NZ9F2V4ST5G, SZNZ9F2V4ST5G SERIES Zener Voltage Regulators 250 mW SOD−923 Surface Mount This series of Zener diodes is packaged in a SOD−923 surface mount package. They are designed to provide voltage regulation protection and are especially attractive in situations where space is at a premium. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. http://onsemi.com 1 Cathode Specification Features • Standard Zener Breakdown Voltage Range −2.4 V to 18 V • Steady State Power Rating of 250 mW • Small Body Outline Dimensions: • • • • • 0.039″ x 0.024″ (1.00 mm x 0.60 mm) Low Body Height: 0.016″ (0.40 mm) ESD Rating of Class 3 (>16 kV) per Human Body Model Tight Tolerance VZ SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic Epoxy Meets UL 94, V−0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating Thermal Resistance from Junction−to−Ambient Junction and Storage Temperature Range MARKING DIAGRAM 2 1 SOD−923 CASE 514AB 1 X MG G 2 X = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION QUALIFIED MAX REFLOW TEMPERATURE: 260°C Total Device Dissipation FR−5 Board, (Note 1) @ TA = 25°C Derate above 25°C 2 Anode Symbol Max Unit 250 2.0 mW mW/°C RqJA 500 °C/W TJ, Tstg −65 to +150 °C Device Package Shipping† NZ9FxxxST5G, SZNZ9FxxxST5G SOD−923 (Pb−Free) 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. PD DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 Minimum Pad. © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 3 1 Publication Order Number: NZ9F2V4S/D NZ9F2V4ST5G, SZNZ9F2V4ST5G SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types) Symbol I IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF QVZ Maximum Temperature Coefficient of VZ C Max. Capacitance @VR = 0 and f = 1 MHz VZ VR IR VF IZT Figure 1. Zener Voltage Regulator 100 POWER DISSIPATION (%) 80 60 40 20 0 0 25 50 75 100 125 TEMPERATURE (°C) Figure 2. Steady State Power Derating http://onsemi.com 2 150 V NZ9F2V4ST5G, SZNZ9F2V4ST5G SERIES ELECTRICAL CHARACTERISTICS (VF = 0.9 Max @ IF = 10 mA for all types) Zener Voltage VZ ZZT IZ = IZT @ 10% Mod W Max ZZK IZ = 1.0 mA W Max Max IR @ VR dVZ/dt (mV/k) @ IZT1 = 5 mA IZK mA mA V Min Max CpF Max @ VR = 0 f = 1 MHz Device*** Device Marking Min Max Test Current Izt mA SZ, NZ9F2V4ST5G 2* 2.43 2.63 5 100 1000 1 50 1 −3.5 0 210 SZ, NZ9F2V7ST5G 3* 2.67 2.91 5 100 1000 1 20 1 −3.5 0 210 SZ, NZ9F3V0ST5G 4* 2.94 3.26 5 100 1000 1 10 1 −3.5 0 210 SZ, NZ9F3V3ST5G 5* 3.32 3.53 5 100 1000 1 10 1 −3.5 0 210 SZ, NZ9F3V6ST5G 6* 3.6 3.85 5 100 1000 1 10 1 −3.5 0 210 SZ, NZ9F3V9ST5G A** 3.89 4.16 5 100 1000 1 5 1 −3.5 −2.5 210 SZ, NZ9F4V3ST5G D** 4.17 4.43 5 100 1000 1 5 1 −3.5 0 210 SZ, NZ9F4V7ST5G E** 4.55 4.75 5 100 800 0.5 2 1 −3.5 0.2 150 SZ, NZ9F5V1ST5G F** 4.989 5.2 5 80 500 0.5 2 1.5 −2.7 1.2 130 SZ, NZ9F5V6ST5G J** 5.49 5.73 5 60 200 0.5 1 2.5 −2.0 2.5 115 SZ, NZ9F6V2ST5G K** 6.06 6.33 5 60 100 0.5 1 3 0.4 3.7 110 SZ, NZ9F6V8ST5G L** 6.65 6.93 5 40 60 0.5 0.5 3.5 1.2 4.5 105 SZ, NZ9F7V5ST5G P** 7.28 7.6 5 30 60 0.5 0.5 4 2.5 5.3 100 SZ, NZ9F8V2ST5G Q** 8.02 8.36 5 30 60 0.5 0.5 5 3.2 6.2 90 SZ, NZ9F9V1ST5G R** 8.85 9.23 5 30 60 0.5 0.5 6 3.8 7 80 SZ, NZ9F10VST5G T** 9.77 10.21 5 30 60 0.5 0.1 7 4.5 8 80 SZ, NZ9F11VST5G V** 10.76 11.22 5 30 60 0.5 0.1 8 5.4 9 80 SZ, NZ9F12VST5G Y** 11.74 12.24 5 30 80 0.5 0.1 9 6 10 80 SZ, NZ9F13VST5G 2** 12.91 13.49 5 37 80 0.5 0.1 10 7 11 75 SZ, NZ9F15VST5G 3** 14.34 14.98 5 42 80 0.5 0.1 11 9.2 13 70 SZ, NZ9F16VST5G 4** 15.85 16.51 5 50 80 0.5 0.1 12 10.4 14 65 SZ, NZ9F18VST5G 5** 17.56 18.35 5 50 80 0.5 0.1 14 12.4 16 60 *Rotated 90°. **Rotated 180°. ***SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. http://onsemi.com 3 NZ9F2V4ST5G, SZNZ9F2V4ST5G SERIES PACKAGE DIMENSIONS SOD−923 CASE 514AB ISSUE C −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− E 1 2X b 0.08 X Y 2 TOP VIEW DIM A b c D E HE L L2 A c HE MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.15 0.20 0.25 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.95 1.00 1.05 0.19 REF 0.05 0.10 0.15 INCHES MIN NOM MAX 0.013 0.015 0.016 0.006 0.008 0.010 0.003 0.005 0.007 0.030 0.031 0.033 0.022 0.024 0.026 0.037 0.039 0.041 0.007 REF 0.002 0.004 0.006 SIDE VIEW 2X SOLDERING FOOTPRINT* L 2X 0.36 2X 1.20 2X 0.25 L2 BOTTOM VIEW PACKAGE OUTLINE DIMENSIONS: MILLIMETERS See Application Note AND8455/D for more mounting details *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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