PD - 96342
AUTOMOTIVE GRADE
AUIRFR5505
AUIRFU5505
Features
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Advanced Planar Technology
Low On-Resistance
P-Channel
Dynamic dV/dT Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
HEXFET® Power MOSFET
D
V(BR)DSS
RDS(on) max.
G
S
ID
0.11Ω
-18A
D
D
Description
Specifically designed for Automotive applications, this
Cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the
fast switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
-55V
G
D
S
G
D
S
I-Pak
AUIRFU5505
D-Pak
AUIRFR5505
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max.
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
c
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy(Thermally limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
c
d
c
e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Units
-18
-11
-64
57
0.45
± 20
150
-9.6
5.7
-5.0
A
W
W/°C
V
mJ
A
mJ
V/ns
-55 to + 150
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
–––
2.2
50
110
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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AUIRFR/U5505
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
Parameter
-55
–––
–––
V
Conditions
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
-0.049
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.11
Ω
VGS = -10V, ID = -9.6A
VGS(th)
Gate Threshold Voltage
-2.0
–––
-4.0
V
VDS = VGS, ID = -250µA
gfs
IDSS
Forward Transconductance
4.2
–––
–––
S
VDS = -25V, ID = -9.6A
Drain-to-Source Leakage Current
–––
–––
-25
µA
VDS = -55V, VGS = 0V
–––
–––
-250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = 0V, ID = -250µA
V/°C Reference to 25°C, ID = -1mA
f
h
VDS = -44V, VGS = 0V, TJ = 150°C
nA
VGS = -20V
VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
–––
–––
32
Qgs
Gate-to-Source Charge
–––
–––
7.1
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
15
VGS = -10V,See Fig 6 and 13
td(on)
Turn-On Delay Time
–––
12
–––
VDD = -28V
tr
Rise Time
–––
28
–––
td(off)
Turn-Off Delay Time
–––
20
–––
tf
Fall Time
–––
16
–––
LD
Internal Drain Inductance
–––
4.5
–––
–––
7.5
–––
–––
650
–––
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
–––
270
–––
Crss
Reverse Transfer Capacitance
–––
120
–––
Min.
Typ.
Max.
ID = -9.6A
nC
VDS = -44V
f
ID = -9.6A
ns
RG = 2.6 Ω
RD = 2.8Ω, See Fig.10
Between lead,
nH
f
D
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
pF
S
VDS = -25V
ƒ = 1.0MHz,see Fig.5
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
Units
–––
–––
-18
(Body Diode)
Diode Forward Voltage
–––
–––
-64
–––
–––
-1.6
trr
Reverse Recovery Time
–––
51
77
ns
Qrr
Reverse Recovery Charge
–––
110
160
nC
ton
Forward Turn-On Time
c
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 2.8mH
RG = 25Ω, IAS = -6.6A (See Figure 12)
ISD ≤ -6.6A, di/dt ≤ -240A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Conditions
MOSFET symbol
A
V
D
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = -9.6A, VGS = 0V
TJ = 25°C, IF = -9.6A
di/dt = 100A/µs
f
S
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
Uses IRF9Z24N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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AUIRFR/U5505
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
MSL1
D PAK
I-PAK
N/A
Class M3 (250V)
( per AEC-Q101-002)
ESD
Human Body Model
(per AEC-Q101-001)
Charged Device
Model
RoHS Compliant
Class H1B (800V)
Class C5 (2000V)
(per AEC-Q101-005)
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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AUIRFR/U5505
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AUIRFR/U5505
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AUIRFR/U5505
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AUIRFR/U5505
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14 For P Channel HEXFETS
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AUIRFR/U5505
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
Part Number
AUFR5505
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRFR/U5505
I-Pak (TO-251AA) Package Outline
( Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
Part Number
AUFU5505
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFR/U5505
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
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AUIRFR/U5505
Ordering Information
Base part
Package Type
AUIRFR5505
DPak
AUIRFU5505
IPak
12
Complete Part Number
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
Quantity
75
2000
3000
3000
75
AUIRFR5505
AUIRFR5505TR
AUIRFR5505TRL
AUIRFR5505TRR
AUIRFU5505
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AUIRFR/U5505
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provide adequate design and operating safeguards.
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service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive
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IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into
the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR
product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for
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employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and
reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such
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IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the
designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications,
IR will not be responsible for any failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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