BAT54/A/C/S SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0123, Rev. C Green Products BAT54/A/C/S SCHOTTKY RECTIFIER Applications: • Small signal switching Features: • • • • • • • • • Negligible switching losses Very small conduction losses Low forward voltage drop Surface mount device Double diodes with different pining are available Schottky barrier diodes encapsulated in a SOT-23 small SMD packages This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In Inches / mm SOT-23 Package BAT54C Common Cathode BAT54A Common Anode BAT54 Single BAT54S Series • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • BAT54/A/C/S SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0123, Rev. C Green Products Marking Diagram: KL1/KL2/KL3/KL4 BAT54 = Part Name BAT54A BAT54C BAT54S Note: If date code is before 16221, please contact with factory about marking. Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device BAT54/A/C/S Package Shipping SOT-23(Pb-Free) 3000pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • BAT54/A/C/S SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0123, Rev. C Green Products Maximum Ratings: Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Forward Current Peak One Cycle Non-Repetitive Surge Current (per leg) Power dissipation# Symbol VRRM VRWM VR Condition - Max. Units 30 V IF(AV) 50% duty cycle @TC =80°C, rectangular wave form 0.2 A IFSM 8.3 ms, half Sine pulse 0.6 A Ptot Tamb = 25 °C 200 mW Max. 0.24 0.32 0.40 0.50 1.0 Units V 2.0 μA 100 μA 10 pF 5 ns # for double diodes, Ptot is the total dissipation of both diodes. Electrical Characteristics: Characteristics Forward Voltage Drop(per leg)* Reverse Current(per leg)** Symbol VF1 IR1 IR2 Junction Capacitance (per leg) Reverse Recovery Time CT trr Condition @ 0.1mA, Pulse, TJ = 25 °C @ 1mA, Pulse, TJ = 25 °C @ 10mA, Pulse, TJ = 25 °C @ 30mA, Pulse, TJ = 25 °C @ 100mA, Pulse, TJ = 25 °C @VR = rated VR, Pulse, TJ = 25 °C @ VR = rated VR, Pulse, TJ = 100°C @VR = 5.0 V, Tc=25℃ fSIG = 1MHz IF=10mA IR = 10mA TJ = 25 °C Irr =1 mA RL=100Ω Pulse test: * tp=380ms, δ<2% * * tp=5ms, δ<2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Storage Temperature Typical Thermal Resistance Junction to Ambient Case Style Symbol TJ Tstg RθJA Condition DC operation Specification 125 -55 to +150 Units °C °C 500 °C/W SOT-23 • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • BAT54/A/C/S SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0123, Rev. C Green Products • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • BAT54/A/C/S SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0123, Rev. C Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. 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