Panasonic LN66A Gaas infrared light emitting diode for optical control system Datasheet

Infrared Light Emitting Diodes
LNA2902L (LN66A(L))
GaAs infrared light emitting diode
Unit: mm
For optical control systems
7.65±0.2
1.0
1.5
2-0.8 max.
2.54
Rating
Unit
Power dissipation
PD
160
mW
Forward current (DC)
IF
100
mA
*
IFP
1.5
A
Reverse voltage (DC)
VR
3
V
Operating ambient temperature
Topr
−25 to +85
°C
Storage temperature
Tstg
−40 to +100
°C
0.5±0.15
Symbol
φ6.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
0.5±0.15
2-0.5±0.15
(1.5)
24.1±1
• High-power output, high-efficiency: Ie = 9 mW/sr (min.)
• Emitted light spectrum is suited for silicon photodetectors
• Good radiant power output linearity with respect to input current
• Wide directivity: θ = 20° (typ.)
• Transparent epoxy resin package
• Long lead-wire type
5.05±0.3
■ Features
Pulse forward current
φ6.0±0.2
Not soldered 2.0 max.
φ5.0±0.2
1
2
1: Anode
2: Cathode
Note) *: Less than f = 100 Hz, duty cycle = 0.1%
■ Electro-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Radiant intensity
Ie
IF = 50 mA
Total power output
PO
IF = 50 mA
12.0
mW
Peak emission wavelength
λP
IF = 50 mA
950
nm
Spectral band width
∆λ
IF = 50 mA
50
Forward voltage
VF
IF = 100 mA
1.4
VFP
IFP = 1.0 A
3.0
V
VR = 3 V
10
µA
Pulse forward voltage
*1
Reverse current
IR
9.0
mW/sr
nm
1.6
V
Total capacitance between terminals
Ct
VR = 0 V, f = 1 MHz
35
pF
Beal angle at 50% axial intensity
θ
The angle when the beam intensity is
halved.
20
°
Cut-off frequency *2
fC
1
MHz
Note) *1: Less than f = 100 Hz, duty cycle = 0.1%
PO at f = fC
*2: Cut-off frequency
fC: 10 × log
= −3
PO at f = 50 kHz
Note) The part number in the parenthesis shows conventional part number.
Publication date: October 2001
SHC00039AED
1
LNA2902L
IFP  Duty Cycle
102
80
60
40
20
0
20
40
60
80
1
10−1
10−2
10−3
10−2
100
10−1
Ambient temperature Ta (°C)
Forward voltage VF (V)
Relative radiant power output ∆PO
1
(2)
10−1
10−2
1
10
102
103
IF = 100 mA
50 mA
0.8
0.4
0
−40
104
0
40
1.2
80
120
IF = 50 mA
1
10−1
10−2
−40
0
40
Relative radiant intensity (%)
940
920
80
120
Spectral characteristics
Directivity characteristics
0°
IF = 50 mA
Ta = 25°C
80
80
70
60
60
50
40
40
30
20
20
10°
20°
100
90
960
2.0
Ambient temperature Ta (°C)
IF = 50 mA
980
1.6
Ambient temperature Ta (°C)
100
1 000
0.8
∆PO  Ta
10 mA
λP  Ta
Peak emission wavelength λP (nm)
0.4
Forward voltage VF (V)
10
1.2
Pulse forward current IFP (mA)
30°
40°
50°
60°
70°
80°
90°
900
−40
0
40
80
Ambient temperature Ta (°C)
2
0
102
10
VF  Ta
(1)
10
40
0
1
1.6
(1) tW = 10 µs
f = 100 Hz
(2) DC
Ta = 25°C
102
60
Duty cycle (%)
∆PO  IFP
103
80
20
Relative radiant power output ∆PO
0
−25
Ta = 25°C
100
10
Forward current IF (mA)
Pulse forward current IFP (A)
Forward current IF (mA)
100
IF  VF
120
tW = 10 µs
Ta = 25°C
Relative radiant intensity (%)
IF  T a
120
120
0
880
920
960
1 000
Wavelength λ (nm)
SHC00039AED
1 040
LNA2902L
Frequency characteristics
10
Ta = 25°C
Modulation output
1
10−1
10−2
10−3
10
102
103
104
Frequency f (kHz)
SHC00039AED
3
Caution for Safety
Gallium arsenide material (GaAs) is used
in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of
GaAs-containing products.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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Due to modification or other reasons, any information contained in this material, such as available product
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2001 MAR
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