MITSUBISHI IGBT MODULES CM75TU-12F HIGH POWER SWITCHING USE CM75TU-12F ¡IC ..................................................................... 75A ¡VCES ............................................................ 600V ¡Insulated Type ¡6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 102 4–φ5.5 MOUNTING HOLES 80 ±0.25 20 10 CM E G 19.1 E GuN 11 11.85 G EuN E EuP GvN GvP EvN EvP GwP GwN G E G E G E U 5–M4NUTS Tc measured point 10 11 V 10 20 19.1 W 20 11 10 19.1 EwN 1.25 EwP +1 3.05 11 29 –0.5 Tc measured point P 4 2.8 0.5 11 8.1 7.1 GUP LABEL GVP RTC E UP 26 91 74 ±0.25 G 19.1 39.3 11 18.7 P N GuP (4) 1.25 10 U G UN RTC E UN GWP RTC EVP V GVN RTC EVN RTC EWP W GWN RTC EWN N CIRCUIT DIAGRAM Aug. 1999 MITSUBISHI IGBT MODULES CM75TU-12F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Torque strength — Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M4 Mounting holes M5 Typical value Ratings Unit 600 ±20 75 150 75 150 290 –40 ~ +150 –40 ~ +125 2500 1.3 ~ 1.7 2.5 ~ 3.5 570 V V A A W °C °C V N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C) Parameter Symbol Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 7.5mA, VCE = 10V 5 6 7 V IGES Gate leakage current Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Rth(c-f) Rth(j-c’)Q RG Contact thermal resistance — — — — — — — — — — — — — — — — — — 8.3 — 1.6 1.6 — — — 465 — — — — — 1.4 — — — 0.11 — — 20 2.2 — 20 1.4 0.75 — 100 80 300 250 150 — 2.6 0.43 0.9 — µA VCE(sat) VGE = VCES, VCE = 0V Tj = 25°C IC = 75A, VGE = 15V Tj = 125°C Thermal resistance*1 Thermal resistance External gate resistance VCE = 10V VGE = 0V VCC = 300V, I C = 75A, VGE = 15V VCC = 300V, IC = 75A VGE1 = VGE2 = 15V RG = 8.3Ω, Inductive load switching operation IE = 75A IE = 75A, VGE = 0V IGBT part (1/6 module) FWDi part (1/6 module) Case to fin, Thermal compoundapplied*2 (1/6 module) Tc measured point is just under the chips 0.34✽3 83 mA V nF nC ns ns µC V °C/W Ω Note 1. IE, VEC, t rr, Q rr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Aug. 1999 MITSUBISHI IGBT MODULES CM75TU-12F HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 125 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 15 11 10 Tj=25°C VGE=20V 9.5 100 9 75 8.5 50 8 25 7.5 CAPACITANCE Cies, Coes, Cres (nF) 0 0.5 1 1.5 2 2.5 3 3.5 3 VGE = 15V 2.5 2 1.5 1 Tj = 25°C Tj = 125°C 0.5 0 4 0 50 100 150 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 5 Tj = 25°C 4 3 IC = 150A 2 IC = 75A 1 0 IC = 30A 6 8 10 12 14 16 18 3 2 102 7 5 3 2 101 7 5 3 2 100 20 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 103 7 5 7 5 3 2 3 2 Cies 101 7 5 3 2 100 7 5 3 2 Tj = 25°C 7 5 EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 0 Coes Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A) 150 102 7 5 3 2 101 7 5 3 2 td(off) tf td(on) tr Conditions: VCC = 300V VGE = ±15V RG = 8.3Ω Tj = 125°C 100 0 10 2 3 5 7101 2 3 5 7102 2 3 5 7103 COLLECTOR CURRENT IC (A) Aug. 1999 MITSUBISHI IGBT MODULES CM75TU-12F HIGH POWER SWITCHING USE 102 7 5 3 trr 2 Irr 101 7 5 Conditions: VCC = 300V VGE = ±15V RG = 8.3Ω Tj = 25°C 3 2 100 0 10 2 3 5 7 101 2 3 5 7 102 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.43°C/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.9°C/W 100 7 5 3 2 3 2 10–1 10–1 10–2 10–2 7 5 3 2 7 5 3 2 10–3 7 5 3 2 7 5 3 2 Single Pulse TC = 25°C 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 75A 18 VCC = 200V 16 14 VCC = 300V 12 10 8 6 4 2 0 0 100 200 300 400 500 600 700 GATE CHARGE QG (nC) Aug. 1999