CJL8810 SOT-23-6L Plastic-Encapsulate MOSFETS SOT-23-6L CJL8810 Dual N-Channel MOSFET DESCRIPTION The CJL8810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. MARKING: MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V ID 7 A Pulsed Drain Current IDM * 30 A Thermal Resistance from Junction to Ambient RθJA 83.3 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 ℃ Continuous Drain Current *Repetitive rating：Pluse width limited by junction temperature. [email protected] www.zpsemi.com 1 of 3 CJL8810 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±4.5V, VDS = 0V ±1 µA VGS =±8V, VDS = 0V ±10 µA 1 V VGS =10V, ID =7A 20 mΩ VGS =4.5V, ID =6.6A 22 mΩ VGS =3.8V, ID =6A 24 mΩ VGS =2.5V, ID =5.5A 26 mΩ VGS =1.8V, ID =5A 35 mΩ Gate threshold voltage (note 1) Drain-source on-resistance (note 1) VGS(th) RDS(on) VDS =VGS, ID =250µA Forward tranconductance (note 1) gFS VDS =5V, ID =7A Diode forward voltage(note 1) VSD IS=1A, VGS = 0V 20 V 0.4 9 S 1 V DYNAMIC PARAMETERS (note 2) 1150 pF 185 pF Crss 145 pF Total gate charge Qg 15 nC Gate-source charge Qgs 0.8 nC Gate-drain charge Qgd 3.2 nC td(on) 6 ns VGS=5V,VDD=10V, 13 ns RL=1.35Ω,RGEN=3Ω 52 ns 16 ns Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance VDS =10V,VGS =0V,f =1MHz VDS =10V,VGS =4.5V,ID =7A SWITCHING PARAMETERS(note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf Notes : 1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%. 2. Guaranteed by design, not subject to production testing. [email protected] www.zpsemi.com 2 of 3 CJL8810 Transfer Characteristics Output Characteristics 20 22 2.2V Pulsed VDS=5V 20 Pulsed DRAIN CURRENT DRAIN CURRENT 1.8V 12 8 15 ID (A) 16 ID (A) 2.0V 1.5V 10 Ta=100℃ 5 Ta=25℃ 4 VGS=1.2V 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— 80 5 VDS 0 6 0 1 (V) 2 3 GATE TO SOURCE VOLTAGE ID RDS(ON) 80 —— VGS (V) VGS Ta=25℃ Ta=25℃ Pulsed (mΩ) 40 ON-RESISTANCE ON-RESISTANCE 60 RDS(ON) 60 RDS(ON) (mΩ) Pulsed VGS=2V VGS=10V 20 40 ID=3A 20 0 0 0 4 8 12 DRAIN CURRENT ID 16 0 20 2 4 6 GATE TO SOURCE VOLTAGE (A) 10 (V) IS —— VSD Threshold Voltage 10 0.80 8 VGS Ta=25℃ IS (A) 0.75 SOURCE CURRENT THRESHOLD VOLTAGE VTH (V) Pulsed 0.70 ID=250uA 0.65 1 0.1 0.60 0.55 25 50 75 AMBIENT TEMPERATURE [email protected] 100 Ta 125 0.01 0.4 (℃ ) 0.6 0.8 SOURCE TO DRAIN VOLTAGE www.zpsemi.com 1.0 1.2 VSD (V) 3 of 3