Direct Attach DA700™ LEDs CxxxDA700-Sxx000 Data Sheet Cree’s Direct Attach DA700 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting and general-illumination markets. The DA700 LEDs are among the brightest in the lighting market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The bondpad-down design allows for eutectic die attach, eliminating the need for wire bonds, and enables superior performance from improved thermal management. FEATURES APPLICATIONS • Direct Attach LED Technology • • Rectangular LED RF Performance − Aircraft – − Decorative Lighting 450 & 460 nm – 430 mW min General Illumination • High Reliability - Eutectic Attach − Task Lighting • Low Forward Voltage (Vf) – 3.3 V Typical at 350 mA − Outdoor Illumination • Maximum DC Forward Current – 750 mA • White LEDs • InGaN Junction-Down Design for Improved Thermal • Camera Flash Management • Projection Displays No Wire Bonds Required • Automotive • Large LCD Backlighting • – Television CxxxDA700-Sxx000 Chip Diagram .CPR3EU Rev Data Sheet: Top View Die Cross Section DA700 LED 700 x 700 μm Bottom View Anode (+) 645 x 75 μm Gap 75 μm Cathode (-) 645 x 495 μm t = 335 μm Subject to change without notice. www.cree.com 1 Maximum Ratings at TA = 25°C Notes 1, 2 & 3 CxxxDA700-Sxx000 DC Forward Current 750 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 1000 mA LED Junction Temperature 150°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +100°C Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA Part Number Note 2 Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450DA700-Sxx000 2.9 3.3 3.5 2 20 C460DA700-Sxx000 2.9 3.3 3.5 2 21 Mechanical Specifications CxxxDA700-Sxx000 Description Dimension Tolerance P-N Junction Area (μm) 645 x 645 ±35 Chip Bottom Area (μm) 700 x 700 ±35 Chip Top Area (μm) 340 x 340 ±35 Chip Thickness (μm) 335 ±25 AuSn Bond Pad Width – Anode (um) 75 ±15 AuSn Bond Pad Length – Anode (um) 645 ±35 AuSn Bond Pad Width – Cathode (um) 495 ±35 AuSn Bond Pad Length – Cathode (um) 645 ±35 75 ±15 3 ±0.5 Bond Pad Gap (μm) AuSn Bond Pad Thickness (μm) Notes: 1. 2. 3. Maximum ratings are package-dependent. The above ratings were determined using a Cree 3.45-mm x 3.45-mm SMT package (with silicone encapsulation and intrinsic AuSn metal die attach) for characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1¾ packages (with Hysol OS4000 epoxy encapsulant and intrinsic AuSn metal die attach). Optical characteristics measured in an integrating sphere using Illuminance E. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. 800 Maximum Forward Current (mA) 700 600 500 400 Rth j-a = 10 Rth j-a = 15 Rth j-a = 20 Rth j-a = 25 300 200 100 C/W C/W C/W C/W 0 25 50 75 100 125 150 175 Ambient Temperature (C) Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA700 are trademarks of Cree, Inc. 2 CPR3EU Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxDA700-Sxx000 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxDA700-Sxxxxx) orders may be filled with any or all bins (CxxxDA700-xxxxx) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Radiant Flux (mW) C450DA700-S43000 C450DA700-0217 C450DA700-0218 C450DA700-0219 C450DA700-0220 C450DA700-0213 C450DA700-0214 C450DA700-0215 C450DA700-0216 C450DA700-0209 C450DA700-0210 C450DA700-0211 C450DA700-0212 C450DA700-0205 C450DA700-0206 C450DA700-0207 C450DA700-0208 515 485 455 430 445 447.5 450 452.5 455 Dominant Wavelength (nm) Radiant Flux (mW) C460DA700-S43000 C460DA700-0217 C460DA700-0218 C460DA700-0219 C460DA700-0220 C460DA700-0213 C460DA700-0214 C460DA700-0215 C460DA700-0216 C460DA700-0209 C460DA700-0210 C460DA700-0211 C460DA700-0212 C460DA700-0205 C460DA700-0206 C460DA700-0207 C460DA700-0208 515 485 455 430 455 457.5 460 462.5 465 Dominant Wavelength (nm) Note: The radiant-flux values above are representative of the die in a T-1¾ encapsulated 5-mm lamp. Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA700 are trademarks of Cree, Inc. 3 CPR3EU Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com DW Shift ( 0 -1 -2 Characteristic Curves 0 100 200 300 400 500 600 700 If (mA) These are representative measurements for the DA LED product. Actual curves will vary slightly for the various radiant Relative Light Intensity Vs Junction Temperature flux and dominant wavelength bins. 100% Wavelength Shift vs. Forward Current Forward Current vs. Forward Voltage 95% 2 Relative Intensity DW Shift (nm) 700 600 If (mA) 500 400 300 200 90% 1 85% 80% 0 75% -1 70% 25 100 0 50 1 2 3 4 5 100 125 150 Junction Temperature (°C) -2 0 75 0 100 200 300 Vf (V) 400 500 600 700 If (mA) Relative Intensity vs. Forward Current Dominant Wavelength Shift Vs Junction Temperature 200% 6 Forward Current vs. Forward Voltage 175% 700 Shift (nm) IfDW (mA) Relative Intensity 150% 125% 100% 75% 5 600 4 500 3 400 2 50% 300 25% 200 1 100 0 0% 0 100 200 300 400 500 600 25 700 0 If (mA) 75 100 125 2 3 (°C) Junction Temperature 1 150 4 5 Vf (V) Voltage Shift Vs Junction Temperature Relative Light Intensity Vs Junction Temperature 0.000 100% Wavelength Shift vs. Forward Current 95% 2 -0.050 -0.100 Voltage Shift (V) Relative DW Shift (nm) Intensity 50 0 90% 1 85% 80% 0 -0.150 -0.200 -0.250 -0.300 75% -0.350 -1 70% -0.400 25 50 75 100 125 150 Junction Temperature (°C) -2 0 100 200 300 400 500 25 50 75 100 125 150 Junction Temperature (°C) 600 700 If (mA) Dominant Wavelength Shift Vs Junction Temperature Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA700 are trademarks of Cree, Inc. 6 4 5 CPR3EU Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com DA700 blue Radiation Pattern This is a representative radiation pattern for the DA LED product. Actual patterns will vary slightly for each chip. Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and DA and DA700 are trademarks of Cree, Inc. 5 CPR3EU Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com