SMC BAT54A Negligible switching loss Datasheet

BAT54/A/C/S
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Technical Data
Data Sheet N0123, Rev. C
Green Products
BAT54/A/C/S SCHOTTKY RECTIFIER
Applications:
• Small signal switching
Features:
•
•
•
•
•
•
•
•
•
Negligible switching losses
Very small conduction losses
Low forward voltage drop
Surface mount device
Double diodes with different pining are available
Schottky barrier diodes encapsulated in a SOT-23 small SMD packages
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In Inches / mm
SOT-23 Package
BAT54C
Common Cathode
BAT54A
Common Anode
BAT54
Single
BAT54S
Series
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BAT54/A/C/S
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Technical Data
Data Sheet N0123, Rev. C
Green Products
Marking Diagram:
KL1/KL2/KL3/KL4
BAT54
= Part Name
BAT54A
BAT54C
BAT54S
Note: If date code is before 16221, please contact with factory about marking.
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
BAT54/A/C/S
Package
Shipping
SOT-23(Pb-Free)
3000pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
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BAT54/A/C/S
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Technical Data
Data Sheet N0123, Rev. C
Green Products
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Forward Current
Peak One Cycle Non-Repetitive
Surge Current
(per leg)
Power dissipation#
Symbol
VRRM
VRWM
VR
Condition
-
Max.
Units
30
V
IF(AV)
50% duty cycle @TC =80°C,
rectangular wave form
0.2
A
IFSM
8.3 ms, half Sine pulse
0.6
A
Ptot
Tamb = 25 °C
200
mW
Max.
0.24
0.32
0.40
0.50
1.0
Units
V
2.0
μA
100
μA
10
pF
5
ns
# for double diodes, Ptot is the total dissipation of both diodes.
Electrical Characteristics:
Characteristics
Forward Voltage Drop(per leg)*
Reverse Current(per leg)**
Symbol
VF1
IR1
IR2
Junction Capacitance
(per leg)
Reverse Recovery Time
CT
trr
Condition
@ 0.1mA, Pulse, TJ = 25 °C
@ 1mA, Pulse, TJ = 25 °C
@ 10mA, Pulse, TJ = 25 °C
@ 30mA, Pulse, TJ = 25 °C
@ 100mA, Pulse, TJ = 25 °C
@VR = rated VR, Pulse,
TJ = 25 °C
@ VR = rated VR, Pulse,
TJ = 100°C
@VR = 5.0 V, Tc=25℃
fSIG = 1MHz
IF=10mA IR = 10mA
TJ = 25 °C Irr =1 mA RL=100Ω
Pulse test:
* tp=380ms, δ<2%
* * tp=5ms, δ<2%
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance
Junction to Ambient
Case Style
Symbol
TJ
Tstg
RθJA
Condition
DC operation
Specification
125
-55 to +150
Units
°C
°C
500
°C/W
SOT-23
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BAT54/A/C/S
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Technical Data
Data Sheet N0123, Rev. C
Green Products
• China - Germany - Korea - Singapore - United States •
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BAT54/A/C/S
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Technical Data
Data Sheet N0123, Rev. C
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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