MSS40 / 50 Series BACK TO BACK SCR MODULE MAIN FEATURES: Symbol Value Unit IT(RMS) 55 and 70 A VDRM/VRRM 800 and 1200 V IGT 50 mA A2 G1 G2 DESCRIPTION Packaged in ISOTOP modules, the MSS40 / MSS50 Series is based on two back-to-back SCR configurations, providing high noise immunity. They are suitable for high power applications such as solid state relays, heating control systems, welding equipment, motor control circuits... The compactness of the ISOTOP package allows high power density and optimized power bus connections. Thanks to their internal ceramic pad, they provide high voltage insulation (2500V RMS), complying with UL standards (File ref: E81734). A1 ISOTOP® PIN CONNECTIONS G1 4 1: Thyristor 2 Anode (A2) 3 2: Thyristor 2 Gate (G2) A1 3: Thyristor 1 Anode (A1) 4: Thyristor 1 Gate (G1) 1 A2 2 G2 ABSOLUTE RATINGS (limiting values) Symbol Parameter Value MSS40 IT(RMS) ITSM I²t dI/dt IGM PG(AV) RMS on-state current Non repetitive surge peak on-state current I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Tc = 80 °C Tc = 85 °C tp = 16.7 ms Tj = 25°C tp = 20 ms tp = 10 ms Tj = 25°C F = 120 Hz Tj = 125°C tp = 20 µs Average gate power dissipation Unit MSS50 55 420 400 70 630 600 800 1800 50 A A A2S A/µs Tj = 125°C 4 A Tj = 125°C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C VRGM Maximum peak reverse gate voltage 5 V 资料提供：可控硅在线 ｈｔｔｐ：／／ｗｗｗ．ｋｋｇ．ｃｏｍ．ｃｎ www.kersemi.com 1/5 MSS40 / 50 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Value Test Conditions MSS40 IGT VD = 12 V MIN. 5 MAX. 50 MAX. 1.3 V MIN. 0.2 V MAX. 80 mA MAX. 120 mA Tj = 125°C MIN. 1000 V/µs Tj = 25°C MAX. RL = 33 Ω VGT VGD VD = VDRM RL = 3.3 kΩ IH IT = 500 mA Gate open IL IG = 1.2 IGT dV/dt VTM VD = 67 % VDRM Tj = 125°C Gate open ITM = 80 A tp = 380 µs ITM = 100 A tp = 380 µs Vt0 Threshold voltage Tj = 125°C MAX. Rd Dynamic resistance Tj = 125°C MAX. Tj = 25°C MAX. IDRM IRRM VDRM / VRRM RATED Unit MSS50 mA 1.7 - - 1.7 V 0.85 11 Tj = 125°C V 7 mΩ 20 µA 10 mA THERMAL RESISTANCES Symbol Rth(j-c) Parameter Junction to case (AC) Value Unit MSS40 0.6 °C/W MSS50 0.45 PRODUCT SELECTOR Voltage (xxx) Part Number Sensitivity Package X 50 mA ISOTOPTM X 50 mA ISOTOPTM 800 V 1200 V MSS40-xxx X MSS50-xxx X ORDERING INFORMATION MSS 40 - 800 SCR MODULE SERIES VOLTAGE: 800: 800V 1200: 1200V CURRENT: 40: 55A 50: 70A 2/5 资料提供：可控硅在线 ｈｔｔｐ：／／ｗｗｗ．ｋｋｇ．ｃｏｍ．ｃｎ www.kersemi.com MSS40 / 50 Series OTHER INFORMATION Part Number Marking Weight Base Quantity Packing mode MSS40-xxx MSS40-xxx 27.0 g 10 Tube MSS50-xxx MSS50-xxx 27.0 g 10 Tube Note: xxx = voltage Fig. 1: Maximum power dissipation versus RMS on-state current. Fig. 2: RMS on-state current versus case temperature. P(W) 100 90 80 70 60 50 40 30 20 10 0 IT(RMS)(A) 80 α = 180° MSS50 α =180° MSS50 70 60 MSS40 MSS40 50 40 30 180° 20 α α IT(RMS)(A) 0 10 20 30 40 50 60 10 70 80 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 0 Tcase(°C) 0 25 50 75 100 125 150 Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). K = [Zth(j-c)/Rth(j-c)] IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C] 1.0 2.5 2.0 IGT 0.5 1.5 IH & IL 1.0 0.2 0.5 Tj(°C) tp(s) 0.1 1E-3 1E-2 1E-1 1E+0 1E+1 0.0 -40 -20 资料提供：可控硅在线 ｈｔｔｐ：／／ｗｗｗ．ｋｋｇ．ｃｏｍ．ｃｎ www.kersemi.com 0 20 40 60 80 100 120 140 160 3/5 MSS40 / 50 Series Fig. 5: Surge peak on-state current versus number of cycles. Fig. 6:Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t. ITSM(A) ITSM(A), I2t(A2S) 700 5000 MSS50 600 t = 20ms Non repetitiv e Tj initial = 25 °C 500 One cycle MSS40 400 1000 MSS50 Repetitive Tcase = 85 °C 300 200 MSS40 Repetitive Tcase = 80 °C 100 0 1 Number of cycles 10 100 0.01 100 Fig. 7-1: On-state characteristics (maximum values) (MSS40). 1.00 10.00 Fig. 7-2: On state characteristics (maximum values) (MSS50). ITM(A) ITM(A) 500 0.10 1000 Tj max.: Vto = 0.85V Rd = 11m Ω Tj = Tjmax. Tj max.: Vto = 0.85V Rd = 7mΩ Tj = Tjmax. 100 100 Tj = 25°C Tj = 25°C VTM(V) 10 0.0 4/5 1.0 2.0 3.0 VTM(V) 4.0 5.0 6.0 10 0.0 1.0 资料提供：可控硅在线 ｈｔｔｐ：／／ｗｗｗ．ｋｋｇ．ｃｏｍ．ｃｎ www.kersemi.com 2.0 3.0 4.0 5.0 6.0 MSS40 / 50 Series PACKAGE MECHANICAL DATA ISOTOP™ DIMENSIONS REF. Millimeters A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Min. ■ ■ Max. Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 0.976 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951 typ. 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193 Recommended torque value: 1.3 Nm (max. 1.5 Nm) for the 6 x M4 screws (2 x M4 screws recommended for mounting the package on the heatsink and the 4 provided screws. The screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min. and 2.2 mm max. 资料提供：可控硅在线 ｈｔｔｐ：／／ｗｗｗ．ｋｋｇ．ｃｏｍ．ｃｎ 5/5 www.kersemi.com