Zowie MMBD2837G Monolithic dual switching diode Datasheet

Zowie Technology Corporation
Monolithic Dual Switching Diodes
Lead free product
FETURE
z We declare that the material of product
compliance with RoHS requirements.
3
MMBD2837G
MMBD2838G
ANODE
1
CATHODE
3
1
2
ANODE
2
SOT-23
MAXIMUM RATINGS(EACH DIODE)
Rating
Peak Reverse Voltage
D.C Reverse Voltage
MMBD2837G
MMBD2838G
Symbol
V RM
VR
Peak Forward Current
I FM
Average Rectified Current
IO
Value
75
Unit
Vdc
Vdc
30
50
450
300
150
mAdc
mAdc
100
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board (1)
T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
Unit
mW
R θ JA
PD
1.8
556
300
mW/°C
°C/W
mW
R θ JA
T J , T stg
2.4
417
–55 to +150
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) ( EACH DIODE )
Characteristic
Symbol
Min
Max
Unit
V (BR)
35
—
Vdc
—
IR
75
—
—
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I (BR) = 100µAdc) MMBD2837G
MMBD2838G
Reverse Voltage Leakage Current
(V R = 30 Vdc)
(V R = 50 Vdc)
MMBD2837G
MMBD2838G
Diode Capacitance
CT
(V R = 0 V, f = 1.0 MHz)
Forward Voltage(I F = 10 mAdc)
VF
(I F = 50 mAdc)
(I F = 100 mAdc)
Reverse Recovery Time(I F=I R=10mAdc,I R(REC)=1.0mAdc)(Figure 1) t rr
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
REV. 0
µAdc
0.1
0.1
—
4.0
pF
—
—
—
—
1.0
1.0
1.2
4.0
Vdc
ns
Zowie Technology Corporation
Zowie Technology Corporation
MMBD2837G
MMBD2838G
+10 V
2.0 k
820 Ω
100 µH
IF
tp
tr
0.1µF
IF
t
t rr
10%
0.1 µF
t
90%
DUT
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
50 Ω OUTPUT
PULSE
GENERATOR
i
IR
INPUT SIGNAL
V
R(REC)
= 1.0 mA
OUTPUT PULSE
(I F = I R = 10 mA; MEASURED
at i R(REC) = 1.0 mA)
R
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA.
Notes: 3. t p » t rr
Figure 1. Recovery Time Equivalent Test Circuit
CURVES APPLICABLE TO EACH CATHODE
10
T A = 85°C
I R, REVERSE CURRENT ( µA)
I F , FORWARD CURRENT (mA)
100
T A= –40°C
10
T A = 25°C
1.0
T A =150°C
T A =125°C
1.0
T A =85°C
0.1
T A =55°C
0.01
T A =25°C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
0
1.2
10
20
30
40
V F , FORWARD VOLTAGE (VOLTS)
V R , REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
50
C D , DIODE CAPACITANCE (pF)
1.0
0.9
0.8
0.7
0.6
0
2.0
4.0
6.0
8.0
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
REV. 0
Zowie Technology Corporation
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