BAV23A/C/S SOT-23 Plastic-Encapsulate Diodes Switching Diodes Features SOT- 23 ● Fast Switching Speed ● High Conductance ● For General Purpose Switching Applications 3 Marking: 2 BAV23A MARKING:KT7 BAV23S BAV23C MARKING KT6 1 MARKING:KL31 Symbol Parameter Value Unit 250 V RMS Reverse Voltage 175 V Average Rectified Output Current 225 mA IFSM Non-repetitive Peak Forward Surge Current @ t= 8.3ms 1.7 A PD Power Dissipation 350 mW Thermal Resistance from Junction to Ambient 357 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ VRRM Peak Repetitive Reverse Voltage VRWM Working Peak Reverse Voltage VR(RMS) IO RΘJA Electrical Characteristics (Ta=25℃ Unless otherwise specified） Parameter Symbol Test conditions Min Typ Max Reverse voltage V(BR) IR=100μA Reverse current IR VR=250V 0.1 Forward voltage VF IF=100mA 1 IF=200mA 1.25 Total capacitance Ctot Reverse recovery time trr 250 Unit V μA V VR=0V,f=1MHz 5 pF IF= IR=30mA, Irr=0.1×IR, RL=100Ω 50 ns High Diode Semiconductor 1 Typical Characteristics Forward Characteristics Characteristics Reverse 1000 300 Pulsed Pulsed (nA) (mA) 100 REVERSE CURRENT IR ℃ T= a 2 5 FORWARD CURRENT T= a 1 00 ℃ IF 10 1 0.1 0.01 0.2 Ta=100℃ 100 10 Ta=25℃ 1 0.4 0.6 0.8 FORWARD VOLTAGE 1.0 VF 0 1.2 50 (V) 100 150 REVERSE VOLTAGE 200 250 (V) VR Power Derating Curve Capacitance Characteristics 1.6 400 (mW) f=1MHz 350 300 PD 1.4 1.2 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ 1.0 0.8 0.6 250 200 150 100 50 0 0 4 8 12 REVERSE VOLTAGE 16 VR (V) 20 0 25 50 75 100 AMBIENT TEMPERATURE High Diode Semiconductor 125 Ta 150 (℃) 2 SOT-23 Package Outline Dimensions SOT-23 Suggested Pad Layout JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Devices-SOT-23 30 High Diode Semiconductor 4