ON NDD03N60ZT4G N-channel power mosfet Datasheet

NDF03N60Z, NDD03N60Z
N-Channel Power MOSFET
600 V, 3.6 W
Features
•
•
•
•
•
Low ON Resistance
Low Gate Charge
ESD Diode−Protected Gate
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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VDSS
RDS(on) (MAX) @ 1.2 A
600 V
3.6 W
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Drain−to−Source Voltage
NDF
VDSS
NDD
600
D (2)
V
Continuous Drain Current RqJC
ID
3.1
(Note 1)
2.6
A
Continuous Drain Current RqJC
TA = 100°C
ID
2.9
(Note 1)
1.65
A
Pulsed Drain Current, VGS @ 10 V
IDM
12
10
A
Power Dissipation RqJC
PD
27
61
W
Gate−to−Source Voltage
VGS
±30
V
Single Pulse Avalanche Energy,
ID = 3.0 A
EAS
100
mJ
ESD (HBM) (JESD 22−A114)
Vesd
3000
V
RMS Isolation Voltage (t = 0.3 sec.,
R.H. ≤ 30%, TA = 25°C) (Figure 17)
VISO
Peak Diode Recovery (Note 2)
dv/dt
4.5
V/ns
Continuous Source Current (Body
Diode)
IS
3.0
A
Maximum Temperature for Soldering
Leads
TL
260
°C
TJ, Tstg
−55 to 150
°C
Operating Junction and
Storage Temperature Range
N−Channel
Unit
4500
G (1)
S (3)
V
1
2
3
NDF03N60ZG,
NDF03N60ZH
TO−220FP
CASE 221AH
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. ISD = 3.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
4
4
1
1 2
2
3
3
NDD03N60Z−1G
IPAK
CASE 369D
NDD03N60ZT4G
DPAK
CASE 369AA
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 8
1
Publication Order Number:
NDF03N60Z/D
NDF03N60Z, NDD03N60Z
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
NDF03N60Z
NDD03N60Z
RqJC
4.7
2.0
°C/W
(Note 3) NDF03N60Z
(Note 4) NDD03N60Z
(Note 3) NDD03N60Z−1
RqJA
51
40
80
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Test Conditions
Symbol
Min
Drain−to−Source Breakdown Voltage
VGS = 0 V, ID = 1 mA
BVDSS
600
Breakdown Voltage Temperature Coefficient
Reference to 25°C,
ID = 1 mA
DBVDSS/
DTJ
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Leakage Current
25°C
VDS = 600 V, VGS = 0 V
Gate−to−Source Forward Leakage
V
0.6
IDSS
V/°C
1
150°C
mA
50
VGS = ±20 V
IGSS
Static Drain−to−Source
On−Resistance
VGS = 10 V, ID = 1.2 A
RDS(on)
Gate Threshold Voltage
VDS = VGS, ID = 50 mA
VGS(th)
Forward Transconductance
VDS = 15 V, ID = 1.5 A
gFS
±10
mA
3.3
3.6
W
3.9
4.5
V
ON CHARACTERISTICS (Note 5)
3.0
2.0
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 6)
Output Capacitance (Note 6)
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Reverse Transfer Capacitance
(Note 6)
Total Gate Charge (Note 6)
Gate−to−Source Charge (Note 6)
VDD = 300 V, ID = 3.0 A,
VGS = 10 V
Gate−to−Drain (“Miller”) Charge
(Note 6)
Ciss
248
312
372
Coss
30
39
50
Crss
4
8
12
Qg
6
12
18
Qgs
1.5
2.5
4
Qgd
3
6.1
9
pF
nC
Plateau Voltage
VGP
6.4
V
Gate Resistance
Rg
6.0
W
td(on)
9
ns
tr
8
td(off)
16
tf
10
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = 300 V, ID = 3.0 A,
VGS = 10 V, RG = 5 W
Fall Time
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
IS = 3.0 A, VGS = 0 V
VSD
Reverse Recovery Time
VGS = 0 V, VDD = 30 V
IS = 3.0 A, di/dt = 100 A/ms
trr
265
ns
Qrr
0.9
mC
Reverse Recovery Charge
1.6
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
6. Guaranteed by design.
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2
NDF03N60Z, NDD03N60Z
TYPICAL CHARACTERISTICS
4.0
4.0
7.0 V
3.0
VDS = 25 V
3.5
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
3.5
6.5 V
VGS = 10 V
2.5
6.0 V
2.0
1.5
1.0
5.5 V
3.0
2.5
2.0
1.5
TJ = 25°C
TJ = 150°C
1.0
TJ = −55°C
0.5
0.5
5.0 V
0.0
0.0
5.0
10.0
15.0
20.0
25.0
0.0
3
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
4.50
4.25
4.00
3.75
3.50
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
7
8
9
5.00
4.75
4.50
4.25
4.00
3.75
3.50
3.25
3.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
ID, DRAIN CURRENT (A)
Figure 3. On−Region versus Gate−to−Source
Voltage
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
2.50
2.25
2.00
ID = 1.2 A
VGS = 10 V
1.75
1.50
1.25
1.00
0.75
0.50
0.25
−50
−25
0
25
50
75
100
125
10
VGS = 10 V
TJ = 25°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
150
BVDSS, NORMALIZED BREAKDOWN VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
ID = 1.2 A
TJ = 25°C
6.0
6
Figure 2. Transfer Characteristics
5.00
3.25
5.5
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
4.75
4
1.15
ID = 1 mA
1.10
1.05
1.00
0.95
0.90
−50
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. BVDSS Variation with Temperature
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3
3.5
150
NDF03N60Z, NDD03N60Z
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
IDSS, LEAKAGE (mA)
10
TJ = 150°C
1.0
TJ = 125°C
50 100 150 200 250 300 350 400 450 500 550 600
TJ = 25°C
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
0
5
10
15
20
25
30
35
40
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
versus Voltage
Figure 8. Capacitance Variation
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
350
QT
300
250
VDS
VGS
200
QGD
QGS
150
VDS = 300 V
ID = 3 A
TJ = 25°C
1
2
3
4
5
6
7
8
9 10
Qg, TOTAL GATE CHARGE (nC)
11
100
50
0
12
45
50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.10
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
10.0
IS, SOURCE CURRENT (A)
t, TIME (ns)
VDD = 300 V
ID = 3 A
VGS = 10 V
100
td(off)
tr
tf
td(on)
10.0
1.0
1
10
RG, GATE RESISTANCE (W)
TJ = 150°C
1.0
125°C
25°C
−55°C
0.1
0.3
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
Figure 11. Diode Forward Voltage versus
Current
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4
1.2
NDF03N60Z, NDD03N60Z
TYPICAL CHARACTERISTICS
100
VGS v 30 V
SINGLE PULSE
TC = 25°C
10
100 ms
1 ms
10 ms
1
dc
0.1
0.01
10 ms
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
VGS v 30 V
SINGLE PULSE
TC = 25°C
10
100 ms
1 ms
10 ms
1
dc
0.1
0.01
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDD03N60Z
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
Figure 13. Maximum Rated Forward Biased
Safe Operating Area NDF03N60Z
10
R(t) (C/W)
1
50% (DUTY CYCLE)
20%
10%
5.0%
0.1
2.0%
1.0%
RqJA = 2°C/W
Steady State
SINGLE PULSE
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
PULSE TIME (s)
1E+00
1E+01
1E+02
1E+03
Figure 14. Thermal Impedance (Junction−to−Case) for NDD03N60Z
R(t) (C/W)
100
10 50% (DUTY CYCLE)
20%
10%
5.0%
1
2.0%
1.0%
0.1
0.01
1E−06
RqJA = 40°C/W
Steady State
SINGLE PULSE
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
PULSE TIME (s)
Figure 15. Thermal Impedance (Junction−to−Ambient) for NDD03N60Z
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5
1E+02
1E+03
NDF03N60Z, NDD03N60Z
10
50% (DUTY CYCLE)
1
20%
R(t) (C/W)
10%
5.0%
2.0%
0.1
1.0%
RqJA = 4.7°C/W
Steady State
SINGLE PULSE
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
PULSE TIME (s)
1E+00
1E+01
Figure 16. Thermal Impedance (Junction−to−Case) for NDF03N60Z
LEADS
HEATSINK
0.110″ MIN
Figure 17. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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6
1E+02
1E+03
NDF03N60Z, NDD03N60Z
ORDERING INFORMATION
Package
Shipping†
NDF03N60ZG
TO−220FP
(Pb−Free, Halogen−Free)
50 Units / Rail
NDF03N60ZH
TO−220FP
(Pb−Free, Halogen−Free)
50 Units / Rail
NDD03N60Z−1G
IPAK
(Pb−Free, Halogen−Free)
75 Units / Rail
NDD03N60ZT4G
DPAK
(Pb−Free, Halogen−Free)
2500 / Tape & Reel
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAMS
Gate
Source
1 2 3
Gate Drain Source
4
Drain
YWW
3N
60ZG
NDF03N60ZG
or
NDF03N60ZH
AYWW
YWW
3N
60ZG
4
Drain
2
1 Drain 3
Gate Source
IPAK
Drain
TO−220FP
A
Y
WW
G, H
= Location Code
= Year
= Work Week
= Pb−Free, Halogen−Free Package
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DPAK
NDF03N60Z, NDD03N60Z
PACKAGE DIMENSIONS
TO−220 FULLPACK, 3−LEAD
CASE 221AH
ISSUE F
A
E
B
P
E/2
0.14
Q
D
M
B A
A
H1
M
A1
C
NOTE 3
1 2 3
L
L1
3X
3X
SEATING
PLANE
b2
c
b
0.25
M
B A
M
C
A2
e
SIDE VIEW
FRONT VIEW
SECTION D−D
A
NOTE 6
NOTE 6
H1
D
D
A
SECTION A−A
ALTERNATE CONSTRUCTION
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8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE
PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE
MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.
6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY
MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1
AND H1 FOR MANUFACTURING PURPOSES.
DIM
A
A1
A2
b
b2
c
D
E
e
H1
L
L1
P
Q
MILLIMETERS
MIN
MAX
4.30
4.70
2.50
2.90
2.50
2.90
0.54
0.84
1.10
1.40
0.49
0.79
14.70
15.30
9.70
10.30
2.54 BSC
6.60
7.10
12.50
14.73
--2.80
3.00
3.40
2.80
3.20
NDF03N60Z, NDD03N60Z
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
T
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9
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
NDF03N60Z, NDD03N60Z
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA
ISSUE B
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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NDF03N60Z/D