Diodes SMD Type Dual Schottky Barrier Diodes MBD110DWT1 MBD330DWT1;MBD770DWT1 SOT-363 1.3 Unit: mm +0.1 -0.1 0.65 +0.15 2.3-0.15 Extremely Low Minority Carrier Lifetime +0.1 1.25-0.1 0.525 Features 0.36 Very Low Capacitance +0.05 0.1-0.02 +0.05 0.95-0.05 +0.1 0.3-0.1 +0.1 2.1-0.1 0.1max Low Reverse Leakage A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym b o l V a lu e VR 30 M B D110DW T1 R e ve rs e V o lta g e M B D330DW T1 7 M B D770DW T1 F o rw a rd P o w e r D is s ip a tio n J u n c tio n T e m p e ra tu re S to ra g e T e m p e ra tu re R a n g e TA = 25 U n it V dc 70 PF 120 TJ -5 5 to + 1 2 5 T stg -5 5 to + 1 5 0 mA www.kexin.com.cn 1 Diodes SMD Type MBD110DWT1 MBD330DWT1;MBD770DWT1 Electrical Characteristics Ta = 25 Parameter Symbol Conditions VBR(R) IR = 10 A CT VR = 0, f = 1.0 MHz 0.88 1.0 VR = 15 Volts, f = 1.0 MHz 0.9 1.5 MBD770DWT1 VR = 20 Volts, f = 1.0 MHz 0.5 1.0 MBD110DWT1 VR = 3.0 V 0.02 0.25 A MBD110DWT1 Reverse Breakdown Voltage MBD330DWT1 Diode Capacitance MBD110DWT1 MBD770DWT1 MBD330DWT1 Total Capacitance Reverse Leakage MBD330DWT1 MBD110DWT1 CT IR NF 13 200 nAdc 9 200 nAdc f = 1.0 GHz 6 0.6 0.45 IF = 10 mA 0.52 0.6 IF = 1.0 mAdc 0.47 0.5 IF = 10 mA 0.7 1.0 MBD110DWT1 MMBD330DWT1 MBD770DWT1 www.kexin.com.cn dB 0.5 Marking 2 pF VR = 25 V 0.38 H5 pF VR = 35 V IF = 10 mA T4 Unit Volts IF = 1.0 mAdc VF M4 10 30 MBD330DWT1 MBD770DWT1 Type 7.0 Max MBD110DWT1 Forward Voltage Marking Typ 70 MBD770DWT1 Noise Figure Min Vdc