HMC406MS8G v02.1202 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for use as a driver amplifier for 5.0 - 6.0 GHz applications: Gain: 17 dB • UNII 38% PAE • HiperLAN & 802.11a WLAN Supply Voltage: +5.0 V Saturated Power: +29 dBm Power Down Capability Low External Part Count Functional Diagram General Description The HMC406MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5.0 and 6.0 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 17 dB of gain and +29 dBm of saturated power at 38% PAE from a +5.0V supply voltage. Vpd can be used for full power down or RF output power/current control. Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V Parameter Min. Frequency Range Max. Min. 5.0 - 6.0 Gain 13 Gain Variation Over Temperature Typ. Max. 5.7 - 5.9 16 21 0.03 0.04 14 Units GHz 17 21 dB 0.03 0.04 dB/ °C Input Return Loss 10 11 dB Output Return Loss 8 9 dB 27 dBm 29 dBm 38 dBm 6.0 6.0 dB 0.002 / 300 0.002 / 300 mA Output Power for 1 dB Compression (P1dB) 21 Saturated Output Power (Psat) 24 24 27 Output Third Order Intercept (IP3) 34 Noise Figure 38 34 Supply Current (Icq) Vpd = 0V/5V Control Current (Ipd) Vpd = 5V 7 7 mA tON, tOFF 35 35 ns Switching Speed 8 - 142 Typ. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC406MS8G v02.1202 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz Broadband Gain & Return Loss 20 22 15 20 0 16 S11 S22 14 GAIN (dB) 5 S21 -5 12 10 8 -10 +25 C +85 C 6 -15 4 -20 -40 C 2 -25 3 4 5 6 7 0 4.5 8 5 FREQUENCY (GHz) 5.5 6 Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 +25 C +85 C -40 C RETURN LOSS (dB) RETURN LOSS (dB) -5 -10 -15 -20 +25 C -5 -10 +85 C -25 -30 4.5 -40 C 5 5.5 6 -15 4.5 6.5 5 FREQUENCY (GHz) 5.5 6 6.5 FREQUENCY (GHz) P1dB vs. Temperature Psat vs. Temperature 34 34 32 32 30 30 28 28 Psat (dBm) P1dB (dBm) 6.5 FREQUENCY (GHz) 26 24 22 26 24 22 20 +25 C 20 +25 C 18 +85 C -40 C 18 +85 C -40 C 16 14 4.5 AMPLIFIERS - SMT 18 10 RESPONSE (dB) 8 Gain vs. Temperature 16 5 5.5 FREQUENCY (GHz) 6 6.5 14 4.5 5 5.5 6 6.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 143 MICROWAVE CORPORATION HMC406MS8G v02.1202 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz Power Compression @ 5.8 GHz Output IP3 vs. Temperature 36 30 OIP3 (dBm) Pout (dBm), GAIN (dB), PAE (%) 42 24 18 12 Pout (dBm) Gain (dB) 6 PAE (%) 0 0 2 4 6 8 10 12 14 16 18 44 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 4.5 +25 C +85 C -40 C 5 6.5 Gain & Power vs. Supply Voltage 32 23 31 8 22 30 7 21 29 20 28 19 27 18 26 17 25 GAIN dB) 24 9 6 5 4 3 +25 C +85 C 16 1 0 4.5 5 5.5 6 6.5 23 5 5.25 Vcc SUPPLY VOLTAGE (Vdc) Gain, Power & Quiescent Supply Current vs. Vpd @ 5.8 GHz Reverse Isolation vs. Temperature Reverse Isolation Power Down Isolation -20 -30 -40 -50 33 350 30 315 27 280 24 245 21 210 18 175 140 15 Gain P1dB Psat 12 9 6 105 70 35 Icq 0 3 5 5.5 FREQUENCY (GHz) 6 6.5 2.5 3 3.5 4 4.5 Vpd (Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 Icq (mA) GAIN (dB), P1dB (dBm), Psat (dBm) 0 -60 4.5 24 22 14 4.75 FREQUENCY (GHz) -10 P1dB Psat Gain 15 P1dB, Psat (dBm) 10 -40 C ISOLATION (dB) 6 FREQUENCY (GHz) Noise Figure vs. Temperature 2 8 - 144 5.5 INPUT POWER (dBm) NOISE FIGURE (dB) AMPLIFIERS - SMT 8 MICROWAVE CORPORATION HMC406MS8G v02.1202 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz Absolute Maximum Ratings +5.5 Vdc Control Voltage (Vpd) +5.5 Vdc RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) +20 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 32 mW/°C above 85 °C) 2.1 W Thermal Resistance (junction to ground paddle) 31 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85° C 8 AMPLIFIERS - SMT Collector Bias Voltage (Vcc) Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 145 MICROWAVE CORPORATION HMC406MS8G v02.1202 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz AMPLIFIERS - SMT 8 8 - 146 Pin Descriptions Pin Number Function Description 1 Vpd Power Control Pin. For maximum power, this pin should be connected to 5.0V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 2, 4, 7 GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. 3 RF IN This pin is AC coupled and matched to 50 Ohms from 5.5 to 6.0 GHz. 5, 6 RF OUT RF output and bias for the output stage. The power supply for the output device needs to be supplied to these pins. 8 Vcc Power supply voltage for the first amplifier stage. An external bypass capacitor of 330 pF is required. This capacitor should be placed as close to the devices as possible. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.1202 HMC406MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz Evaluation PCB AMPLIFIERS - SMT 8 List of Material Item Description J1 - J2 PC Mount SMA RF Connector J3 2mm DC Header C1 - C3 330 pF Capacitor, 0603 Pkg. C4 0.6 pF Capacitor, 0603 Pkg. C5 1.6 pF Capacitor, 0603 Pkg. C6 2.2 µF Capacitor, Tantalum L1 3.9 nH Inductor, 0603 Pkg. U1 HMC406MS8G Amplifier PCB* 105021 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 147 MICROWAVE CORPORATION HMC406MS8G v02.1202 GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz Application Circuit AMPLIFIERS - SMT 8 Note 1: C3 should be located < 0.020” from Pin 8 (Vcc) Note 2: C2 should be located < 0.020” from L1. 8 - 148 TL1 TL2 TL3 Impedance 50 Ohm 50 Ohm 50 Ohm Length 0.038” 0.231” 0.1” For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v02.1202 HMC406MS8G GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz Notes: AMPLIFIERS - SMT 8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 149