Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR30100C Main Product Characteristics General Description High voltage dual schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. IF(AV) 2*15A VRRM 100V TJ 150°C VF(max) 0.75V The MBR30100C is available in standard TO-220-3, TO-220-3(2) and TO-220F-3 packages. Mechanical Characteristics • • • Features • • • • • High Surge Capacity 150°C Operating Junction Temperature 30A Total (15 A Per Diode Leg) Guard-Ring foe Stress Protection Pb- Free Packages are available • • • Case: Epoxy, Molded Epoxy Meets UL 94 V-0@ 0.125 in Weight (Approximately): 1.9 Grams (TO-220-3, TO-220-3(2) TO-220F-3) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Applications TO-220F-3 • • • Power Supply − Output Rectification Power Management Instrumentation TO-220-3 TO-220-3 (2) Figure 1. Package Type of MBR30100C Apr. 2009 Rev. 1.1 BCD Semiconductor Manufacturing Limited 1 and Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR30100C Pin Configuration T Package (TO-220-3) (TO-220-3(2)) 3 A2 2 K 1 A1 TF Package (TO-220F-3) Figure 2. Pin Configuration of MBR30100C (Top View) Figure 3. Internal Structure of MBR30100C Apr. 2009 Rev. 1.1 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR30100C Ordering Information MBR30100C - Circuit Type E1: Lead Free G1: Green Blank: Tube Package T: TO-220-3/TO-220-3(2) TF: TO-220F-3 Package TO-220-3/ TO-220-3(2) TO-220F-3 Part Number Marking ID Lead Free Green Lead Free Green MBR30100CTE1 MBR30100CTF -E1 MBR30100CTG1 MBR30100CTF -G1 MBR30100CTE1 MBR30100CTF -E1 MBR30100CTG1 MBR30100CTF G1 Packing Type Tube Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with “G1” suffix are available in green packages. Absolute Maximum Ratings ( Per Diode Leg) (Note 1) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 126°C Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 126°C Non repetitive Peak Surge Current (Surge applied at rated load conditions half wave, single phase, 60Hz) Operating Junction Temperature Range（Note 2） VRRM VRWM VR 100 V IF(AV) 15 A IFRM 30 A IFSM 200 A TJ 150 °C Storage Temperature Range TSTG -55 to 150 °C Voltage Rate of Change (Rated VR) dv/dt 10000 > 400 > 8000 V/µs ESD Ratings: Machine Model = C Human Body Model =3B V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/θJA. Apr. 2009 Rev. 1.1 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR30100C Recommended Operating Conditions Parameter Symbol Condition θJC Junction to Case θJA Junction to Ambient Value Maximum Thermal Resistance Unit TO-220-3/ TO-220-3(2) 2.5 TO-220F-3 4.5 TO-220-3/ TO-220-3(2) 60 TO-220F-3 60 °C/W Electrical Characteristics Parameter Maximum Instantaneous Forward Voltage Drop (Note 3) Maximum Instantaneous Reverse Current (Note 3) Symbol VF IR Conditions Value IF=15A, TC=25°C 0.85 IF=15A, TC=125°C 0.75 IF=30 A, TC=25°C 0.95 IF=30A, TC=125°C 0.85 Rated DC TC=125°C Voltage, 6.0 Rated DC TC=25°C Voltage, Units V mA 0.1 Note 3: Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%. Apr. 2009 Rev. 1.1 BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR30100C Typical Performance Characteristics 100 10000 10 Reverse Current (µA) TJ=150°C TJ=125°C 1 0.1 0.01 0.1 TJ=125°C 100 10 1 TJ=25°C 0.1 TJ=25°C 0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 Instantaneous Forward Voltage (V) 40 60 80 Reverse Voltage (V) Figure 4. Typical Forward Voltage Per Diode Figure 5. Typical Reverse Current Per Diode 30 28 26 Average Forward Current (A) Instantaneous Forward Current (A) TJ=150°C 1000 24 22 20 18 16 14 12 10 8 6 4 2 0 100 105 110 115 120 125 130 135 140 145 150 155 Case Temperature (°C) Figure 6. Average Forward Current vs. Case Temperature (Square, Per Diode) Apr. 2009 Rev. 1.1 BCD Semiconductor Manufacturing Limited 5 100 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR30100C Mechanical Dimensions TO-220-3 9.660(0.380) 10.660(0.420) φ3.560(0.140) 4.060(0.160) Unit: mm(inch) 2.580(0.102) 3.380(0.133) 0.550(0.022) 1.350(0.053) 0.200(0.008) 7° φ1.500(0.059) 3.560(0.140) 4.820(0.190) 2.080(0.082) 2.880(0.113) 3° 1.160(0.046) 1.760(0.069) 7° 0.381(0.015) 60° 0.813(0.032) 8.763(0.345) 60° 0.381(0.015) 2.540(0.100) 2.540(0.100) Apr. 2009 Rev. 1.1 0.356(0.014) 0.406(0.016) BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR30100C Mechanical Dimensions TO-220-3(2) Unit: mm(inch) 9.800(0.386) 10.200(0.402) 1.700(0.067) ∅ 3.560(0.140) 3.640(0.143) 0.600(0.024) 1.300(0.051) 1.300(0.051) 3° 4.500(0.177) 2.400(0.094) 3° 3° 1.270(0.050) 0.700(0.028) 0.900(0.035) 2.540(0.100) 0.400(0.016) 0.600(0.024) 2.540(0.100) Apr. 2009 Rev. 1.1 BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR30100C Mechanical Dimensions (Continued) TO-220F-3 9.700(0.382) 10.300(0.406) 3.000(0.119) 3.550(0.140) 3.000(0.119) 3.400(0.134) 6.900(0.272) 7.100(0.280) Unit: mm(inch) 2.350(0.093) 2.900(0.114) 3.370(0.133) 3.900(0.154) 14.700(0.579) 16.000(0.630) 4.300(0.169) 4.900(0.075) 2.790(0.110) 4.500(0.177) 1.000(0.039) 1.400(0.055) 1.100(0.043) 1.500(0.059) 12.500(0.492) 13.500(0.531) 0.550(0.022) 0.900(0.035) 2.540(0.100) 2.540(0.100) Apr. 2009 Rev. 1.1 0.450(0.018) 0.600(0.024) BCD Semiconductor Manufacturing Limited 8 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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