MMBTA44 TRANSISTOR(NP) SOT–23 FEATURES High Collector-Emitter Voltage Complement to MMBTA94 MARKING: 3D 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current 100 mA PC Collector Power Dissipation 350 mW Thermal Resistance From Junction To Ambient 357 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 500 V Collector-emitter breakdown voltage V(BR)CEO* IC=1mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V Collector cut-off current ICBO VCB=400V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=4V, IC=0 0.1 µA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage hFE(1) * VCE=10V, IC=1mA 40 hFE(2) * VCE=10V, IC=10mA 50 hFE(3) * VCE=10V, IC=50mA 45 hFE(4) * VCE=10V, IC=100mA 40 200 VCE(sat)1* IC=1mA, IB=0.1mA 0.4 V VCE(sat)2* IC=10mA, IB=1mA 0.5 V VCE(sat)3* IC=50mA, IB=5mA 0.75 V VBE(sat)* IC=10mA, IB=1mA 0.75 V Collector output capacitance Cob VCB=20V, IE=0, f=1MHz 7 pF Emitter input capacitance Cib VEB=0.5V, IC=0, f=1MHz 130 pF *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５