INCHANGE Semiconductor isc P-Channel MOSFET Transistor IRF5210,IIRF5210 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.06Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -40 A IDM Drain Current-Single Pulsed -140 A PD Total Dissipation @TC=25℃ 200 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance isc website：www.iscsemi.cn MAX UNIT 0.75 ℃/W 62 ℃/W 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc P-Channel MOSFET Transistor IRF5210,IIRF5210 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -250μA -100 VGS(th) Gate Threshold Voltage VDS=VGS; ID= -250μA -2.0 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V -4.0 V VGS= -10V; ID= -24A 0.06 Ω Gate-Source Leakage Current VGS= ±20V ±100 nA IDSS Drain-Source Leakage Current VDS= -100V; VGS= 0V -25 μA VSD Diode forward voltage Is= -21A; VGS = 0V -1.6 V isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark