel
M6
3000/Tape&Reel
M6
10000/Tape&Reel
M7
3000/Tape&Reel
M7
10000/Tape&Reel
SOT-23
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Symbol
Rating
L2SA812
Unit
Collector-Emitter Voltage
VCEO
-50
V
Collector-Base Voltage
VCBO
-60
V
Emitter-Base Voltage
VEBO
-6
V
IC
-150
mAdc
Symbol
Max
Unit
200
mW
1.8
mW/oC
Collector current-continuoun
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board, (1)
PD
o
TA=25 C
o
Derate above 25 C
Thermal Resistance, Junction to Ambient
R
θ JA
556
o
C/W
PD
Total Device Dissipation
o
Alumina Substrate, (2) TA=25 C
o
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
Tj ,Tstg
200
mW
2.4
mW/oC
417
-55 to +150
o
C/W
o
C
Rev.O 1/5
LESHAN RADIO COMPANY, LTD.
L2SA812QLT1G Series
S-L2SA812QLT1G Series
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)CEO
-50
-
-
V
V(BR)EBO
-6
-
-
V
V(BR)CBO
-60
-
-
V
(VCB=-50V)
ICBO
-
-
-0.1
µA
Emitter Cutoff Current (VBE=-6V)
IEBO
-0.1
µA
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=-1mA)
Emitter-Base Breakdown Voltage
(IE=-50 µΑ )
Collector-Base Breakdown Voltage
(IC=-50 µA)
Collector Cutoff Current
ON CHARACTERISTICS
DC Current Gain
(IC=-1mA,VCE=-6.0V)
120
hFE
Collector-Emitter Saturation Voltage
(IC=-100mA,IB=-10mA)
-
560
VCE(sat)
-
-0.18
-0.3
V
VBE
-0.58
-0.62
-0.68
V
Current-Gain-Bandwidth Product
(VCE=-6.0V,IE =-10mA)
Ft
-
180
-
MHz
Output Capacitance(VCE = -10V, IE=0, f=1.0MHz)
Cobo
4.5
-
pF
Base -Emitter On Voltage
IE=-1.0mA,VCE=-6.0V)
SMALL-SIGNAL CHARACTERISTICS
-
hFE Values are classified as followes
NOTE:
*
Q
R
S
hFE
120~270
180~390
270~560
Rev.O 2/5
LESHAN RADIO COMPANY, LTD.
L2SA812QLT1G Series
S-L2SA812QLT1G Series
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics( )
–50
I C, COLLECTOR CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
–20
–35.0
–10
VCE= –10 V
T A = 100°C
25°C
– 40°C
–10
–50
–2
–1
–0.5
T A = 25°C
–28.0
–8
–24.5
–21.0
–6
–17.5
–14.0
–4
–10.5
–7.0
–2
–3.5µA
–0.2
–0.1
I B =0
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
0
–1.6
–0.4
–0.8
–1.2
–1.6
–2.0
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
V BE , BASE TO EMITTER VOLTAGE(V)
Fig.3 Grounded emitter output characteristics( )
Fig.4 DC current gain vs. collector current ( )
–100
500
T A = 25°C
–80
–60
VCE= –5 V
–3V
–1V
T A = 25°C
500
450
400
350
300
h FE, DC CURRENT GAIN
I C, COLLECTOR CURRENT (mA)
–31.5
–250
–200
–150
–40
–100
–20
–50 µA
200
100
50
I B =0
0
0
–1
–2
–3
–4
–5
–0.2
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
–0.5
–1
–2
–5
–10
–20
–50
–100
I C, COLLECTOR CURRENT (mA)
Fig.6 Collector-emitter saturation voltage vs.
Fig.5 DC current gain vs. collector current ( )
500
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
collector current ( )
T A = 100°C
h FE, DC CURRENT GAIN
25°C
–40°C
200
100
50
VCE= – 6V
–0.2
–0.5
–1
–2
–5
–10
–20
I C, COLLECTOR CURRENT (mA)
–50
–100
–1
T A = 25°C
–0.5
–0.2
I C /I B = 50
20
–0.1
10
–0.05
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
I C, COLLECTOR CURRENT (mA)
Rev.O 3/5
LESHAN RADIO COMPANY, LTD.
L2SA812QLT1G Series
S-L2SA812QLT1G Series
Fig.8 Gain bandwidth product vs. emitter current
1000
–1
T A = 25°C
V CE = –12V
f r , TRANSITION FREQUENCY(MHz)
I C /I B = 10
–0.5
–0.2
T A = 100°C
25°C
–40°C
–0.1
–0.05
–0.2
–0.5
–1
–2
–5
–10
–20
–50
500
200
100
50
–100
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
I E, EMITTER CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
Fig.9 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
C ob , COLLECTOR OUTPUT CAPACITANCE( pF)
C ib , EMITTER INPUT CAPACITANCE (pF)
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
20
T A = 25°C
f =1MHz
I E = 0A
I C = 0A
C ib
10
C ob
5
2
–0.5
–1
–2
–5
–10
–20
V CB, COLLECTOR TO BASE VOLTAGE (V)
V EB, EMITTER TO BASE VOLTAGE (V)
Rev.O 4/5
LESHAN RADIO COMPANY, LTD.
L2SA812QLT1G Series
S-L2SA812QLT1G Series
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
A
B
C
D
G
H
J
G
C
D
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
DIM
B S
H
K
J
K
L
S
V
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 5/5
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