BCD MBR30100C High voltage power schottky rectifier Datasheet

Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30100C
Main Product Characteristics
General Description
High voltage dual schottky rectifier suited for switch
mode power supplies and other power converters.
This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are
required.
IF(AV)
2*15A
VRRM
100V
TJ
150°C
VF(max)
0.75V
The MBR30100C is available in standard TO-220-3,
TO-220-3(2) and TO-220F-3 packages.
Mechanical Characteristics
•
•
•
Features
•
•
•
•
•
High Surge Capacity
150°C Operating Junction Temperature
30A Total (15 A Per Diode Leg)
Guard-Ring foe Stress Protection
Pb- Free Packages are available
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94 V-0@ 0.125 in
Weight (Approximately):
1.9 Grams (TO-220-3, TO-220-3(2)
TO-220F-3)
Finish: All External Surfaces Corrosion
Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Applications
TO-220F-3
•
•
•
Power Supply − Output Rectification
Power Management
Instrumentation
TO-220-3
TO-220-3 (2)
Figure 1. Package Type of MBR30100C
Apr. 2009 Rev. 1.1
BCD Semiconductor Manufacturing Limited
1
and
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30100C
Pin Configuration
T Package
(TO-220-3)
(TO-220-3(2))
3
A2
2
K
1
A1
TF Package
(TO-220F-3)
Figure 2. Pin Configuration of MBR30100C (Top View)
Figure 3. Internal Structure of MBR30100C
Apr. 2009 Rev. 1.1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30100C
Ordering Information
MBR30100C
-
Circuit Type
E1: Lead Free
G1: Green
Blank: Tube
Package
T: TO-220-3/TO-220-3(2)
TF: TO-220F-3
Package
TO-220-3/
TO-220-3(2)
TO-220F-3
Part Number
Marking ID
Lead Free
Green
Lead Free
Green
MBR30100CTE1
MBR30100CTF
-E1
MBR30100CTG1
MBR30100CTF
-G1
MBR30100CTE1
MBR30100CTF
-E1
MBR30100CTG1
MBR30100CTF
G1
Packing
Type
Tube
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.
Absolute Maximum Ratings ( Per Diode Leg) (Note 1)
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 126°C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 126°C
Non repetitive Peak Surge Current
(Surge applied at rated load conditions half wave, single phase,
60Hz)
Operating Junction Temperature Range(Note 2)
VRRM
VRWM
VR
100
V
IF(AV)
15
A
IFRM
30
A
IFSM
200
A
TJ
150
°C
Storage Temperature Range
TSTG
-55 to 150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10000
> 400
> 8000
V/µs
ESD Ratings: Machine Model = C
Human Body Model =3B
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ <
1/θJA.
Apr. 2009 Rev. 1.1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30100C
Recommended Operating Conditions
Parameter
Symbol
Condition
θJC
Junction to Case
θJA
Junction to
Ambient
Value
Maximum Thermal Resistance
Unit
TO-220-3/
TO-220-3(2)
2.5
TO-220F-3
4.5
TO-220-3/
TO-220-3(2)
60
TO-220F-3
60
°C/W
Electrical Characteristics
Parameter
Maximum Instantaneous Forward
Voltage Drop (Note 3)
Maximum Instantaneous Reverse
Current (Note 3)
Symbol
VF
IR
Conditions
Value
IF=15A, TC=25°C
0.85
IF=15A, TC=125°C
0.75
IF=30 A, TC=25°C
0.95
IF=30A, TC=125°C
0.85
Rated
DC
TC=125°C
Voltage,
6.0
Rated
DC
TC=25°C
Voltage,
Units
V
mA
0.1
Note 3: Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%.
Apr. 2009 Rev. 1.1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30100C
Typical Performance Characteristics
100
10000
10
Reverse Current (µA)
TJ=150°C
TJ=125°C
1
0.1
0.01
0.1
TJ=125°C
100
10
1
TJ=25°C
0.1
TJ=25°C
0.01
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
20
Instantaneous Forward Voltage (V)
40
60
80
Reverse Voltage (V)
Figure 4. Typical Forward Voltage Per Diode
Figure 5.
Typical Reverse Current Per Diode
30
28
26
Average Forward Current (A)
Instantaneous Forward Current (A)
TJ=150°C
1000
24
22
20
18
16
14
12
10
8
6
4
2
0
100
105
110
115
120
125
130
135
140
145
150
155
Case Temperature (°C)
Figure 6. Average Forward Current vs.
Case Temperature (Square, Per Diode)
Apr. 2009 Rev. 1.1
BCD Semiconductor Manufacturing Limited
5
100
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30100C
Mechanical Dimensions
TO-220-3
9.660(0.380)
10.660(0.420)
φ3.560(0.140)
4.060(0.160)
Unit: mm(inch)
2.580(0.102)
3.380(0.133)
0.550(0.022)
1.350(0.053)
0.200(0.008)
7°
φ1.500(0.059)
3.560(0.140)
4.820(0.190)
2.080(0.082)
2.880(0.113)
3°
1.160(0.046)
1.760(0.069)
7°
0.381(0.015)
60°
0.813(0.032)
8.763(0.345)
60°
0.381(0.015)
2.540(0.100)
2.540(0.100)
Apr. 2009 Rev. 1.1
0.356(0.014)
0.406(0.016)
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30100C
Mechanical Dimensions
TO-220-3(2)
Unit: mm(inch)
9.800(0.386)
10.200(0.402)
1.700(0.067)
∅ 3.560(0.140)
3.640(0.143)
0.600(0.024)
1.300(0.051)
1.300(0.051)
3°
4.500(0.177)
2.400(0.094)
3°
3°
1.270(0.050)
0.700(0.028)
0.900(0.035)
2.540(0.100)
0.400(0.016)
0.600(0.024)
2.540(0.100)
Apr. 2009 Rev. 1.1
BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30100C
Mechanical Dimensions (Continued)
TO-220F-3
9.700(0.382)
10.300(0.406)
3.000(0.119)
3.550(0.140)
3.000(0.119)
3.400(0.134)
6.900(0.272)
7.100(0.280)
Unit: mm(inch)
2.350(0.093)
2.900(0.114)
3.370(0.133)
3.900(0.154)
14.700(0.579)
16.000(0.630)
4.300(0.169)
4.900(0.075)
2.790(0.110)
4.500(0.177)
1.000(0.039)
1.400(0.055)
1.100(0.043)
1.500(0.059)
12.500(0.492)
13.500(0.531)
0.550(0.022)
0.900(0.035)
2.540(0.100)
2.540(0.100)
Apr. 2009 Rev. 1.1
0.450(0.018)
0.600(0.024)
BCD Semiconductor Manufacturing Limited
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