Mitsubishi CM75TU-12F High power switching use Datasheet

MITSUBISHI IGBT MODULES
CM75TU-12F
HIGH POWER SWITCHING USE
CM75TU-12F
¡IC ..................................................................... 75A
¡VCES ............................................................ 600V
¡Insulated Type
¡6-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
102
4–φ5.5
MOUNTING HOLES
80 ±0.25
20
10
CM
E
G
19.1
E
GuN
11 11.85
G
EuN
E
EuP
GvN
GvP
EvN
EvP
GwP
GwN
G
E
G
E
G
E
U
5–M4NUTS
Tc measured point
10
11
V
10
20
19.1
W
20
11
10
19.1
EwN
1.25
EwP
+1
3.05
11
29 –0.5
Tc measured point
P
4
2.8
0.5
11
8.1
7.1
GUP
LABEL
GVP
RTC
E UP
26
91
74 ±0.25
G
19.1
39.3
11
18.7
P
N
GuP
(4)
1.25
10
U
G UN
RTC
E UN
GWP
RTC
EVP
V
GVN
RTC
EVN
RTC
EWP
W
GWN
RTC
EWN
N
CIRCUIT DIAGRAM
Aug. 1999
MITSUBISHI IGBT MODULES
CM75TU-12F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
—
Torque strength
—
Weight
Conditions
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
(Note 2)
(Note 2)
Main terminal to base plate, AC 1 min.
Main Terminal M4
Mounting holes M5
Typical value
Ratings
Unit
600
±20
75
150
75
150
290
–40 ~ +150
–40 ~ +125
2500
1.3 ~ 1.7
2.5 ~ 3.5
570
V
V
A
A
W
°C
°C
V
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Parameter
Symbol
Test conditions
Limits
Typ.
—
Max.
1
Unit
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
Min.
—
VGE(th)
Gate-emitter threshold voltage
IC = 7.5mA, VCE = 10V
5
6
7
V
IGES
Gate leakage current
Collector-emitter saturation voltage
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Rth(c-f)
Rth(j-c’)Q
RG
Contact thermal resistance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.3
—
1.6
1.6
—
—
—
465
—
—
—
—
—
1.4
—
—
—
0.11
—
—
20
2.2
—
20
1.4
0.75
—
100
80
300
250
150
—
2.6
0.43
0.9
—
µA
VCE(sat)
VGE = VCES, VCE = 0V
Tj = 25°C
IC = 75A, VGE = 15V
Tj = 125°C
Thermal
resistance*1
Thermal resistance
External gate resistance
VCE = 10V
VGE = 0V
VCC = 300V, I C = 75A, VGE = 15V
VCC = 300V, IC = 75A
VGE1 = VGE2 = 15V
RG = 8.3Ω, Inductive load switching operation
IE = 75A
IE = 75A, VGE = 0V
IGBT part (1/6 module)
FWDi part (1/6 module)
Case to fin, Thermal compoundapplied*2 (1/6 module)
Tc measured point is just under the chips
0.34✽3
83
mA
V
nF
nC
ns
ns
µC
V
°C/W
Ω
Note 1. IE, VEC, t rr, Q rr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Tc measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Aug. 1999
MITSUBISHI IGBT MODULES
CM75TU-12F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
125
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
15
11
10
Tj=25°C
VGE=20V
9.5
100
9
75
8.5
50
8
25
7.5
CAPACITANCE Cies, Coes, Cres (nF)
0
0.5
1
1.5
2
2.5
3
3.5
3
VGE = 15V
2.5
2
1.5
1
Tj = 25°C
Tj = 125°C
0.5
0
4
0
50
100
150
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
5
Tj = 25°C
4
3
IC = 150A
2
IC = 75A
1
0
IC = 30A
6
8
10
12
14
16
18
3
2
102
7
5
3
2
101
7
5
3
2
100
20
0
0.5
1
1.5
2
2.5
3
3.5
4
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
102
103
7
5
7
5
3
2
3
2
Cies
101
7
5
3
2
100
7
5
3
2
Tj = 25°C
7
5
EMITTER CURRENT IE (A)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
0
Coes
Cres
VGE = 0V
10–1 –1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
COLLECTOR-EMITTER VOLTAGE VCE (V)
SWITCHING TIMES (ns)
COLLECTOR CURRENT IC (A)
150
102
7
5
3
2
101
7
5
3
2
td(off)
tf
td(on)
tr
Conditions:
VCC = 300V
VGE = ±15V
RG = 8.3Ω
Tj = 125°C
100 0
10 2 3 5 7101 2 3 5 7102 2 3 5 7103
COLLECTOR CURRENT IC (A)
Aug. 1999
MITSUBISHI IGBT MODULES
CM75TU-12F
HIGH POWER SWITCHING USE
102
7
5
3
trr
2
Irr
101
7
5
Conditions:
VCC = 300V
VGE = ±15V
RG = 8.3Ω
Tj = 25°C
3
2
100 0
10
2
3
5 7 101
2
3
5 7 102
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j–c) (°C/W)
REVERSE RECOVERY TIME trr (ns)
REVERSE RECOVERY CURRENT lrr (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
101
7 IGBT part:
5 Per unit base = Rth(j–c) = 0.43°C/W
3 FWDi part:
2 Per unit base = Rth(j–c) = 0.9°C/W
100
7
5
3
2
3
2
10–1
10–1
10–2
10–2
7
5
3
2
7
5
3
2
10–3
7
5
3
2
7
5
3
2
Single Pulse
TC = 25°C
10–3
10–5 2 3 5 710–4 2 3 5 7 10–3
TMIE (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
20
IC = 75A
18
VCC = 200V
16
14
VCC = 300V
12
10
8
6
4
2
0
0
100 200 300 400 500 600 700
GATE CHARGE QG (nC)
Aug. 1999
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