AP50G60SW-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ.=2.6V@IC=33A ▼ Built-in Fast Recovery Diode ▼ RoHS Compliant & Halogen-Free VCES 600V IC 45A C G C TO-3P E G E Absolute Maximum Ratings Symbol Rating Parameter Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Voltage +30 V IC@TC=25oC Collector Current 75 A IC@TC=100oC Collector Current 45 A A ICM Pulsed Collector Current 150 IF@TC=25oC Diode Forward Current 40 A IF@TC=100oC Diode Forward Current 15 A PD@TC=25oC Maximum Power Dissipation 300 W TSTG Storage Temperature Range -55 to 150 o TJ Operating Junction Temperature Range 150 o TL Maximum Lead Temp. for Soldering Purposes 300 o C C C , 1/8" from case for 5 seconds . Notes: 1.Pulse width limited by max. junction temperature . Thermal Data Parameter Symbol Value Units Rthj-c Thermal Resistance Junction-Case 0.42 o C/W Rthj-c(Diode) Thermal Resistance Junction-Case 1.5 o C/W Rthj-a Thermal Resistance Junction-Ambient 40 o C/W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol IGES Parameter Gate-to-Emitter Leakage Current ICES Collector-Emitter Leakage Current VCE(sat) Collector-Emitter Saturation Voltage VGE(th) Gate Threshold Voltage Test Conditions VGE=+30V, VCE=0V Min. - Typ. - Max. +100 Units nA VCE=600V, VGE=0V - - 500 uA VGE=15V, IC=33A - 2.6 3 V VGE=15V, IC=50A - 3.1 3.5 V VCE=VGE, IC=250uA 2 - 6 V Qg Total Gate Charge IC=33A - 55 100 nC Qge Gate-Emitter Charge VCE=400V - 12 - nC Qgc Gate-Collector Charge - 27 - nC td(on) Turn-on Delay Time - 27 - ns tr Rise Time - 22 - ns td(off) Turn-off Delay Time - 110 - ns tf Fall Time VGE=15V VCE=390V, Ic=33A, VGE=15V, RG=5Ω, Inductive Load - 100 260 ns Eon Turn-On Switching Loss - 0.7 - mJ Eoff Turn-Off Switching Loss - 1.2 - mJ Cies Input Capacitance VGE=0V - 1250 2000 pF Coes Output Capacitance VCE=30V - 235 - pF Cres Reverse Transfer Capacitance f=1.0MHz - 7 - pF VF FRD Forward Voltage IF=15A - 1.3 1.7 V trr FRD Reverse Recovery Time IF=15A - 65 - ns Qrr FRD Reverse Recovery Charge di/dt = 200 A/μs - 230 - nC Data and specifications subject to change without notice 1 201303274 AP50G60SW-HF 240 16 IC , Collector Current (A) T C =25 C 200 VGE , Gate -Emitter Voltage (V) 20V 18V 15V o 160 120 12V 80 V GE =10V I C =33A V CC =250V V CC =300V V CC =400V 12 8 4 40 0 0 0 10 20 0 30 10 20 Fig 1. Typical Output Characteristics 50 60 5 V GE = 15 V V GE =15V T C =25 o C VCE(sat) ,Saturation Voltage(V) 80 IC , Collector Current(A) 40 Fig 2. Gate Charge Characterisitics 100 T C =150 o C 60 40 20 4 I C = 50 A I C =33A 3 2 1 0 0 2 4 6 0 8 40 80 120 160 Junction Temperature ( o C) V CE , Collector-Emitter Voltage (V) Fig 3. Typical Saturation Voltage Characteristics Fig 4. Typical Collector- Emitter Voltage v.s. Junction Temperature 1.6 f=1.0MHz 3000 1.2 Capacitance (pF) Normalized VGE(th) (V) 30 Q G , Gate Charge (nC) V CE , Collector-Emitter Voltage (V) 0.8 2000 C ies 1000 0.4 - 0 C oes C res 0 -50 0 50 100 150 Junction Temperature ( o C ) Fig 5. Gate Threshold Voltage 1 5 9 13 17 21 25 29 33 V CE , Collector-Emitter Voltage (V) Fig 6. Typical Capacitance Characterisitics v.s. Junction Temperature 2 AP50G60SW-HF 1 Normalized Thermal Response (Rthjc) 400 Power Dissipation (W) 300 200 100 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0 0 50 100 150 0.00001 200 0.001 0.01 0.1 1 10 Junction Temperature ( ℃ ) t , Pulse Width (s) Fig 7. Power Dissipation vs. Junction Temperature Fig 8. Effective Transient Thermal Impedance, Junction-to-Case (IGBT) 20 20 T C =25 o C o T C = 150 C I C = 50 A 33 A 15 A VCE , Collector-Emitter Voltage(V) VCE , Collector-Emitter Voltage(V) 0.0001 15 10 5 0 I C = 50 A 33 A 15 A 15 10 5 0 0 4 8 12 16 20 0 4 8 12 16 20 V GE , Gate-Emitter Voltage(V) V GE , Gate-Emitter Voltage(V) Fig 10. Saturation Voltage vs. VGE Fig 9. Saturation Voltage vs. VGE 1000 20 V GE =15V T C =125 o C T j =150 o C 12 IC ,Collctor Current(A) IF , Forward Current (A) 16 T j =25 o C 8 100 10 - 4 - Safe Operating Area 0 1 0 0.4 0.8 1.2 1.6 V F , Forward Voltage (V) Fig 11. Forward Characteristic of 2 1 10 100 1000 V CE ,Collector - Emitter Voltage(V) Fig 12. SOA Characteristics Diode 3